P-type

Industry

CPC
H01L21/02579

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02579P-type

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Remote capacitively coupled plasma deposition of amorphous silicon
- Patent number 12,365,986
- Issue date Jul 22, 2025
- Applied Materials, Inc.
- Zubin Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial growth methods and structures thereof
- Patent number 12,369,374
- Issue date Jul 22, 2025
- Taiwan Semicoductor Manufacturing Co., Ltd.
- Tetsuji Ueno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,369,342
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing a Group IV semiconductor and related semicond...
- Patent number 12,363,960
- Issue date Jul 15, 2025
- ASM IP Holding B.V.
- Joe Margetis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Near-infrared light emitting semiconductor element and method for m...
- Patent number 12,364,058
- Issue date Jul 15, 2025
- The Ritsumeikan Trust
- Shuhei Ichikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 12,354,899
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Taeyong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 12,336,210
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor deposition device and method of producing epitaxial wafer
- Patent number 12,327,724
- Issue date Jun 10, 2025
- Epicrew Corporation
- Akira Okabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with doped semiconductor layers and methods and systems...
- Patent number 12,266,695
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,266,697
- Issue date Apr 1, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic complementary field-effect transistors having carbon-dop...
- Patent number 12,262,559
- Issue date Mar 25, 2025
- Applied Materials, Inc.
- Andrew Anthony Cockburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory structure with air gaps and method for preparing th...
- Patent number 12,245,431
- Issue date Mar 4, 2025
- NANYA TECHNOLOGY CORPORATION
- Yuan-Yuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a fin field effect transistor (FinFET) comprising epit...
- Patent number 12,237,403
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip manufacturing method
- Patent number 12,211,754
- Issue date Jan 28, 2025
- STMicroelectronics S.r.l.
- Pierpaolo Monge Roffarello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate in memory macro edge and middle strap
- Patent number 12,142,684
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride-based semiconductor light-emitting element and manufacturin...
- Patent number 12,119,618
- Issue date Oct 15, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Shuichi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method with enhanced gate contact and threshold...
- Patent number 12,119,403
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Max Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-inducing silicon liner in semiconductor devices
- Patent number 12,113,118
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnesium Group IV Oxides
- Publication number 20250212474
- Publication date Jun 26, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPLEMENTARY FIELD-EFFECT TRANSISTORS HAVING CARBON-DOP...
- Publication number 20250194243
- Publication date Jun 12, 2025
- Applied Materials, Inc.
- Andrew Anthony Cockburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...
- Publication number 20250174457
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lutz Muehlenbein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS...
- Publication number 20250176236
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...
- Publication number 20250163606
- Publication date May 22, 2025
- Mach Corporation Co., Ltd.
- Goubun AKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...
- Publication number 20250151363
- Publication date May 8, 2025
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP MANUFACTURING METHOD
- Publication number 20250126877
- Publication date Apr 17, 2025
- STMicroelectronics S.r.l
- Pierpaolo MONGE ROFFARELLO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250098234
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Shunsuke KAMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...
- Publication number 20250079167
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A PLANAR SEMICONDUCTOR SURFACE
- Publication number 20240429041
- Publication date Dec 26, 2024
- The Boeing Company
- Shanying Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...
- Publication number 20240404825
- Publication date Dec 5, 2024
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP
- Publication number 20240379851
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...
- Publication number 20240357821
- Publication date Oct 24, 2024
- NANYA TECHNOLOGY CORPORATION
- YUAN-YUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20240258099
- Publication date Aug 1, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Remote capacitively coupled plasma deposition of amorphous silicon

Epitaxial growth methods and structures thereof

Increasing source/drain dopant concentration to reduced resistance

Method for depositing a Group IV semiconductor and related semicond...

Near-infrared light emitting semiconductor element and method for m...

Semiconductor devices and methods of manufacturing the same

Epitaxial wafer, semiconductor device, and method for manufacturing...

Source/drain structure for semiconductor device

Vapor deposition device and method of producing epitaxial wafer

Semiconductor device and manufacturing method thereof

Method for depositing boron containing silicon germanium layers

Structures with doped semiconductor layers and methods and systems...

Ultrawide bandgap semiconductor devices including magnesium germani...

Monolithic complementary field-effect transistors having carbon-dop...

Integrated circuit device

Vertical memory structure with air gaps and method for preparing th...

Structure of a fin field effect transistor (FinFET) comprising epit...

Contact architecture for capacitance reduction and satisfactory con...

Semiconductor chip manufacturing method

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Method of manufacturing gate structure and method of manufacturing...

Ultrawide bandgap semiconductor devices including magnesium germani...

Devices having a semiconductor material that is semimetal in bulk a...

Cut metal gate in memory macro edge and middle strap

Semiconductor devices

Method of manufacturing nitride semiconductor light-emitting element

Nitride-based semiconductor light-emitting element and manufacturin...

Gate structure and method with enhanced gate contact and threshold...

Stress-inducing silicon liner in semiconductor devices

Nitride semiconductor structure, nitride semiconductor device, and...

Patents Applicationslast 30 patents

Magnesium Group IV Oxides

MONOLITHIC COMPLEMENTARY FIELD-EFFECT TRANSISTORS HAVING CARBON-DOP...

METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...

STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS...

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...

SEMICONDUCTOR CHIP MANUFACTURING METHOD

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

SEMICONDUCTOR DEVICE

METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

FORMING A PLANAR SEMICONDUCTOR SURFACE

METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...

Source/Drain Feature to Contact Interfaces

METHOD FOR MANUFACTURING SIC SUBSTRATE

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION