Polycrystalline emitter

Industry

CPC
Y10S148/124

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/124Polycrystalline emitter

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of producing the same
- Patent number 6,015,726
- Issue date Jan 18, 2000
- NEC Corporation
- Hiroshi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a walled-emitter transistor
- Patent number 5,846,868
- Issue date Dec 8, 1998
- Integrated Device Technology, Inc.
- Chuen-Der Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a thin poly, capacitor coupled contactless...
- Patent number 5,837,574
- Issue date Nov 17, 1998
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming BiCMOS devices having mosfet and bipolar sections...
- Patent number 5,804,476
- Issue date Sep 8, 1998
- Samsung Electronics Co., Ltd.
- Young-Soo Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high performance bipolar transistors in a B...
- Patent number 5,786,222
- Issue date Jul 28, 1998
- National Semiconductor Corporation
- Johan A. Darmawan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a bipolar device
- Patent number 5,643,805
- Issue date Jul 1, 1997
- Hitachi, Ltd.
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device and production thereof
- Patent number 5,619,069
- Issue date Apr 8, 1997
- Hitachi, Ltd.
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high performance bipolar transistors in a B...
- Patent number 5,594,268
- Issue date Jan 14, 1997
- National Semiconductor Corporation
- Johan A. Darmawan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Walled-emitter transistor
- Patent number 5,574,305
- Issue date Nov 12, 1996
- Integrated Device Technology, Inc.
- Chuen-Der Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing the current gain of bipolar junction transistors
- Patent number 5,565,370
- Issue date Oct 15, 1996
- United Technologies Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with a self-aligned heavily doped collector regi...
- Patent number 5,428,243
- Issue date Jun 27, 1995
- Northern Telecom Limited
- Ian W. Wylie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing the current gain of bipolar junction transistors
- Patent number 5,420,050
- Issue date May 30, 1995
- United Technologies Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor having a decreased col...
- Patent number 5,376,564
- Issue date Dec 27, 1994
- NEC Corporation
- Hiroshi Hirabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 5,358,883
- Issue date Oct 25, 1994
- Motorola, Inc.
- Wayne R. Burger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating self-aligned epitaxial base transistor
- Patent number 5,340,753
- Issue date Aug 23, 1994
- International Business Machines Corp.
- Ernest Bassous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a bipolar transistor
- Patent number 5,320,972
- Issue date Jun 14, 1994
- Northern Telecom Limited
- Ian W. Wylie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 5,318,917
- Issue date Jun 7, 1994
- Matsushita Electric Industrial Co., Ltd.
- Akihiro Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for semiconductor devices
- Patent number 5,296,388
- Issue date Mar 22, 1994
- Matsushita Electric Industrial Co., Ltd.
- Shuichi Kameyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a region dope...
- Patent number 5,270,224
- Issue date Dec 14, 1993
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature emitter process for high performance bipolar devices
- Patent number 5,266,504
- Issue date Nov 30, 1993
- International Business Machines Corporation
- Jeffrey L. Blouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for using a field implant mask to correct low doping levels...
- Patent number 5,258,317
- Issue date Nov 2, 1993
- Integrated Device Technology, Inc.
- Chuen-Der Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor operated at high speed
- Patent number 5,244,533
- Issue date Sep 14, 1993
- Kabushiki Kaisha Toshiba
- Koji Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 5,238,849
- Issue date Aug 24, 1993
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,204,276
- Issue date Apr 20, 1993
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling interfacial oxide at a polycrystalline/monoc...
- Patent number 5,194,397
- Issue date Mar 16, 1993
- International Business Machines Corporation
- Robert K. Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a bipolar transistor with a laterally graded em...
- Patent number 5,147,809
- Issue date Sep 15, 1992
- Samsung Electronics Co., Ltd.
- Tae-Young Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor device
- Patent number 5,147,810
- Issue date Sep 15, 1992
- Oki Electric Industry Co., Ltd.
- Kenichi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating low capacitance bipolar junction transistor
- Patent number 5,106,767
- Issue date Apr 21, 1992
- International Business Machines Corporation
- Janes H. Comfort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor
- Patent number 5,100,813
- Issue date Mar 31, 1992
- Kabushiki Kaisha Toshiba
- Hiroyuki Nihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,100,812
- Issue date Mar 31, 1992
- Kabushiki Kaisha Toshiba
- Yoshiki Yamada
- H01 - BASIC ELECTRIC ELEMENTS

Polycrystalline emitter

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of producing the same

Method for forming a walled-emitter transistor

Method of manufacturing a thin poly, capacitor coupled contactless...

Method of forming BiCMOS devices having mosfet and bipolar sections...

Method of manufacturing high performance bipolar transistors in a B...

Process for producing a bipolar device

Bipolar device and production thereof

Method of manufacturing high performance bipolar transistors in a B...

Walled-emitter transistor

Method of enhancing the current gain of bipolar junction transistors

Bipolar transistor with a self-aligned heavily doped collector regi...

Method of enhancing the current gain of bipolar junction transistors

Method of manufacturing a bipolar transistor having a decreased col...

Lateral bipolar transistor

Method for fabricating self-aligned epitaxial base transistor

Method of forming a bipolar transistor

Method of fabricating semiconductor device

Fabrication method for semiconductor devices

Method of manufacturing a semiconductor device having a region dope...

Low temperature emitter process for high performance bipolar devices

Method for using a field implant mask to correct low doping levels...

Method of manufacturing bipolar transistor operated at high speed

Method of fabricating semiconductor device

Method of manufacturing semiconductor device

Method for controlling interfacial oxide at a polycrystalline/monoc...

Method of producing a bipolar transistor with a laterally graded em...

Process for producing semiconductor device

Process for fabricating low capacitance bipolar junction transistor

Method of manufacturing bipolar transistor

Method of manufacturing semiconductor device