Preparing bulk and homogeneous wafers

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02005Preparing bulk and homogeneous wafers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor wafer and method of manufacturing semiconductor appar...
- Patent number 12,131,966
- Issue date Oct 29, 2024
- Kabushiki Kaisha Toshiba
- Fuyuma Ito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a crack in an edge region of a donor substrate
- Patent number 12,097,641
- Issue date Sep 24, 2024
- Siltectra GmbH
- Marko David Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Group-III element nitride semiconductor substrate
- Patent number 12,057,307
- Issue date Aug 6, 2024
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer for an electronic component and method for the produc...
- Patent number 11,915,922
- Issue date Feb 27, 2024
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus and recording medium
- Patent number 11,876,010
- Issue date Jan 16, 2024
- Kokusai Electric Corporation
- Tadashi Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,559
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,560
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical adjustable filter sub-assembly
- Patent number 11,550,170
- Issue date Jan 10, 2023
- II-VI DELAWARE, INC.
- Li Zhang
- G02 - OPTICS
Information Patent Grant
Semiconductor processing flow field control apparatus and method
- Patent number 11,443,966
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Chin Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer annealing method
- Patent number 11,348,781
- Issue date May 31, 2022
- NEXCHIP SEMICONDUCTOR CO., LTD.
- Yingya Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical adjustable filter sub-assembly
- Patent number 11,194,180
- Issue date Dec 7, 2021
- IL-VI DELAWARE, INC.
- Li Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light assisted platelet formation facilitating layer transfer from...
- Patent number 11,173,697
- Issue date Nov 16, 2021
- GlobalWafers Co., Ltd.
- Gang Wang
- B32 - LAYERED PRODUCTS
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,142,844
- Issue date Oct 12, 2021
- GlobalWafers Co., Ltd.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of carrier for double-side polishing apparatus...
- Patent number 11,065,735
- Issue date Jul 20, 2021
- Shin-Etsu Handotai Co., Ltd.
- Daichi Kitazume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a crack in the edge region of a donor substrate,...
- Patent number 10,994,442
- Issue date May 4, 2021
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon wafer for an electronic component and method for the produc...
- Patent number 10,985,005
- Issue date Apr 20, 2021
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, semiconductor laminate, laminated...
- Patent number 10,978,296
- Issue date Apr 13, 2021
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,777,424
- Issue date Sep 15, 2020
- Kabushiki Kaisha Toshiba
- Takeo Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for guiding a crack in the peripheral region of a donor subs...
- Patent number 10,676,386
- Issue date Jun 9, 2020
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Wafer producing method
- Patent number 10,610,973
- Issue date Apr 7, 2020
- Disco Corporation
- Kazuya Hirata
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Wafer producing method
- Patent number 10,563,321
- Issue date Feb 18, 2020
- Disco Corporation
- Kazuya Hirata
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of fabrication of a semiconductor element comprising a highl...
- Patent number 10,510,531
- Issue date Dec 17, 2019
- Soitec
- Oleg Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compensation of an arc curvature generated in a wafer
- Patent number 10,483,188
- Issue date Nov 19, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Abdenacer Ait-Mani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity based on selective etch for GaN devices and applicatio...
- Patent number 10,458,038
- Issue date Oct 29, 2019
- Yale University
- Yu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for substrate transfer in a thermal treatment...
- Patent number 10,460,922
- Issue date Oct 29, 2019
- Applied Materials, Inc.
- James Hoffman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphite crucible for sublimation growth of SiC crystal
- Patent number 10,435,810
- Issue date Oct 8, 2019
- Dow Silicones Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Formation of epitaxial layers via dislocation filtering
- Patent number 10,388,509
- Issue date Aug 20, 2019
- ASM IP Holding B.V.
- Joe Margetis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer group, wafer manufacturing device, and wafer manufacturing me...
- Patent number 10,319,807
- Issue date Jun 11, 2019
- Dowa Electronics Materials Co., Ltd.
- Shinya Shoji
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Water producing method
- Patent number 10,297,438
- Issue date May 21, 2019
- Disco Corporation
- Kazuya Hirata
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...
- Publication number 20230235479
- Publication date Jul 27, 2023
- Siltronic AG
- Andreas SATTLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EVALUATING PERIPHERAL STRAIN OF WAFER
- Publication number 20230197533
- Publication date Jun 22, 2023
- Shin-Etsu Handotai Co., Ltd.
- Yushi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing or Modifying Silicon Carbide-Containing Articles
- Publication number 20220097256
- Publication date Mar 31, 2022
- PSC Technologies GmbH
- Siegmund GREULICH-WEBER
- C01 - INORGANIC CHEMISTRY
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20220056616
- Publication date Feb 24, 2022
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20210404088
- Publication date Dec 30, 2021
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL ADJUSTABLE FILTER SUB-ASSEMBLY
- Publication number 20210382334
- Publication date Dec 9, 2021
- II-VI Delaware, Inc.
- Li Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER ANNEALING METHOD
- Publication number 20210351029
- Publication date Nov 11, 2021
- NEXCHIP SEMICONDUCTOR CO., LTD.
- YINGYA SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...
- Publication number 20210249252
- Publication date Aug 12, 2021
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESSING FLOW FIELD CONTROL APPARATUS AND METHOD
- Publication number 20210225673
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Chin WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUC...
- Publication number 20210217607
- Publication date Jul 15, 2021
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A CRACK IN AN EDGE REGION OF A DONOR SUBSTRATE
- Publication number 20210213643
- Publication date Jul 15, 2021
- Marko David Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20200216975
- Publication date Jul 9, 2020
- GlobalWafers Co., Ltd
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR POLISHING SILICON CARBIDE SUBSTATE
- Publication number 20200058482
- Publication date Feb 20, 2020
- Fujimi Incorporated
- Kazuma Toujinbara
- B24 - GRINDING POLISHING
Information Patent Application
METHOD FOR GUIDING A CRACK IN THE PERIPHERAL REGION OF A DONOR SUBS...
- Publication number 20190218131
- Publication date Jul 18, 2019
- SILTECTRA GMBH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUC...
- Publication number 20190131121
- Publication date May 2, 2019
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS...
- Publication number 20190047113
- Publication date Feb 14, 2019
- Shin-Etsu Handotai Co., Ltd.
- Daichi KITAZUME
- B24 - GRINDING POLISHING
Information Patent Application
METHOD AND APPARATUS FOR SUBSTRATE TRANSFER IN A THERMAL TREATMENT...
- Publication number 20180337073
- Publication date Nov 22, 2018
- Applied Materials, Inc.
- James HOFFMAN
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Application
WAFER PRODUCING METHOD
- Publication number 20180237947
- Publication date Aug 23, 2018
- Disco Corporation
- Kazuya Hirata
- B24 - GRINDING POLISHING
Information Patent Application
METHOD FOR GUIDING A CRACK IN THE PERIPHERAL REGION OF A DONOR SUBS...
- Publication number 20180185957
- Publication date Jul 5, 2018
- SILTECTRA GMBH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Integrated Atomic Layer Deposition Tool
- Publication number 20180155834
- Publication date Jun 7, 2018
- Applied Materials, Inc.
- Mukund Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMATION OF EPITAXIAL LAYERS VIA DISLOCATION FILTERING
- Publication number 20170372884
- Publication date Dec 28, 2017
- ASM IP HOLDING B.V.
- Joe Margetis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20170358704
- Publication date Dec 14, 2017
- Silicon Genesis Corporation
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRO...
- Publication number 20170352545
- Publication date Dec 7, 2017
- SUMCO CORPORATION
- Ryo HIROSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Defined Oxygen Concentration
- Publication number 20170316929
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL PROCESSING METHOD FOR WAFER
- Publication number 20170256420
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BAKING APPARATUS AND METHOD
- Publication number 20160351423
- Publication date Dec 1, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Ching-Hai YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER PRODUCING METHOD
- Publication number 20160293397
- Publication date Oct 6, 2016
- Disco Corporation
- Kazuya Hirata
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE HOLDING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20160225650
- Publication date Aug 4, 2016
- KABUSHIKI KAISHA TOSHIBA
- Nobuhiro KOMINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER PROCESSING METHOD
- Publication number 20160104643
- Publication date Apr 14, 2016
- Disco Corporation
- Yohei Yamashita
- H01 - BASIC ELECTRIC ELEMENTS

