Patent Grant
10483188
The present invention relates to a method and structure for performing compensation of bow generated in a wafer made from a material, in particular of semiconductor type.
Bow has been defined in the standard ASTM F534, § 3.1.2. As illustrated in
Bow Bw, is the distance between the centre C of the median surface Sm and a reference plane Pref. Reference plane Pref is defined by three points located uniformly around a circle of smaller diameter than the nominal diameter of wafer 1. Bow Bw is positive or negative depending on whether centre C is above or below reference plane Pref.
Bow can be generated when a layer is formed on the wafer at a given temperature, the layer having a much higher, or much lower, coefficient of thermal expansion CTE than that of the wafer at a given temperature. This effect is called bimetal effect.
For non-restrictive example purposes, an envisaged application is epitaxy of GaN on a silicon wafer at 1050° C. for fabrication of light-emitting diodes. When the wafer presents a diameter of 200 mm, the person skilled in the art preferentially seeks to obtain a bow of less than 200 μm in absolute value, A bow of more than 200 μm is liable to give rise to defects, such as cracking or delamination, that are detrimental for the subsequent steps e.g. photolithography, robotized handling of the wafer etc.
To compensate bow, it is known from the state of the art to form two metallic layers (or two dielectric layers) on the front and rear surfaces of the wafer. This method is in particular known for power component transfer applications.
It is also known from the state of the art, in particular from the document JP 2002134451, to form unfilled trenches on the front surface of the wafer to compensate warp of the wafer. The trenches are formed before grinding of the rear surface of the wafer. The trenches define a cutting path of the wafer.
It should be noted that warp differs from the bow defined in the foregoing. Warp has been defined in the ASTM F1390 standard. As illustrated in
A reference plane Pref also exists defined by three points located uniformly around a circle of smaller diameter than the nominal diameter of wafer 1.
Warp Wp is defined by the relation Wp=Dmax,H−Dmax,B where:
Warp Wp is always a positive number in so far as Dmax,B is a negative number by definition and method of calculation.
Such state-of-the-art methods are not entirely satisfactory in so far as they do not ensure a sufficiently small bow of the wafer (for example less than 200 μm in absolute value for a wafer diameter of 200 mm) when formation of a layer is performed at high temperature (for example about 1000° C.).
Accordingly, the object of the present invention is to either wholly or partially remedy the above-mentioned shortcomings, and relates for this purpose to a method for compensating bow generated in a wafer made from a material, the wafer comprising opposite first and second surfaces, the material of the wafer having a coefficient of thermal expansion, called CTE and noted α0; the method comprising the steps of:
a) forming a set of first trenches on the first surface of the wafer;
b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches;
c) filling the first trenches with a first material having a CTE α1;
d) filling the second trenches with a second material having a CTE α2, and verifying α2>α0 or α2<α0 depending on whether the first material verifies α1>α0or α1<α0.
Accordingly, such a method according to the invention enables bow to be compensated by anticipation, i.e. before a step generating the bow, such as formation of a layer on the first surface of the wafer at high temperature.
In order to do this, the first trenches are filled with a first material different from the material of the wafer (α1≠α0), and second trenches are formed at least partially facing the first trenches. The second trenches are advantageously formed totally facing the first trenches, preferentially with a symmetry with respect to the longitudinal median plane of the wafer. The second trenches are filled with a second material that is able to be identical to the first material (α1=α2), The choice of α2 is such that:
α2>α0 if α1>α0,
α2<α0 if α1<α0,
in order to obtain compensation of the bow.
The first material—called filling material—can comprise a set of N layers (N being a natural integer greater than or equal to 2) of different materials filling the first trenches. In this case, the CTE of the first material α1 is calculated in the following manner:
where:
In the same way, the second material—called filling material—can comprise a set of N layers (N being a natural integer greater than or equal to 2) of different materials filling the second trenches. In this case, the CTE of the second material α2 is calculated in the following manner:
where:
Advantageously, the first and second materials respectively occupy a first volume V1 and a second volume V2 inside the first and second trenches on completion of steps c) and d); and step d) is executed such that
In this way, such filling volumes enable compensation of the bow to be improved.
