Patterning process specially adapted for achieving sub-lithographic dimensions

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H01L45/1691

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1691Patterning process specially adapted for achieving sub-lithographic dimensions

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and manufacturing method thereoff
- Patent number 11,637,241
- Issue date Apr 25, 2023
- Winbond Electronics Corp.
- Meng-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, memory cell and method of forming the same
- Patent number 11,594,576
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with vertical transport transistor
- Patent number 11,588,104
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a memoristic array with an implanted hard mask
- Patent number 11,569,440
- Issue date Jan 31, 2023
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,563,173
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of fabricating the same
- Patent number 11,502,130
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Kyusul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device with voltage control elements
- Patent number 11,476,304
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Setting an upper bound on RRAM resistance
- Patent number 11,430,514
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Youngseok Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM cell structure with conductive etch-stop layer
- Patent number 11,430,956
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory device and method
- Patent number 11,411,181
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of fabricating the same
- Patent number 11,411,179
- Issue date Aug 9, 2022
- Samsung Electronics Co., Ltd.
- Jaeho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including data storage material pattern
- Patent number 11,387,410
- Issue date Jul 12, 2022
- Samsung Electronics Co., Ltd.
- Jeonghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-sided liner PCM cell for 3D crossbar PCM memory
- Patent number 11,355,706
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device having an anti-oxidation layer an...
- Patent number 11,296,277
- Issue date Apr 5, 2022
- Samsung Electronics Co., Ltd.
- Sanghoon Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory elements with a narrowed electrode
- Patent number 11,289,649
- Issue date Mar 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lup San Leong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory (RRAM) cell with recessed bottom ele...
- Patent number 11,289,648
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,276,821
- Issue date Mar 15, 2022
- Samsung Electronics Co., Ltd.
- Seulji Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom conductive structure with a limited top contact area
- Patent number 11,239,278
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar resistive random-access memory (RRAM) device with a shared t...
- Patent number 11,227,997
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including liners comprising alucone and re...
- Patent number 11,223,014
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Zhe Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ReRAM formed by metal-assisted chemical etching with replacement...
- Patent number 11,196,001
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory (RRAM) cell with recessed bottom ele...
- Patent number 11,189,789
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with conductive etch-stop layer
- Patent number 11,158,797
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multivalent oxide spacers for analog switching resistive memory
- Patent number 11,158,793
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory with core and shell oxides and interface dipoles
- Patent number 11,145,811
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change random access memory and method of manufacturing
- Patent number 11,139,430
- Issue date Oct 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays and methods of forming an array of memory cells
- Patent number 11,121,177
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT PHASE-CHANGE MEMORY DEVICE
- Publication number 20230397510
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANARIZATION-LESS PHASE CHANGE MATERIAL SWITCH
- Publication number 20230397511
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230380192
- Publication date Nov 23, 2023
- SK HYNIX INC.
- Jong Min YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE
- Publication number 20230292637
- Publication date Sep 14, 2023
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE WITH ULTRA-THIN BARRIER LAYER AND METHODS O...
- Publication number 20230284540
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230276720
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Shuo LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230240156
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der CHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT
- Publication number 20230200265
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES
- Publication number 20230200269
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT
- Publication number 20230189668
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS
- Publication number 20230180636
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT
- Publication number 20230144050
- Publication date May 11, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MEMORY PILLAR
- Publication number 20230099303
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK
- Publication number 20230064578
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20230055569
- Publication date Feb 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH RESISTANCE DRIFT CORRECTION
- Publication number 20230047004
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICE AND METHOD OF FABRICATING THE...
- Publication number 20230020564
- Publication date Jan 19, 2023
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILAMENT-METAL OXIDE CHANNEL EXCHANGE RESISTIVE MEMORY DEVICE
- Publication number 20220399497
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Laura Bégon-Lours
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH VERTICAL TRANSPORT TRANSISTOR
- Publication number 20220399491
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY CELL AND METHOD OF FABRICATING THE SAME
- Publication number 20220352463
- Publication date Nov 3, 2022
- WINBOND ELECTRONICS CORP.
- Po-Yen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-Change Memory Device and Method
- Publication number 20220352465
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF FORMING THE SAME
- Publication number 20220336740
- Publication date Oct 20, 2022
- United Semiconductor (Xiamen) Co., Ltd.
- DEJIN KONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOCKET STRUCTURE FOR SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY
- Publication number 20220319595
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Robert Douglas Cassel
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTOR AND PREPARATION METHOD THEREOF
- Publication number 20220320424
- Publication date Oct 6, 2022
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture
- Publication number 20220310914
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung-Ying Lee
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL PHASE CHANGE BRIDGE MEMORY CELL
- Publication number 20220302377
- Publication date Sep 22, 2022
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS

Patterning process specially adapted for achieving sub-lithographic dimensions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Resistive random access memory and manufacturing method thereoff

Electronic device

Stackable symmetrical operation memory bit cell structure with bidi...

Semiconductor device, memory cell and method of forming the same

Resistive memory with vertical transport transistor

Making a memoristic array with an implanted hard mask

PCM cell with resistance drift correction

Variable resistance memory device and method of fabricating the same

Phase change memory device with voltage control elements

Setting an upper bound on RRAM resistance

RRAM cell structure with conductive etch-stop layer

Phase-change memory device and method

Variable resistance memory device and method of fabricating the same

Semiconductor device including data storage material pattern

Single-sided liner PCM cell for 3D crossbar PCM memory

Variable resistance memory device having an anti-oxidation layer an...

Non-volatile memory elements with a narrowed electrode

Resistive random-access memory (RRAM) cell with recessed bottom ele...

Variable resistance memory device

Bottom conductive structure with a limited top contact area

Planar resistive random-access memory (RRAM) device with a shared t...

Semiconductor structures including liners comprising alucone and re...

3D ReRAM formed by metal-assisted chemical etching with replacement...

Resistive random-access memory (RRAM) cell with recessed bottom ele...

RRAM cell structure with conductive etch-stop layer

Multivalent oxide spacers for analog switching resistive memory

Resistive memory with core and shell oxides and interface dipoles

Phase change random access memory and method of manufacturing

Memory arrays and methods of forming an array of memory cells

Patents Applicationslast 30 patents

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

LOW CURRENT PHASE-CHANGE MEMORY DEVICE

PLANARIZATION-LESS PHASE CHANGE MATERIAL SWITCH

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE

RESISTIVE MEMORY DEVICE WITH ULTRA-THIN BARRIER LAYER AND METHODS O...

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES

SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT

SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

EMBEDDED MEMORY PILLAR

MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

PCM CELL WITH RESISTANCE DRIFT CORRECTION

RESISTIVE RANDOM-ACCESS MEMORY DEVICE AND METHOD OF FABRICATING THE...

FILAMENT-METAL OXIDE CHANNEL EXCHANGE RESISTIVE MEMORY DEVICE

RESISTIVE MEMORY WITH VERTICAL TRANSPORT TRANSISTOR

RESISTIVE RANDOM ACCESS MEMORY CELL AND METHOD OF FABRICATING THE SAME

Phase-Change Memory Device and Method

RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF FORMING THE SAME

SOCKET STRUCTURE FOR SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY

SELECTOR AND PREPARATION METHOD THEREOF

Semiconductor Devices and Methods of Manufacture

VERTICAL PHASE CHANGE BRIDGE MEMORY CELL