Plural dram cells share common contact or common trench

Industry

CPC
Y10S257/905

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

Current Industry

Y10S257/905Plural dram cells share common contact or common trench

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Trench-gated MIS devices
- Patent number 9,324,858
- Issue date Apr 26, 2016
- Vishay Siliconix
- Anup Bhalla
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Multi-resistive integrated circuit memory
- Patent number 8,878,274
- Issue date Nov 4, 2014
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Power device with self-aligned source regions
- Patent number 8,716,783
- Issue date May 6, 2014
- Fairchild Semiconductor Corporation
- Robert Herrick
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Multiple layer barrier metal for device component formed in contact...
- Patent number 8,580,676
- Issue date Nov 12, 2013
- Alpha and Omega Semiconductor Incorporated
- Hong Chang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of fabricating flash memory devices having shared sub activ...
- Patent number 8,329,574
- Issue date Dec 11, 2012
- Samsung Electronics Co., Ltd.
- Jong-Sun Sel
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Multiple layer barrier metal for device component formed in contact...
- Patent number 8,138,605
- Issue date Mar 20, 2012
- Alpha & Omega Semiconductor, Inc.
- Hong Chang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Container capacitor structure and method of formation thereof
- Patent number 8,124,491
- Issue date Feb 28, 2012
- Micron Technology, Inc.
- D. Mark Durcan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Multi-resistive integrated circuit memory
- Patent number 8,093,643
- Issue date Jan 10, 2012
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit devices having contacts formed of...
- Patent number 8,053,831
- Issue date Nov 8, 2011
- Samsung Electronics Co., Ltd.
- Man-Jong Yu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Power device with trenches having wider upper portion than lower po...
- Patent number 8,034,682
- Issue date Oct 11, 2011
- Fairchild Semiconductor Corporation
- Robert Herrick
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of fabricating flash memory devices having shared sub activ...
- Patent number 8,021,978
- Issue date Sep 20, 2011
- Samsung Electronics Co., Ltd.
- Jong-Sun Sel
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory cell array with specific placement of field stoppers
- Patent number 7,876,610
- Issue date Jan 25, 2011
- Kabushiki Kaisha Toshiba
- Kenji Gomikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures of and methods of fabricating trench-gated MIS devices
- Patent number 7,868,381
- Issue date Jan 11, 2011
- Vishay Siliconix
- Anup Bhalla
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Power device with trenches having wider upper portion than lower po...
- Patent number 7,799,636
- Issue date Sep 21, 2010
- Fairchild Semiconductor Corporation
- Robert Herrick
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 7,759,174
- Issue date Jul 20, 2010
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for subtracting or adding charge in a charge-coupled device
- Patent number 7,750,962
- Issue date Jul 6, 2010
- Massachusetts Institute of Technology
- Michael P. Anthony
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Capacitor that includes high permittivity capacitor dielectric
- Patent number 7,745,279
- Issue date Jun 29, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,732,816
- Issue date Jun 8, 2010
- Innovative Silicon ISi Sa
- Pierre Fazan
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory devices having shared sub active regions
- Patent number 7,723,776
- Issue date May 25, 2010
- Samsung Electronics Co., Ltd.
- Jong-Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density memory array having increased channel widths
- Patent number 7,667,234
- Issue date Feb 23, 2010
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-resistive integrated circuit memory
- Patent number 7,642,591
- Issue date Jan 5, 2010
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Container capacitor structure and method of formation thereof
- Patent number 7,625,795
- Issue date Dec 1, 2009
- Micron Technology, Inc.
- D. Mark Durcan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with trenches having wider upper portion than lower po...
- Patent number 7,595,524
- Issue date Sep 29, 2009
- Fairchild Semiconductor Corporation
- Robert Herrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Container capacitor structure and method of formation thereof
- Patent number 7,579,235
- Issue date Aug 25, 2009
- Micron Technology, Inc.
- D. Mark Durcan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,541,616
- Issue date Jun 2, 2009
- Innovative Silicon ISi Sa
- Pierre Fazan
- G11 - INFORMATION STORAGE
Information Patent Grant
Power MOSFET and method for forming same using a self-aligned body...
- Patent number 7,501,323
- Issue date Mar 10, 2009
- Fairchild Semiconductor Corporation
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metallic bit-line contacts
- Patent number 7,473,953
- Issue date Jan 6, 2009
- Infineon Technologies AG
- Ralf Staub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory
- Patent number 7,462,902
- Issue date Dec 9, 2008
- Powerchip Semiconductor Corp.
- Ching-Sung Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating cell of nonvolatile memory device with floati...