Advantageously, the first and second trenches respectively present a first form factor Φ1 and a second form factor Φ2 during steps a) and b), defined as the ratio between the width and depth of the corresponding trenches; and step b) is executed in such a way that Φ2=Φ1±20%, preferably Φ2=Φ1±15%, more preferentially Φ2=Φ1±10%.
In this way, such form factors enable compensation of the bow to be improved.
Advantageously, step a) is executed in such a way that the first trenches define a cutting path of the wafer, and step b) is preferentially executed in such a way that the second trenches are totally facing the first trenches.
It is thus possible to enhance the cutting path in order to compensate the bow.
Advantageously, the method comprises a step a1) consisting in coating the first trenches with a dielectric layer before step c), the dielectric layer preferentially being an oxide layer.
Such a dielectric layer thus enables the first trenches to be electrically insulated from the wafer.
Advantageously, the method comprises a step b1) consisting in coating the second trenches with a dielectric layer before step d), the dielectric layer preferentially being an oxide layer.
Such a dielectric layer thus enables the second trenches to be electrically insulated from the wafer.
Advantageously, steps a1) and b1) are concomitant.
The operation time of the method is thereby reduced.
Advantageously, step d) is executed in such a way that the second material is identical to the first material, steps c) and d) preferably being concomitant.
Implementation of the method is thus simplified and the operation time is greatly reduced. Steps c) and d) are for example concomitant when the first and second materials are thermal oxides,
Advantageously, the method comprises:
Presence of the first material outside the first trenches is thus avoided, in particular on the first surface of the wafer, in active areas for future components.
Steps c1) and d1) are preferentially performed by chemical mechanical polishing.
Preferentially, the first and second materials are selected from the group comprising polycrystalline silicon, a polyimide, a polyepoxide, an acrylic, an oxide, a nitride, and a glass.
Preferentially, the material of the wafer is selected from the group comprising a semiconductor material, a ceramic, a glass, and sapphire; the semiconductor material preferably being silicon-based.
The present invention also relates to a structure for performing compensation of bow, comprising:
Such a structure according to the invention thereby enables bow to be compensated by anticipation, i.e. before a step generating the bow, such as formation of a layer on the first surface of the wafer at high temperature.
To do this, the first trenches are filled with a first material different from the material of the wafer (α1≠α0) and second trenches are formed at least partially facing the first trenches. The second trenches are advantageously formed totally facing the first trenches, preferentially with an axial symmetry. The second trenches are filled with a second material that is able to be identical to the first material (a1=a2). The choice of α2 is such that:
α2>α0 if α1>α0,
α2<α0 if α1<α0,
in order to obtain compensation of the bow.
The first material—called filling material—can comprise a set of N layers (N being a natural integer greater than or equal to 2) of different materials filling the first trenches. In this case, the CTE of the first material α1 is calculated in the following manner:
where:
In the same way, the second material—called filling material—can comprise a set of N layers (N being a natural integer greater than or equal to 2) of different materials filling the second trenches. In this case, the CTE of the second material α2 is calculated in the following manner:
where:
Advantageously, the first and second materials respectively occupy a first volume V1 and a second volume V2 inside the first and second trenches, and verifying
In this way, such filling volumes enable compensation of the bow to be improved.
Advantageously, the first and second trenches respectively present a first form factor Φ1 and a second form factor Φ2 defined as the ratio between the width and depth of the corresponding trenches; and verifying Φ2=Φ1±20%, preferably Φ2=Φ1±15%, more preferentially Φ2=Φ1±10%.
In this way, such form factors enable compensation of the bow to be improved.
Advantageously, the first trenches are coated with a dielectric layer inserted between the wafer material and the first material; and the second trenches are preferably coated with a dielectric layer inserted between the wafer material and the second material.
Such dielectric layers thus enable the first and second trenches to be electrically insulated from the wafer.
Advantageously, the first material is flush with the first surface; and preferably the second material is flush with the second surface.
Presence of the first material outside the first trenches is thus avoided, in particular on the first surface of the wafer, in active areas for future components.
Other features and advantages will become more clearly apparent from the following description of different embodiments of the invention, given for non-restrictive example purposes, with reference to the appended drawings, in which:
For the different embodiments, the technical features described hereafter are to be considered either alone or in any technically possible combination; the same reference numerals are used for parts that are identical or perform the same function, for the sake of simplification of the description.
Definitions
What is meant by “wafer” is:
What is meant by “semiconductor” is that the material presents an electric conductivity at 300 K comprised between 10−8 S/cm and 103 S/cm.
What is meant by “dielectric” is that the material presents an electric conductivity at 300 K of less than 10−8 S/cm.
What is meant by “longitudinal” is a direction perpendicular to the normal to the first and second surfaces of the wafer.
The method illustrated in
a) forming a set of first trenches 100a, 100b on the first surface 10 of wafer 1;
b) forming a set of second trenches 110 on the second surface 11 of wafer 1, at least partially facing first trenches 100a, 100b;
c) filling first trenches 100a, 100b with a first material M1 having a CTE α1;
d) filling second trenches 110 with a second material M2 having a CTE α2, and verifying α2>α0 or α2<α0 depending on whether first material M1 verifies α1>α0 or α1<α0.
Wafer
The material of wafer 1 is preferentially selected from the group comprising a semiconductor material, a ceramic, a glass, or sapphire. The semiconductor material of wafer 1 is preferentially silicon-based. For example purposes, α0 (Si)=2.5×10−6 K−1 at 300 K. The silicon is advantageously doped so that wafer 1 presents a resistivity of less than 1 ohm.cm, preferentially less than 10−2 ohm.cm.
First trenches
First trenches 100a, 100b preferentially comprise primary first trenches 100a and secondary first trenches 100b. Step a) is advantageously executed in such a way that primary first trenches 100a define a cutting path of wafer 1. Secondary first trenches 100b are advantageously arranged to electrically insulate electronic components 4 from first surface 10 of wafer 1. Primary first trenches 100a are deeper than secondary first trenches 100b. As illustrated in
First material M1 occupies a first volume V1 inside first trenches 100a, 100b on completion of step c), The method advantageously comprises a step c1) consisting in planarizing first material M1 so as to be flush with first surface 10 after step c). Step c1) is preferentially performed by chemical mechanical polishing.
First material M1 is advantageously selected from the group comprising polycrystalline silicon, a polyimide, a polyepoxide, an acrylic, an oxide, a nitride, and a glass.
First trenches 100a, 100b present a first form factor Φ1 in step a). Φ1 is defined as the ratio between the width I1 and depth H1 of the corresponding first trenches 100a, 100b.
The method advantageously comprises a step a1) consisting in coating first trenches 100a, 100b with a dielectric layer 101 before step c). Dielectric layer 101 is preferentially an oxide layer, such as SiO2 when the semiconductor material of wafer 1 is Si-based. The oxide layer is preferentially a thermal oxide. First material M1 can be identical to dielectric layer 101. For example, a (SiO2)=0.6×10−6 K−1 at 300 K. However, for certain applications, first trenches 100a, 100b present a depth H1 comprised between 50 μm and 100 μm; filling of the latter with a thermal oxide would result in a very long operation time and in a low mechanical strength with temperature. It may therefore be preferable to use a different first material M1 from SiO2, such as polycrystalline silicon for certain applications.
Second trenches
Second trenches 110 are formed during step b) preferentially by previously depositing a hard mask 2 and a photoresist 3 on second surface 11 of wafer 1. Then second trenches 110 are formed in step b) by photolithography and etching steps.
Step b) is preferentially executed in such a way that at least one second trench 110 of the set of second trenches 110 is totally facing at least one first trench 100a, 100b. Step b) is advantageously executed in such a way that second trenches 110 are at least partially, preferably totally, facing primary first trenches 100a, as illustrated in
Second material M2 occupies a second volume V2 inside second trenches 110 on completion of step d). The method advantageously comprises a step d1) consisting in planarizing second material M2 so as to be flush with second surface 11 after step d), Step d1) is preferentially performed by chemical mechanical polishing.
Second material M2 is advantageously selected from the group comprising polycrystalline silicon, a polyimide, a polyepoxide, an acrylic, an oxide, a nitride, and a glass. Second material M2 is advantageously identical to first material M1 so that steps c) and d) can be concomitant.
Step d) is advantageously executed in such a way that
Calculation can be performed using Stoney's formula.
Second trenches 110 present a first form factor Φ2 in steps b). Φ2 is defined as the ratio between the width I2 and the depth H2 of the corresponding second trenches 110. Step b) is advantageously executed in such a way that Φ2=Φ1±20%, preferably Φ2=Φ1±15%, more preferentially Φ2=Φ1±10%.
The method advantageously comprises a step b1) consisting in coating second trenches 110 with a dielectric layer 111 before step d). Dielectric layer 111 is preferentially an oxide layer such as SiO2 when the semiconductor material of wafer 1 is Si-based. The oxide layer is preferentially a thermal oxide. When dielectric layers 101, 111 are thermal oxides, steps a1) and b1) are advantageously concomitant. Second material M2 can be identical to dielectric layer 111. For example purposes, α (SiO2)=0.6×10−6 K−1 at 300 K. However, for certain applications, second trenches 110 present a depth H2 comprised between 50 μm and 100 μm; filling of the latter with a thermal oxide would result in a very long operation time and a low mechanical strength with temperature. It may therefore be preferable to use a different second material M2 from SiO2, such as polycrystalline silicon for certain applications.
Simulations enable it to be observed that the parameters (α2, V2, Φ2) defined according to the invention optimize compensation of the bow.
Application Example
On completion of the method according to the invention, it is possible to form components 4, such as light-emitting diodes, on first surface 10 of wafer 1. The light-emitting diodes can be formed by epitaxy of GaN, at a temperature of 1050° C. The light-emitting diodes are then preferentially coated with a protective substrate (or support substrate called handle) assembled on first surface 10 of wafer 1 by bonding. The handle can be temporary or permanent. This results in temporary or permanent bonding. The protective substrate is made from a material preferentially selected from the group comprising a glass, silicon, quartz, and sapphire. More generally, any rigid substrate, transparent in the emission spectrum of the light-emitting diodes, can be suitable for use as protective substrate. Then second surface 11 of wafer 1 is thinned until first trenches 110 are reached. Thinned second surface 11 will then be metallized for the contact connections.
Other applications can naturally be envisaged such as:
| Number | Date | Country | Kind |
|---|---|---|---|
| 15 62359 | Dec 2015 | FR | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/FR2016/053440 | 12/14/2016 | WO | 00 |
| Publishing Document | Publishing Date | Country | Kind |
|---|---|---|---|
| WO2017/103487 | 6/22/2017 | WO | A |
| Number | Name | Date | Kind |
|---|---|---|---|
| 8754505 | Colnat | Jun 2014 | B2 |
| 20070292987 | Yoon et al. | Dec 2007 | A1 |
| 20120018855 | Colnat | Jan 2012 | A1 |
| Number | Date | Country |
|---|---|---|
| S56-140631 | Nov 1981 | JP |
| 2002-134451 | May 2002 | JP |
| 2010102686 | Sep 2010 | WO |
| Entry |
|---|
| Mar. 28, 2017 International Search Report issued in Patent Application No. PCT/FR2016/053440. |
| Number | Date | Country | |
|---|---|---|---|
| 20180366389 A1 | Dec 2018 | US |
