Preparation of substrate for selective deposition

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CPC
H01L21/02639

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02639Preparation of substrate for selective deposition

Industries

Patents Grantslast 30 patents

Information Patent Grant
Multi-gate string drivers having shared pillar structure
- Patent number 12,219,772
- Issue date Feb 4, 2025
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,148,814
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with semiconductor-on-insulator region and...
- Patent number 12,131,904
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,125,938
- Issue date Oct 22, 2024
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,107,157
- Issue date Oct 1, 2024
- United Microelectronics Corp.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,164
- Issue date Oct 1, 2024
- United Microelectronics Corp.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor element, semiconductor elemen...
- Patent number 12,065,760
- Issue date Aug 20, 2024
- Kyocera Corporation
- Masahiro Araki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device with conformal source/drain layer
- Patent number 12,057,495
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yao-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device using a patterned d...
- Patent number 12,057,311
- Issue date Aug 6, 2024
- Osram Opto Semiconductors GmbH
- Jens Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-containing STI liner for SiGe channel
- Patent number 12,046,479
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain epitaxial stacks
- Patent number 12,021,142
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reinforced thin-film device
- Patent number 12,009,431
- Issue date Jun 11, 2024
- Epinovatech AB
- Martin Andreas Olsson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pixel device on deep trench isolation (DTI) structure for image sensor
- Patent number 11,996,431
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,935,951
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures exposed in airgaps for semiconductor devices
- Patent number 11,923,409
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous semiconductor device substrates with high quality epi...
- Patent number 11,908,922
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer for source and drain structures to increase...
- Patent number 11,901,413
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with improved barrier layer
- Patent number 11,894,453
- Issue date Feb 6, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an optoelectronic semiconductor chip and optoe...
- Patent number 11,888,083
- Issue date Jan 30, 2024
- Osram Opto Semiconductors GmbH
- Werner Bergbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for collectively fabricating a plurality of semiconductor s...
- Patent number 11,876,073
- Issue date Jan 16, 2024
- Soitec
- David Sotta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cooling semiconductor devices
- Patent number 11,869,804
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- David H. Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,830,742
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layered source/drain regions having...
- Patent number 11,776,851
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250037998
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...
- Publication number 20250040244
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NANOWIRE, METHOD FOR MANUFACTURING THIN FI...
- Publication number 20250014898
- Publication date Jan 9, 2025
- BOE TECHNOLOGY GROUP CO., LTD.
- Hao WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429316
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421219
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING EPITAXIAL SEMICONDUCTOR LAYER AND METHOD OF MANUF...
- Publication number 20240412974
- Publication date Dec 12, 2024
- RNR LAB INC.
- Jeong Do RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE FETS
- Publication number 20240413232
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS
- Publication number 20240404824
- Publication date Dec 5, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395906
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20240371941
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20240339329
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Sheng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REINFORCED THIN-FILM DEVICE
- Publication number 20240332423
- Publication date Oct 3, 2024
- Epinovatech AB
- Martin Andreas Olsson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR
- Publication number 20240282797
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20240258408
- Publication date Aug 1, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...
- Publication number 20240243174
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...
- Publication number 20240191391
- Publication date Jun 13, 2024
- KYOCERA CORPORATION
- Toshihiro KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES
- Publication number 20240186373
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Mixed Substrate
- Publication number 20240186140
- Publication date Jun 6, 2024
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH METHOD FOR FDSOI HYBRID REGION
- Publication number 20240170287
- Publication date May 23, 2024
- Shanghai Huali Integrated Circuit Corporation
- Jiaqi HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...
- Publication number 20240145622
- Publication date May 2, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE MODIFIERS FOR ENHANCED EPITAXIAL NUCLEATION AND WETTING
- Publication number 20240145241
- Publication date May 2, 2024
- Applied Materials, Inc.
- Joe MARGETIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...
- Publication number 20240128336
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED BARRIER LAYER
- Publication number 20240120416
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of Forming One or More Covered Voids in a Semiconductor Sub...
- Publication number 20240087948
- Publication date Mar 14, 2024
- Micron Technology, Inc.
- David H. Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Growth of 2D Materials and Their Heterostructures
- Publication number 20240071759
- Publication date Feb 29, 2024
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240071761
- Publication date Feb 29, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Reducing Loss of Dielectric Layer in IO Silicon Oxide Re...
- Publication number 20240071760
- Publication date Feb 29, 2024
- Shanghai Huali Integrated Circuit Corporation
- Zhenquan Li
- H01 - BASIC ELECTRIC ELEMENTS

Preparation of substrate for selective deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multi-gate string drivers having shared pillar structure

Crystal growth method and a substrate for a semiconductor device

Semiconductor device

Semiconductor structure with semiconductor-on-insulator region and...

Nitride semiconductor component and process for its production

High electron mobility transistor and method for fabricating the same

Semiconductor device

Nitride semiconductor structure, nitride semiconductor device, and...

Fully strained channel

Method of manufacturing semiconductor element, semiconductor elemen...

Semiconductor device with conformal source/drain layer

Method for manufacturing a semiconductor device using a patterned d...

Nitride-containing STI liner for SiGe channel

Method of forming source/drain epitaxial stacks

Reinforced thin-film device

Field effect transistors with gate electrode self-aligned to semico...

Pixel device on deep trench isolation (DTI) structure for image sensor

Metal-insensitive epitaxy formation

Epitaxial structures exposed in airgaps for semiconductor devices

Regrowth uniformity in GaN vertical devices

Heterogeneous semiconductor device substrates with high quality epi...

Diffusion barrier layer for source and drain structures to increase...

High electron mobility transistor with improved barrier layer

Method for producing an optoelectronic semiconductor chip and optoe...

Process for collectively fabricating a plurality of semiconductor s...

Methods of cooling semiconductor devices

Selective capping processes and structures formed thereby

Conductive C-plane GaN substrate

Graded planar buffer for nanowires

Semiconductor device with multi-layered source/drain regions having...

Patents Applicationslast 30 patents

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...

METHOD FOR MANUFACTURING NANOWIRE, METHOD FOR MANUFACTURING THIN FI...

SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

METHOD OF FORMING EPITAXIAL SEMICONDUCTOR LAYER AND METHOD OF MANUF...

HIGH PERFORMANCE FETS

SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

FULLY STRAINED CHANNEL

GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

REINFORCED THIN-FILM DEVICE

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...

EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES

Method for Forming Mixed Substrate

EPITAXIAL GROWTH METHOD FOR FDSOI HYBRID REGION

TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...

SURFACE MODIFIERS FOR ENHANCED EPITAXIAL NUCLEATION AND WETTING

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...

HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED BARRIER LAYER

CONDUCTIVE C-PLANE GaN SUBSTRATE

Methods of Forming One or More Covered Voids in a Semiconductor Sub...

Confined Growth of 2D Materials and Their Heterostructures

SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Method for Reducing Loss of Dielectric Layer in IO Silicon Oxide Re...