P-type

Industry

CPC
H01L21/02579

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02579P-type

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate in memory macro edge and middle strap
- Patent number 12,142,684
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride-based semiconductor light-emitting element and manufacturin...
- Patent number 12,119,618
- Issue date Oct 15, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Shuichi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method with enhanced gate contact and threshold...
- Patent number 12,119,403
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Max Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-inducing silicon liner in semiconductor devices
- Patent number 12,113,118
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,100,735
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Namkyu Edward Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride semiconductor film
- Patent number 12,094,710
- Issue date Sep 17, 2024
- Tokyo Electron Limited
- Nobuaki Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,062,710
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with conformal source/drain layer
- Patent number 12,057,495
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yao-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature to contact interfaces
- Patent number 12,051,730
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,048,133
- Issue date Jul 23, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain epitaxial stacks
- Patent number 12,021,142
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming structures including silicon germanium and silic...
- Patent number 11,996,289
- Issue date May 28, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, high electron mobility transistor and fabr...
- Patent number 11,967,642
- Issue date Apr 23, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,955,334
- Issue date Apr 9, 2024
- Azur Space Solar Power GmbH
- Gregor Keller
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self-aligned backside source contact structure
- Patent number 11,948,987
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective methods for fabricating devices and structures
- Patent number 11,948,796
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yi-Chiau Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit device
- Patent number 11,948,942
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,935,951
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer for an electronic component and method for the produc...
- Patent number 11,915,922
- Issue date Feb 27, 2024
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with non-gated well tap cell
- Patent number 11,908,896
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor isolation structures
- Patent number 11,901,415
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for depositing silicon onto substrates
- Patent number 11,901,179
- Issue date Feb 13, 2024
- ASM IP Holding B.V.
- John Tolle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...
- Publication number 20240404825
- Publication date Dec 5, 2024
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP
- Publication number 20240379851
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...
- Publication number 20240357821
- Publication date Oct 24, 2024
- NANYA TECHNOLOGY CORPORATION
- YUAN-YUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20240258099
- Publication date Aug 1, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE
- Publication number 20240243178
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER
- Publication number 20240222116
- Publication date Jul 4, 2024
- ASM IP HOLDING B.V.
- Gregory Deye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
- Publication number 20240222467
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Jieun YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING MULTILAYER STRUCTURES ON A SUBSTRATE AND RELATE...
- Publication number 20240203734
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Maritza Mujica
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING AN EPITAXIAL LAYER
- Publication number 20240203730
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...
- Publication number 20240162341
- Publication date May 16, 2024
- Raytheon Company
- Maher Bishara Tahhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240153954
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Minhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTING OXIDE CHANNEL FOR 3D NAND AND METHOD OF MAKING
- Publication number 20240153767
- Publication date May 9, 2024
- ASM IP HOLDING B.V.
- Bart Vermeulen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES
- Publication number 20240145546
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ORBITALS YIELD HIGH-MOBILITY, BACK-END-OF-LINE COMPATIBL...
- Publication number 20240136178
- Publication date Apr 25, 2024
- Cornell University
- Darrell G. Schlom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...
- Publication number 20240096619
- Publication date Mar 21, 2024
- ASM IP HOLDING, B.V.
- Brendan Timothy Padraig Marozas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...
- Publication number 20240096970
- Publication date Mar 21, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...
- Publication number 20240087888
- Publication date Mar 14, 2024
- ASM IP HOLDING, B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...
- Publication number 20240088266
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing gate structure and method of manufacturing...

Ultrawide bandgap semiconductor devices including magnesium germani...

Devices having a semiconductor material that is semimetal in bulk a...

Cut metal gate in memory macro edge and middle strap

Semiconductor devices

Method of manufacturing nitride semiconductor light-emitting element

Nitride-based semiconductor light-emitting element and manufacturin...

Gate structure and method with enhanced gate contact and threshold...

Stress-inducing silicon liner in semiconductor devices

Nitride semiconductor structure, nitride semiconductor device, and...

Semiconductor devices

Method of forming nitride semiconductor film

Increasing source/drain dopant concentration to reduced resistance

Semiconductor device with conformal source/drain layer

Source/drain feature to contact interfaces

Semiconductor structure

Method of forming source/drain epitaxial stacks

Methods of forming structures including silicon germanium and silic...

Source or drain structures for germanium N-channel devices

Semiconductor structure, high electron mobility transistor and fabr...

Vapor phase epitaxy method

Self-aligned backside source contact structure

Selective methods for fabricating devices and structures

Integrated circuit device

Nanosheet field effect transistor with a source drain epitaxy repla...

Metal-insensitive epitaxy formation

Silicon wafer for an electronic component and method for the produc...

Integrated circuit structure with non-gated well tap cell

Transistor isolation structures

Method and device for depositing silicon onto substrates

Patents Applicationslast 30 patents

METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP

VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

Source/Drain Feature to Contact Interfaces

METHOD FOR MANUFACTURING SIC SUBSTRATE

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE

METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER

METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

METHODS FOR FORMING MULTILAYER STRUCTURES ON A SUBSTRATE AND RELATE...

METHOD OF FORMING AN EPITAXIAL LAYER

DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTING OXIDE CHANNEL FOR 3D NAND AND METHOD OF MAKING

TRANSISTOR ISOLATION STRUCTURES

CORRELATED ORBITALS YIELD HIGH-MOBILITY, BACK-END-OF-LINE COMPATIBL...

METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...

EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...