Preparing bulk and homogeneous wafers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor wafer and method of manufacturing semiconductor appar...

Method for forming a crack in an edge region of a donor substrate

Group-III element nitride semiconductor substrate

Silicon wafer for an electronic component and method for the produc...

Substrate processing apparatus and recording medium

Group III nitride substrate, method of making, and method of use

High resistivity single crystal silicon ingot and wafer having impr...

High resistivity single crystal silicon ingot and wafer having impr...

Optical adjustable filter sub-assembly

Semiconductor processing flow field control apparatus and method

Wafer annealing method

Optical adjustable filter sub-assembly

Light assisted platelet formation facilitating layer transfer from...

High resistivity single crystal silicon ingot and wafer having impr...

Manufacturing method of carrier for double-side polishing apparatus...

Method for forming a crack in the edge region of a donor substrate,...

Silicon wafer for an electronic component and method for the produc...

Nitride semiconductor substrate, semiconductor laminate, laminated...

Method for manufacturing semiconductor device

Method for guiding a crack in the peripheral region of a donor subs...

Wafer producing method

Wafer producing method

Method of fabrication of a semiconductor element comprising a highl...

Compensation of an arc curvature generated in a wafer

Conductivity based on selective etch for GaN devices and applicatio...

Method and apparatus for substrate transfer in a thermal treatment...

Graphite crucible for sublimation growth of SiC crystal

Formation of epitaxial layers via dislocation filtering

Wafer group, wafer manufacturing device, and wafer manufacturing me...

Water producing method

Patents Applicationslast 30 patents

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...

METHOD FOR EVALUATING PERIPHERAL STRAIN OF WAFER

Method for Producing or Modifying Silicon Carbide-Containing Articles

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

OPTICAL ADJUSTABLE FILTER SUB-ASSEMBLY

WAFER ANNEALING METHOD

IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...

SEMICONDUCTOR PROCESSING FLOW FIELD CONTROL APPARATUS AND METHOD

SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUC...

METHOD FOR FORMING A CRACK IN AN EDGE REGION OF A DONOR SUBSTRATE

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

METHOD FOR POLISHING SILICON CARBIDE SUBSTATE

METHOD FOR GUIDING A CRACK IN THE PERIPHERAL REGION OF A DONOR SUBS...

SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUC...

MANUFACTURING METHOD OF CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS...

METHOD AND APPARATUS FOR SUBSTRATE TRANSFER IN A THERMAL TREATMENT...

WAFER PRODUCING METHOD

METHOD FOR GUIDING A CRACK IN THE PERIPHERAL REGION OF A DONOR SUBS...

Integrated Atomic Layer Deposition Tool

FORMATION OF EPITAXIAL LAYERS VIA DISLOCATION FILTERING

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRO...

Semiconductor Device Having a Defined Oxygen Concentration

THERMAL PROCESSING METHOD FOR WAFER

BAKING APPARATUS AND METHOD

WAFER PRODUCING METHOD

SUBSTRATE HOLDING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

WAFER PROCESSING METHOD