Planar doping

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CPC
H01L29/365

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/365Planar doping

Industries

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Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 11,923,422
- Issue date Mar 5, 2024
- GlobalWafers Co., Ltd.
- Ming-Shien Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,823,898
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,995
- Issue date Jun 13, 2023
- Kabushiki Kaisha Toshiba
- Masato Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell and solar cell module
- Patent number 11,398,574
- Issue date Jul 26, 2022
- Panasonic Holdings Corporation
- Kazunori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride electromagnetic pulse arrestor
- Patent number 11,227,844
- Issue date Jan 18, 2022
- National Technology & Engineering Solutions of Sandia, LLC
- Robert Kaplar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 11,162,190
- Issue date Nov 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide semiconductor substrate
- Patent number 11,158,503
- Issue date Oct 26, 2021
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tipless transistors, short-tip transistors, and methods and circuit...
- Patent number 11,145,647
- Issue date Oct 12, 2021
- United Semiconductor Japan Co., Ltd.
- David A. Kidd
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhancement-mode device and method for manufacturing the same
- Patent number 10,998,435
- Issue date May 4, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating III-nitride tunnel junction devices
- Patent number 10,985,285
- Issue date Apr 20, 2021
- The Regents of the University of California
- Benjamin P. Yonkee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 10,879,361
- Issue date Dec 29, 2020
- United Microelectronics Corp.
- Chen-Wei Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,867,790
- Issue date Dec 15, 2020
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, semiconductor device, and method f...
- Patent number 10,818,757
- Issue date Oct 27, 2020
- SCIOCS COMPANY LIMITED
- Yoshinobu Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,777,645
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride tunnel junction with modified P-N interface
- Patent number 10,685,835
- Issue date Jun 16, 2020
- The Regents of the University of California
- Benjamin P. Yonkee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secured electronic chip
- Patent number 10,685,923
- Issue date Jun 16, 2020
- STMicroelectronics (Rousset) SAS
- Alexandre Sarafianos
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device
- Patent number 10,680,091
- Issue date Jun 9, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tomoyoshi Kushida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate and method of manufacturing...
- Patent number 10,615,031
- Issue date Apr 7, 2020
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,615,261
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube semiconductor devices
- Patent number 10,593,759
- Issue date Mar 17, 2020
- Alpha & Omega Semiconductor, Inc.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tipless transistors, short-tip transistors, and methods and circuit...
- Patent number 10,573,644
- Issue date Feb 25, 2020
- Mie Fujitsu Semiconductor Limited
- David A. Kidd
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 10,526,726
- Issue date Jan 7, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quantum doping method and use in fabrication of nanoscale electroni...
- Patent number 10,510,876
- Issue date Dec 17, 2019
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 10,490,646
- Issue date Nov 26, 2019
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond based current aperture vertical transistor and methods of m...
- Patent number 10,418,475
- Issue date Sep 17, 2019
- Arizona Board of Regents on behalf of Arizona State University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high linearity-transconductance
- Patent number 10,411,125
- Issue date Sep 10, 2019
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,411,100
- Issue date Sep 10, 2019
- United Microelectronics Corp.
- Chen-Wei Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,411,101
- Issue date Sep 10, 2019
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047200
- Publication date Feb 8, 2024
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20240011191
- Publication date Jan 11, 2024
- Resonac Corporation
- Kensho TANAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230387287
- Publication date Nov 30, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20220149160
- Publication date May 12, 2022
- SHOWA DENKO K.K.
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20220033992
- Publication date Feb 3, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210098252
- Publication date Apr 1, 2021
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210005718
- Publication date Jan 7, 2021
- GLOBALWAFERS CO., LTD.
- Ming-Shien Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200286989
- Publication date Sep 10, 2020
- Kabushiki Kaisha Toshiba
- Masato Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20200219723
- Publication date Jul 9, 2020
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...
- Publication number 20200161436
- Publication date May 21, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIPLESS TRANSISTORS, SHORT-TIP TRANSISTORS, AND METHODS AND CIRCUIT...
- Publication number 20200152626
- Publication date May 14, 2020
- United Semiconductor Japan Co., Ltd.
- David A. Kidd
- G11 - INFORMATION STORAGE
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD F...
- Publication number 20200127101
- Publication date Apr 23, 2020
- SCIOCS COMPANY LIMITED
- Yoshinobu NARITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement-mode Device and Method for Manufacturing the Same
- Publication number 20200119177
- Publication date Apr 16, 2020
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20200109489
- Publication date Apr 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...
- Publication number 20200035793
- Publication date Jan 30, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A D...
- Publication number 20190386123
- Publication date Dec 19, 2019
- SKYWORKS SOLUTIONS, INC.
- Peter J. Zampardi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20190348507
- Publication date Nov 14, 2019
- United Microelectronics Corp.
- Chen-Wei Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanotube Semiconductor Devices
- Publication number 20190333994
- Publication date Oct 31, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190115211
- Publication date Apr 18, 2019
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOTUBE SEMICONDUCTOR DEVICES
- Publication number 20190043947
- Publication date Feb 7, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE
- Publication number 20180374699
- Publication date Dec 27, 2018
- The Regents of the University of California
- Benjamin P. Yonkee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20180374922
- Publication date Dec 27, 2018
- United Microelectronics Corp.
- Chen-Wei Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20180350967
- Publication date Dec 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES AND METHODS FOR FORMING SAME
- Publication number 20180323265
- Publication date Nov 8, 2018
- Global Wafers Co., Ltd
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURED ELECTRONIC CHIP
- Publication number 20180261560
- Publication date Sep 13, 2018
- STMicroelectronics (Rousset) SAS
- Alexandre SARAFIANOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SILICON WAFER
- Publication number 20180197751
- Publication date Jul 12, 2018
- SUMCO CORPORATION
- Yasuo KOIKE
- C30 - CRYSTAL GROWTH
Information Patent Application
Quantum Doping Method and Use in Fabrication of Nanoscale Electroni...
- Publication number 20180174842
- Publication date Jun 21, 2018
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING...
- Publication number 20180040480
- Publication date Feb 8, 2018
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A D...
- Publication number 20170358667
- Publication date Dec 14, 2017
- SKYWORKS SOLUTIONS, INC.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS

Planar doping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

Solar cell and solar cell module

Gallium nitride electromagnetic pulse arrestor

Method for producing nitride crystal and nitride crystal

Silicon carbide semiconductor substrate

Tipless transistors, short-tip transistors, and methods and circuit...

Enhancement-mode device and method for manufacturing the same

Methods for fabricating III-nitride tunnel junction devices

Method for manufacturing semiconductor structure

Semiconductor device and method for manufacturing the same

Nitride semiconductor substrate, semiconductor device, and method f...

P-N junction based devices with single species impurity for P-type...

III-nitride tunnel junction with modified P-N interface

Secured electronic chip

Semiconductor device

Silicon carbide semiconductor substrate and method of manufacturing...

P-N junction based devices with single species impurity for P-type...

Nanotube semiconductor devices

Tipless transistors, short-tip transistors, and methods and circuit...

System and method for substrate wafer back side and edge cross sect...

Method for producing nitride crystal and nitride crystal

Quantum doping method and use in fabrication of nanoscale electroni...

Semiconductor device and semiconductor device manufacturing method

Diamond based current aperture vertical transistor and methods of m...

Semiconductor device having high linearity-transconductance

Semiconductor structure and manufacturing method thereof

P-N junction based devices with single species impurity for P-type...

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...

TIPLESS TRANSISTORS, SHORT-TIP TRANSISTORS, AND METHODS AND CIRCUIT...

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD F...

Enhancement-mode Device and Method for Manufacturing the Same

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...

METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A D...

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Nanotube Semiconductor Devices

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NANOTUBE SEMICONDUCTOR DEVICES

III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Ga2O3 SEMICONDUCTOR ELEMENT

SEMICONDUCTOR HETEROSTRUCTURES AND METHODS FOR FORMING SAME

SECURED ELECTRONIC CHIP

EPITAXIAL SILICON WAFER

Quantum Doping Method and Use in Fabrication of Nanoscale Electroni...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING...

METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A D...