Phosphides

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H01L21/02392

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02392Phosphides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 12,027,589
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
High thermal conductivity boron arsenide for thermal management, el...
- Patent number 11,948,858
- Issue date Apr 2, 2024
- The Regents of the University of California
- Yongjie Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 11,894,272
- Issue date Feb 6, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,848,206
- Issue date Dec 19, 2023
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,830,955
- Issue date Nov 28, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for depositing III-alloys on substrates and compositions th...
- Patent number 11,721,550
- Issue date Aug 8, 2023
- United States Department of Energy
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a III-V construction on a group IV substrate
- Patent number 11,646,200
- Issue date May 9, 2023
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity surface-emitting laser fabrication on large wafer
- Patent number 11,588,299
- Issue date Feb 21, 2023
- Mellanox Technologies, Ltd.
- Vladimir Iakovlev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,569,399
- Issue date Jan 31, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Semiconductor device and method of forming low voltage power MOSFET...
- Patent number 11,545,565
- Issue date Jan 3, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide crystal substrate
- Patent number 11,456,363
- Issue date Sep 27, 2022
- Sumitomo Electric Industries, Ltd.
- Muneyuki Nishioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,456,172
- Issue date Sep 27, 2022
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized Heteroepitaxial growth of semiconductors
- Patent number 11,384,448
- Issue date Jul 12, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,217,447
- Issue date Jan 4, 2022
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase growth device, and EPI wafer producing method
- Patent number 11,162,187
- Issue date Nov 2, 2021
- Sumitomo Electric Industries, Ltd.
- Takashi Go
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Preparation of compound semiconductor substrate for epitaxial growt...
- Patent number 11,087,974
- Issue date Aug 10, 2021
- The Regents of the University of Michigan
- Stephen R. Forrest
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure semiconductor device and manufacturing method
- Patent number 11,037,782
- Issue date Jun 15, 2021
- Comptek Solutions Oy
- Johnny Dahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods of dislocation filtering for layer transfer
- Patent number 10,903,073
- Issue date Jan 26, 2021
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...
- Publication number 20240243034
- Publication date Jul 18, 2024
- The Regents of the University of California
- Yongjie HU
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUB...
- Publication number 20240120238
- Publication date Apr 11, 2024
- FILNEX INC.
- Mitsuhiko OGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHI...
- Publication number 20230392289
- Publication date Dec 7, 2023
- JX NIPPON MINING & METALS CORPORATION
- Kodai YAMAGISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING SEMICONDUCTOR NANOWIRES USING A CATALYST ALLOY
- Publication number 20230178369
- Publication date Jun 8, 2023
- Magnus Tarlé BORGSTRÖM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM
- Publication number 20230127862
- Publication date Apr 27, 2023
- RichHealth Technology Corporation
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20220399201
- Publication date Dec 15, 2022
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES
- Publication number 20220328311
- Publication date Oct 13, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...
- Publication number 20220157661
- Publication date May 19, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Device and Method of Forming Low Voltage Power Mosfet...
- Publication number 20220123134
- Publication date Apr 21, 2022
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING III-ALLOYS ON SUBSTRATES AND COMPOSITIONS TH...
- Publication number 20220108889
- Publication date Apr 7, 2022
- UNITED STATES DEPARTMENT OF ENERGY
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20220028683
- Publication date Jan 27, 2022
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE
- Publication number 20210358748
- Publication date Nov 18, 2021
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED PLANAR BUFFER FOR NANOWIRES
- Publication number 20210210599
- Publication date Jul 8, 2021
- Microsoft Technology Licensing, LLC
- Geoffrey C. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210183649
- Publication date Jun 17, 2021
- Comptek Solutions Oy
- Johnny DAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a heterostructure
- Publication number 20210090955
- Publication date Mar 25, 2021
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Xin OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...
- Publication number 20210074815
- Publication date Mar 11, 2021
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...
- Publication number 20210035885
- Publication date Feb 4, 2021
- The Regents of the University of California
- Yongjie HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210017669
- Publication date Jan 21, 2021
- GLOBALWAFERS CO., LTD.
- Yen-Lun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...
- Publication number 20200286786
- Publication date Sep 10, 2020
- Massachusetts Institute of Technology
- Jeehwan Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20200194255
- Publication date Jun 18, 2020
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
VAPOR PHASE GROWTH DEVICE, AND EPI WAFER PRODUCING METHOD
- Publication number 20200165744
- Publication date May 28, 2020
- Sumitomo Electric Industries, Ltd.
- Takashi GO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PREPARATION OF COMPOUND SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWT...
- Publication number 20200111667
- Publication date Apr 9, 2020
- The Regents of the University of Michigan
- Stephen R. Forrest
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE CARRIER TRANSPORT FACILITATED BY STRAIN
- Publication number 20190378929
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE WITH ZnO EMITTER
- Publication number 20190341528
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Semiconductor device including graphene and method of manufacturing...

High thermal conductivity boron arsenide for thermal management, el...

Semiconductor substrate, method for manufacturing semiconductor sub...

Method of producing a two-dimensional material

Transdermal microneedle continuous monitoring system

Optimized heteroepitaxial growth of semiconductors

Graded planar buffer for nanowires

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Methods for depositing III-alloys on substrates and compositions th...

Integration of a III-V construction on a group IV substrate

Optimized heteroepitaxial growth of semiconductors

Vertical-cavity surface-emitting laser fabrication on large wafer

Transdermal microneedle continuous monitoring system

Semiconductor device and method of forming low voltage power MOSFET...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Indium phosphide crystal substrate

Method of producing a two-dimensional material

Optimized Heteropitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteroepitaxial growth of semiconductors

Method of producing a two-dimensional material

Vapor phase growth device, and EPI wafer producing method

Preparation of compound semiconductor substrate for epitaxial growt...

Heterostructure semiconductor device and manufacturing method

Systems and methods of dislocation filtering for layer transfer

Patents Applicationslast 30 patents

HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUB...

INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHI...

METHOD OF GROWING SEMICONDUCTOR NANOWIRES USING A CATALYST ALLOY

TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES

Optimized Heteroepitaxial Growth of Semiconductors

EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...

Semiconductor Device and Method of Forming Low Voltage Power Mosfet...

METHODS FOR DEPOSITING III-ALLOYS ON SUBSTRATES AND COMPOSITIONS TH...

METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE

GRADED PLANAR BUFFER FOR NANOWIRES

HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Method for preparing a heterostructure

SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...

HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...

SEMICONDUCTOR EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME

EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...

METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

VAPOR PHASE GROWTH DEVICE, AND EPI WAFER PRODUCING METHOD

PREPARATION OF COMPOUND SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWT...

CHARGE CARRIER TRANSPORT FACILITATED BY STRAIN

LIGHT EMITTING DIODE WITH ZnO EMITTER