- Patent number 7,449,763
- Issue date Nov 11, 2008
- Samsung Electronics Co., Ltd.
- Chang-Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having both memory and logic circuit and its m...
- Patent number 7,429,507
- Issue date Sep 30, 2008
- Fujitsu Limited
- Narumi Ohkawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT...
- Publication number 20120129328
- Publication date May 24, 2012
- ALPHA & OMEGA SEMICONDUCTOR, INC
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power device with self-aligned source regions
- Publication number 20120119291
- Publication date May 17, 2012
- Robert Herrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY
- Publication number 20120099366
- Publication date Apr 26, 2012
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FABRICATING FLASH MEMORY DEVICES HAVING SHARED SUB ACTIV...
- Publication number 20110318902
- Publication date Dec 29, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Jong-Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT...
- Publication number 20110095361
- Publication date Apr 28, 2011
- ALPHA & OMEGA SEMICONDUCTOR, INC
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES
- Publication number 20110042742
- Publication date Feb 24, 2011
- VISHAY-SILICONIX
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Device With Trenches Having Wider Upper Portion Than Lower Po...
- Publication number 20110003449
- Publication date Jan 6, 2011
- Robert Herrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING FLASH MEMORY DEVICES HAVING SHARED SUB ACTIV...
- Publication number 20100184263
- Publication date Jul 22, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Jong-Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY
- Publication number 20100073993
- Publication date Mar 25, 2010
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Application
Power Device With Trenches Having Wider Upper Portion Than Lower Po...
- Publication number 20100015769
- Publication date Jan 21, 2010
- Robert Herrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTAINER CAPACITOR STRUCTURE AND METHOD OF FORMATION THEREOF
- Publication number 20090311843
- Publication date Dec 17, 2009
- Micron Technology, Inc.
- D. Mark Durcan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF NONVOLATILE MEMORY
- Publication number 20090042350
- Publication date Feb 12, 2009
- POWERCHIP SEMICONDUCTOR CORP.
- Ching-Sung Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit devices and fabrication methods th...
- Publication number 20090020808
- Publication date Jan 22, 2009
- Samsung Electronics Co., Ltd.
- Man-Jong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20080165577
- Publication date Jul 10, 2008
- Pierre Fazan
- G11 - INFORMATION STORAGE
Information Patent Application
Power Device with Trenches Having Wider Upper Portion than Lower Po...
- Publication number 20080164519
- Publication date Jul 10, 2008
- Robert Herrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20080073719
- Publication date Mar 27, 2008
- Pierre Fazan
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device
- Publication number 20080068882
- Publication date Mar 20, 2008
- Pierre Fazan
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device
- Publication number 20080055974
- Publication date Mar 6, 2008
- Pierre Fazan
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATING METALLIC BIT-LINE CONTACTS
- Publication number 20080048229
- Publication date Feb 28, 2008
- Ralf Staub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density memory array having increased channel widths
- Publication number 20070241395
- Publication date Oct 18, 2007
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPOSED OF HIGH VOLTAGE TRANSISTORS
- Publication number 20070208903
- Publication date Sep 6, 2007
- Kenji Gomikawa
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE FOR SUBTRACTING OR ADDING CHARGE IN A CHARGE-COUPLED DEVICE
- Publication number 20070161145
- Publication date Jul 12, 2007
- Michael P. Anthony
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070122946
- Publication date May 31, 2007
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory devices having shared sub active regions and methods o...
- Publication number 20070075336
- Publication date Apr 5, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Jong-Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming and using memory cell structures
- Publication number 20070035041
- Publication date Feb 15, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Container capacitor structure and method of formation thereof
- Publication number 20070032035
- Publication date Feb 8, 2007
- Micron Technology, Inc.
- D. Mark Durcan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING CELL OF NONVOLATILE MEMORY DEVICE WITH FLOATI...
- Publication number 20070029603
- Publication date Feb 8, 2007
- Samsung Electronics Co., Ltd.
- Chang-Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM memory device
- Publication number 20070004132
- Publication date Jan 4, 2007
- Kunal R. Parekh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY
- Publication number 20060198179
- Publication date Sep 7, 2006
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Application
Capacitor that includes high permittivity capacitor dielectric
- Publication number 20060124965
- Publication date Jun 15, 2006
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS

