Phosphides

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CPC
H01L21/02461

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02461Phosphides

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth on a gallium arsenide phosphide capped material on...
- Patent number 11,881,683
- Issue date Jan 23, 2024
- The Regents of the University of California
- Constance J. Chang-Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V fins by aspect ratio trapping and self-aligned etch to remove...
- Patent number 11,776,956
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming semiconductor layers
- Patent number 11,735,418
- Issue date Aug 22, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layer
- Patent number 11,721,548
- Issue date Aug 8, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a heterostructure comprising active or passi...
- Patent number 11,698,488
- Issue date Jul 11, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate, bonding-layer-including polycrys...
- Patent number 11,545,356
- Issue date Jan 3, 2023
- Sumitomo Electric Industries, Ltd.
- Keiichiro Geshi
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized Heteroepitaxial growth of semiconductors
- Patent number 11,384,448
- Issue date Jul 12, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate
- Patent number 11,189,754
- Issue date Nov 30, 2021
- Epistar Corporation
- Meng-Yang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of compound semiconductor substrate for epitaxial growt...
- Patent number 11,087,974
- Issue date Aug 10, 2021
- The Regents of the University of Michigan
- Stephen R. Forrest
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure semiconductor device and manufacturing method
- Patent number 11,037,782
- Issue date Jun 15, 2021
- Comptek Solutions Oy
- Johnny Dahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V fins by aspect ratio trapping and self-aligned etch to remove...
- Patent number 11,031,393
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,930,547
- Issue date Feb 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Ying Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layers having composite structures
- Patent number 10,916,422
- Issue date Feb 9, 2021
- Xiamen Changelight Co., Ltd.
- Kaixuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,867,834
- Issue date Dec 15, 2020
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Min-Ying Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single column compound semiconductor bipolar junction transistor wi...
- Patent number 10,833,181
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Food and beverage compositions infused with lipophilic active agent...
- Patent number 10,756,180
- Issue date Aug 25, 2020
- POVIVA CORP.
- Michelle Reillo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked indium gallium arsenide nanosheets on silicon with bottom t...
- Patent number 10,748,990
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387242
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MIN-YING TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...
- Publication number 20240304703
- Publication date Sep 12, 2024
- University of Southern California
- Ajey Poovannummoottil JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layers
- Publication number 20230135654
- Publication date May 4, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES
- Publication number 20220328311
- Publication date Oct 13, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20220285151
- Publication date Sep 8, 2022
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Layered Structure
- Publication number 20220254633
- Publication date Aug 11, 2022
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layer
- Publication number 20220028689
- Publication date Jan 27, 2022
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...
- Publication number 20210249410
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210183649
- Publication date Jun 17, 2021
- Comptek Solutions Oy
- Johnny DAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a heterostructure
- Publication number 20210090955
- Publication date Mar 25, 2021
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Xin OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...
- Publication number 20200176445
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF COMPOUND SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWT...
- Publication number 20200111667
- Publication date Apr 9, 2020
- The Regents of the University of Michigan
- Stephen R. Forrest
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WI...
- Publication number 20200091322
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...
- Publication number 20190305084
- Publication date Oct 3, 2019
- PoViva Tea, LLC
- Michelle Reillo
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WI...
- Publication number 20190157434
- Publication date May 23, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE, BONDING-LAYER-INCLUDING POLYCRYS...
- Publication number 20190131123
- Publication date May 2, 2019
- Sumitomo Electric Industries, Ltd.
- Keiichiro GESHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYERS HAVING COMPOSITE STRUCTURES
- Publication number 20190088476
- Publication date Mar 21, 2019
- XIAMEN CHANGELIGHT CO., LTD.
- Kaixuan Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...
- Publication number 20190035891
- Publication date Jan 31, 2019
- PoViva Tea, LLC
- Michelle Reillo
- B82 - NANO-TECHNOLOGY
Information Patent Application
FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...
- Publication number 20190035890
- Publication date Jan 31, 2019
- PoViva Tea, LLC
- Michelle Reillo
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH-QUALITY, SINGLE-CRYSTALLINE SILICON-GERMANIUM FILMS
- Publication number 20190013200
- Publication date Jan 10, 2019
- Wisconsin Alumni Research Foundation
- Max G. Lagally
- C30 - CRYSTAL GROWTH
Information Patent Application
Device Isolation for III-V Substrates
- Publication number 20180350919
- Publication date Dec 6, 2018
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20180350660
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- MIN-YING TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...
- Publication number 20180233559
- Publication date Aug 16, 2018
- PoViva Tea, LLC
- Michelle Reillo
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Single crystal semiconductor structure and method of manufacturing...

Epitaxial growth on a gallium arsenide phosphide capped material on...

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

III-V fins by aspect ratio trapping and self-aligned etch to remove...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method for forming semiconductor layers

Method for forming semiconductor layer

Method for fabricating a heterostructure comprising active or passi...

Optimized heteroepitaxial growth of semiconductors

Polycrystalline ceramic substrate, bonding-layer-including polycrys...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteropitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteroepitaxial growth of semiconductors

Semiconductor substrate

Preparation of compound semiconductor substrate for epitaxial growt...

Heterostructure semiconductor device and manufacturing method

III-V fins by aspect ratio trapping and self-aligned etch to remove...

Semiconductor structure and manufacturing method thereof

Buffer layers having composite structures

Semiconductor structure and manufacturing method thereof

Single column compound semiconductor bipolar junction transistor wi...

Food and beverage compositions infused with lipophilic active agent...

Stacked indium gallium arsenide nanosheets on silicon with bottom t...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

Method for Forming Semiconductor Layers

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

Optimized Heteroepitaxial Growth of Semiconductors

Semiconductor Layered Structure

Method for Forming Semiconductor Layer

III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...

HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Method for preparing a heterostructure

III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...

PREPARATION OF COMPOUND SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWT...

SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WI...

FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...

SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WI...

POLYCRYSTALLINE CERAMIC SUBSTRATE, BONDING-LAYER-INCLUDING POLYCRYS...

BUFFER LAYERS HAVING COMPOSITE STRUCTURES

FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...

FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...

HIGH-QUALITY, SINGLE-CRYSTALLINE SILICON-GERMANIUM FILMS

Device Isolation for III-V Substrates

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENT...