Oxidation, selective

Industry

CPC
Y10S148/117

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/117Oxidation, selective

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for creating a stepped structure on a substrate
- Patent number 6,946,339
- Issue date Sep 20, 2005
- Infineon Technologies AG
- Christian Herzum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making spin valve read head with plasma produced metal ox...
- Patent number 6,162,305
- Issue date Dec 19, 2000
- International Business Machines Corporation
- Richard Hsiao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for poly-buffered locos without pitting formation
- Patent number 6,096,613
- Issue date Aug 1, 2000
- Acer Semiconductor Manufacturing Inc.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating integrated circuits with oxidized isolation
- Patent number 6,093,620
- Issue date Jul 25, 2000
- National Semiconductor Corporation
- Douglas L. Peltzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin valve read head with plasma produced metal oxide insulation la...
- Patent number 5,999,379
- Issue date Dec 7, 1999
- International Business Machines Corporation
- Richard Hsiao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Damascene isolation of CMOS transistors
- Patent number 5,981,326
- Issue date Nov 9, 1999
- Frank M. Wanlass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packing density for flash memories
- Patent number 5,892,257
- Issue date Apr 6, 1999
- International Business Machines Corporation
- Joyce Elizabeth Acocella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a high voltage gate dielectric for use in integr...
- Patent number 5,861,347
- Issue date Jan 19, 1999
- Motorola Inc.
- Bikas Maiti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having tapered gate electrode
- Patent number 5,834,816
- Issue date Nov 10, 1998
- Goldstar Electron Co., Ltd.
- Seong Jin Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,654,237
- Issue date Aug 5, 1997
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packing density for flash memories by using a pad oxide
- Patent number 5,643,813
- Issue date Jul 1, 1997
- International Business Machines Corporation
- Joyce Elizabeth Acocella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packing density for flash memories
- Patent number 5,622,881
- Issue date Apr 22, 1997
- International Business Machines Corporation
- Joyce E. Acocella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,470,791
- Issue date Nov 28, 1995
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of semiconductor elements
- Patent number 5,427,971
- Issue date Jun 27, 1995
- Goldstar Electron Co., Ltd.
- Chang J. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a TFT panel
- Patent number 5,422,293
- Issue date Jun 6, 1995
- Casio Computer Co., Ltd.
- Naohiro Konya
- G02 - OPTICS
Information Patent Grant
Semiconductor device producing method requiring only two masks for...
- Patent number 5,362,670
- Issue date Nov 8, 1994
- Sharp Kabushiki Kaisha
- Katsuji Iguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation method for semiconductor device
- Patent number 5,358,893
- Issue date Oct 25, 1994
- SamSung Electronics Co., Ltd.
- Won-suk Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming thin tunneling windows in EEPROMs
- Patent number 5,352,618
- Issue date Oct 4, 1994
- Atmel Corporation
- Bradley J. Larsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having an isolated layer r...
- Patent number 5,352,626
- Issue date Oct 4, 1994
- Seiko Instruments Inc.
- Takashi Hosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective salicidation of source/drain regions of a tran...
- Patent number 5,342,798
- Issue date Aug 30, 1994
- VLSI Technology, Inc.
- Tiao-Yuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolated regions of oxide
- Patent number 5,338,968
- Issue date Aug 16, 1994
- SGS-Thomson
- Robert Hodges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor devices
- Patent number 5,336,638
- Issue date Aug 9, 1994
- Hitachi, Ltd.
- Masayuki Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a thin film transistor
- Patent number 5,326,712
- Issue date Jul 5, 1994
- Samsung Electronics Co., Ltd.
- Byung-seong Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multilayered metallization structure in w...
- Patent number 5,304,510
- Issue date Apr 19, 1994
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a MOSFET
- Patent number 5,298,443
- Issue date Mar 29, 1994
- Goldstar Electron Co., Ltd.
- Seong J. Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an isolation layer region on the side w...
- Patent number 5,293,061
- Issue date Mar 8, 1994
- Seiko Instruments Inc.
- Takashi Hosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned contacts using the local oxidation o...
- Patent number 5,266,523
- Issue date Nov 30, 1993
- Micron Technology, Inc.
- Monte Manning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device by forming first and s...
- Patent number 5,254,489
- Issue date Oct 19, 1993
- NEC Corporation
- Hidetoshi Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having field oxide r...
- Patent number 5,254,494
- Issue date Oct 19, 1993
- U.S. Philips Corp.
- Paulus A. Van Der Plas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective oxidation of silicon trench sidewall
- Patent number 5,240,875
- Issue date Aug 31, 1993
- North American Philips Corporation
- Len-Yuan Tsou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for creating a stepped structure on a substrate
- Publication number 20040185646
- Publication date Sep 23, 2004
- Infineon Technologies AG
- Christian Herzum
- H01 - BASIC ELECTRIC ELEMENTS

Oxidation, selective

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for creating a stepped structure on a substrate

Method of making spin valve read head with plasma produced metal ox...

Method for poly-buffered locos without pitting formation

Method of fabricating integrated circuits with oxidized isolation

Spin valve read head with plasma produced metal oxide insulation la...

Damascene isolation of CMOS transistors

Packing density for flash memories

Method for forming a high voltage gate dielectric for use in integr...

MOSFET having tapered gate electrode

Method of manufacturing semiconductor device

Packing density for flash memories by using a pad oxide

Packing density for flash memories

Method of manufacturing semiconductor device

Method for fabrication of semiconductor elements

Method for manufacturing a TFT panel

Semiconductor device producing method requiring only two masks for...

Isolation method for semiconductor device

Method for forming thin tunneling windows in EEPROMs

Method for making a semiconductor device having an isolated layer r...

Method for selective salicidation of source/drain regions of a tran...

Method of forming isolated regions of oxide

Process for manufacturing semiconductor devices

Method for manufacturing a thin film transistor

Method of manufacturing a multilayered metallization structure in w...

Process for forming a MOSFET

Semiconductor device having an isolation layer region on the side w...

Method of forming self-aligned contacts using the local oxidation o...

Method of manufacturing semiconductor device by forming first and s...

Method of manufacturing a semiconductor device having field oxide r...

Selective oxidation of silicon trench sidewall

Patents Applicationslast 30 patents

Method for creating a stepped structure on a substrate