Patterning of the switching material

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H01L45/1666

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1666Patterning of the switching material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
RRAM device structure and manufacturing method
- Patent number 11,653,581
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,527,714
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,502,128
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device and manufacturing method thereof
- Patent number 11,502,131
- Issue date Nov 15, 2022
- Winbond Electronics Corp.
- Chia-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic compatible RRAM structure and process
- Patent number 11,387,411
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells having increased structural stability
- Patent number 11,367,833
- Issue date Jun 21, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching layer scheme to enhance RRAM performance
- Patent number 11,362,271
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell, method of forming the same, and semiconductor device h...
- Patent number 11,342,501
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices formed using selective barrier metal r...
- Patent number 11,276,732
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including a data storage material pattern
- Patent number 11,217,748
- Issue date Jan 4, 2022
- Samsung Electronics Co., Ltd.
- Youngtak Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,183,635
- Issue date Nov 23, 2021
- SK Hynix Inc.
- Joo Young Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 11,145,690
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive interconnects suitable for utilization in integrated ass...
- Patent number 11,127,899
- Issue date Sep 21, 2021
- Micron Technology, Inc.
- Jordan D. Greenlee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods of forming an array of memory cells
- Patent number 11,121,177
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures incorporating and methods of forming metal lines includi...
- Patent number 11,094,879
- Issue date Aug 17, 2021
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,043,634
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,038,105
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory cell having a compact structure
- Patent number 11,031,550
- Issue date Jun 8, 2021
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having plural dummy memory cells
- Patent number 10,964,751
- Issue date Mar 30, 2021
- Samsung Electronics Co., Ltd.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable memory structure and method of forming the same
- Patent number 10,957,852
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two transistor, one resistor non-volatile gain cell memory and stor...
- Patent number 10,950,301
- Issue date Mar 16, 2021
- Intel Corporation
- Rafael Rios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric bipolar switching in memristors for artificial intelligen...
- Patent number 10,930,343
- Issue date Feb 23, 2021
- Hewlett Packard Enterprise Development LP
- Amit S. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device and method of manufacturing the resistive m...
- Patent number 10,903,419
- Issue date Jan 26, 2021
- SK hynix Inc.
- Hyuck Sang Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective phase change material growth in high aspect ratio dielect...
- Patent number 10,886,464
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure including gate controlled three-terminal metal oxi...
- Patent number 10,886,333
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G11 - INFORMATION STORAGE
Information Patent Grant
Top electrode for device structures in interconnect
- Patent number 10,862,029
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching layer scheme to enhance RRAM performance
- Patent number 10,811,600
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,797,239
- Issue date Oct 6, 2020
- SK Hynix Inc.
- Joo Young Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching element, variable resistance memory device, and method of...
- Patent number 10,777,745
- Issue date Sep 15, 2020
- Samsung Electronics Co., Ltd.
- Seung-Geun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic compatible RRAM structure and process
- Patent number 10,749,108
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240107902
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
- Publication number 20230422644
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230133638
- Publication date May 4, 2023
- SK HYNIX INC.
- Tae Jung HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230135098
- Publication date May 4, 2023
- United Microelectronics Corp.
- Yi Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230131200
- Publication date Apr 27, 2023
- SK HYNIX INC.
- Tae Jung HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY FOR ANALOG COMPUTING
- Publication number 20230089791
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230090628
- Publication date Mar 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Chieh MO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230038604
- Publication date Feb 9, 2023
- WINBOND ELECTRONICS CORP.
- Chia-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME
- Publication number 20230045290
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING LAYER SCHEME TO ENHANCE RRAM PERFORMANCE
- Publication number 20220302381
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20220285611
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Feng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...
- Publication number 20220271092
- Publication date Aug 25, 2022
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY
- Publication number 20220263019
- Publication date Aug 18, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE H...
- Publication number 20220255000
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY RERAM INTEGRATION WITH INTERCONNECT
- Publication number 20220181389
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND ME...
- Publication number 20220140238
- Publication date May 5, 2022
- SK hynix Inc.
- Jae Hyun HAN
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM DEVICE STRUCTURE AND MANUFACTURING METHOD
- Publication number 20220052258
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210399052
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Conductive Interconnects Suitable for Utilization in Integrated Ass...
- Publication number 20210384422
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- Jordan D. Greenlee
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays And Methods Of Forming An Array Of Memory Cells
- Publication number 20210375992
- Publication date Dec 2, 2021
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE H...
- Publication number 20210328141
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20210296584
- Publication date Sep 23, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Chieh MO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20210280779
- Publication date Sep 9, 2021
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES
- Publication number 20210265566
- Publication date Aug 26, 2021
- International Business Machines Corporation
- DEXIN KONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD OF T...
- Publication number 20210202580
- Publication date Jul 1, 2021
- KIOXIA Corporation
- Kotaro NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210159275
- Publication date May 27, 2021
- WINBOND ELECTRONICS CORP.
- Chia-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210098532
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jau-Yi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...
- Publication number 20210091141
- Publication date Mar 25, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL MANUFACTURING METHOD
- Publication number 20210057489
- Publication date Feb 25, 2021
- Jiangsu Advanced Memory Technology Co., Ltd.
- Yu-Cheng LIAO
- H01 - BASIC ELECTRIC ELEMENTS

Patterning of the switching material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

RRAM device structure and manufacturing method

Resistive random access memory device

Memory device and method of forming the same

Resistive random access memory device and manufacturing method thereof

Logic compatible RRAM structure and process

Memory cells having increased structural stability

Switching layer scheme to enhance RRAM performance

Memory cell, method of forming the same, and semiconductor device h...

Semiconductor memory devices formed using selective barrier metal r...

Semiconductor device including a data storage material pattern

Method for manufacturing semiconductor device

Memory device and manufacturing method thereof

Conductive interconnects suitable for utilization in integrated ass...

Memory arrays and methods of forming an array of memory cells

Structures incorporating and methods of forming metal lines includi...

Confining filament at pillar center for memory devices

Resistive random access memory device

Phase-change memory cell having a compact structure

Semiconductor device having plural dummy memory cells

Resistance variable memory structure and method of forming the same

Two transistor, one resistor non-volatile gain cell memory and stor...

Symmetric bipolar switching in memristors for artificial intelligen...

Resistive memory device and method of manufacturing the resistive m...

Selective phase change material growth in high aspect ratio dielect...

Memory structure including gate controlled three-terminal metal oxi...

Top electrode for device structures in interconnect

Switching layer scheme to enhance RRAM performance

Method for manufacturing semiconductor device

Switching element, variable resistance memory device, and method of...

Logic compatible RRAM structure and process

Patents Applicationslast 30 patents

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

RESISTIVE MEMORY FOR ANALOG COMPUTING

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

MANUFACTURING METHOD OF RESISTIVE RANDOM ACCESS MEMORY DEVICE

SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME

SWITCHING LAYER SCHEME TO ENHANCE RRAM PERFORMANCE

MEMORY DEVICES AND METHODS OF FORMING THE SAME

CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...

MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY

MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE H...

HIGH DENSITY RERAM INTEGRATION WITH INTERCONNECT

SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND ME...

RRAM DEVICE STRUCTURE AND MANUFACTURING METHOD

MEMORY DEVICE AND METHOD OF FORMING THE SAME

Conductive Interconnects Suitable for Utilization in Integrated Ass...

Memory Arrays And Methods Of Forming An Array Of Memory Cells

MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE H...

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD OF T...

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...

MEMORY CELL MANUFACTURING METHOD