Plural dram cells share common contact or common trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Trench-gated MIS devices

Multi-resistive integrated circuit memory

Power device with self-aligned source regions

Multiple layer barrier metal for device component formed in contact...

Methods of fabricating flash memory devices having shared sub activ...

Multiple layer barrier metal for device component formed in contact...

Container capacitor structure and method of formation thereof

Multi-resistive integrated circuit memory

Semiconductor integrated circuit devices having contacts formed of...

Power device with trenches having wider upper portion than lower po...

Methods of fabricating flash memory devices having shared sub activ...

Memory cell array with specific placement of field stoppers

Structures of and methods of fabricating trench-gated MIS devices

Power device with trenches having wider upper portion than lower po...

Method of manufacturing a semiconductor device

Device for subtracting or adding charge in a charge-coupled device

Capacitor that includes high permittivity capacitor dielectric

Semiconductor device

Flash memory devices having shared sub active regions

High density memory array having increased channel widths

Multi-resistive integrated circuit memory

Container capacitor structure and method of formation thereof

Power device with trenches having wider upper portion than lower po...

Container capacitor structure and method of formation thereof

Semiconductor device

Power MOSFET and method for forming same using a self-aligned body...

Method for fabricating metallic bit-line contacts

Nonvolatile memory

Method of fabricating cell of nonvolatile memory device with floati...

Semiconductor device having both memory and logic circuit and its m...

Patents Applicationslast 30 patents

MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT...

Power device with self-aligned source regions

MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY

METHODS OF FABRICATING FLASH MEMORY DEVICES HAVING SHARED SUB ACTIV...

MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT...

STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES

Power Device With Trenches Having Wider Upper Portion Than Lower Po...

METHODS OF FABRICATING FLASH MEMORY DEVICES HAVING SHARED SUB ACTIV...

MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY

Power Device With Trenches Having Wider Upper Portion Than Lower Po...

CONTAINER CAPACITOR STRUCTURE AND METHOD OF FORMATION THEREOF

MANUFACTURING METHOD OF NONVOLATILE MEMORY

Semiconductor integrated circuit devices and fabrication methods th...

Semiconductor device

Power Device with Trenches Having Wider Upper Portion than Lower Po...

Semiconductor device

Semiconductor device

Semiconductor device

METHOD FOR FABRICATING METALLIC BIT-LINE CONTACTS

High density memory array having increased channel widths

SEMICONDUCTOR DEVICE COMPOSED OF HIGH VOLTAGE TRANSISTORS

DEVICE FOR SUBTRACTING OR ADDING CHARGE IN A CHARGE-COUPLED DEVICE

Semiconductor device and method of manufacturing the same

Flash memory devices having shared sub active regions and methods o...

Methods of forming and using memory cell structures

Container capacitor structure and method of formation thereof

METHOD OF FABRICATING CELL OF NONVOLATILE MEMORY DEVICE WITH FLOATI...

DRAM memory device

MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY

Capacitor that includes high permittivity capacitor dielectric