produced by an insulated gate structure

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H01L29/7455

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7455produced by an insulated gate structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Cell structure and its related semiconductor device
- Patent number 12,154,977
- Issue date Nov 26, 2024
- Nanjing Sinnopower Technology Co., Ltd.
- Wenfang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented power diode structure with improved reverse recovery
- Patent number 11,967,638
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifiers in a silicon-on-insulator technology
- Patent number 11,935,946
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for injecting carriers into drift layer for a verti...
- Patent number 11,916,138
- Issue date Feb 27, 2024
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with dopants implanted through gate oxide
- Patent number 11,824,092
- Issue date Nov 21, 2023
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-parallel diode formed using damaged crystal structure in a ver...
- Patent number 11,757,017
- Issue date Sep 12, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor-controlled thyristor device having unifor...
- Patent number 11,637,192
- Issue date Apr 25, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPNP layered MOS-gated trench device having lowered operating voltage
- Patent number 11,610,987
- Issue date Mar 21, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 11,417,759
- Issue date Aug 16, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell layouts for MOS-gated devices for improved forward voltage
- Patent number 11,393,901
- Issue date Jul 19, 2022
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor integrated circuit
- Patent number 11,164,797
- Issue date Nov 2, 2021
- Fuji Electric Co., Ltd.
- Yoshiaki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enclosed gate runner for eliminating miller turn-on
- Patent number 11,127,845
- Issue date Sep 21, 2021
- Delta Electronics, Inc.
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with designated breakdown areas betw...
- Patent number 11,114,552
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field shielding in silicon carbide metal-oxide-semiconduct...
- Patent number 10,937,870
- Issue date Mar 2, 2021
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 10,865,501
- Issue date Dec 15, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancements to cell layout and fabrication techniques for MOS-gate...
- Patent number 10,797,131
- Issue date Oct 6, 2020
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 10,790,373
- Issue date Sep 29, 2020
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate turn-off thyristor with intermediate p+ lay...
- Patent number 10,777,670
- Issue date Sep 15, 2020
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enclosed gate runner for eliminating miller turn-on
- Patent number 10,680,090
- Issue date Jun 9, 2020
- Delta Electronics, Inc.
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bidirectional insulated gate turn-off device
- Patent number 10,600,898
- Issue date Mar 24, 2020
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field shielding in silicon carbide metal-oxide-semiconduct...
- Patent number 10,600,871
- Issue date Mar 24, 2020
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a semiconductor workpiece and semiconductor d...
- Patent number 10,403,725
- Issue date Sep 3, 2019
- Infineon Technologies AG
- Alim Karmous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field shielding in silicon carbide metal-oxide-semiconduct...
- Patent number 10,388,737
- Issue date Aug 20, 2019
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 10,367,089
- Issue date Jul 30, 2019
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated thyristor power device having a rapid turn off time
- Patent number 10,263,533
- Issue date Apr 16, 2019
- David Schie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit with thyristor
- Patent number 10,256,242
- Issue date Apr 9, 2019
- Etron Technology, Inc.
- Li-Ping Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device having low capacitance and low satur...
- Patent number 10,256,331
- Issue date Apr 9, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with hole injector for faster turn off
- Patent number 10,224,404
- Issue date Mar 5, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field shielding in silicon carbide metal-oxide-semiconduct...
- Patent number 10,096,681
- Issue date Oct 9, 2018
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER
- Publication number 20240266422
- Publication date Aug 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR
- Publication number 20240088226
- Publication date Mar 14, 2024
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CONTROLLED RECTIFIERS IN A SILICON-ON-INSULATOR TECHNOLOGY
- Publication number 20230420551
- Publication date Dec 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONS AND METHODS FOR MARKING HYDROCARBON COMPOSITIONS WITH...
- Publication number 20230326968
- Publication date Oct 12, 2023
- United Color Manufacturing, Inc.
- Haresh DOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE
- Publication number 20230087416
- Publication date Mar 23, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NPNP LAYERED MOS-GATED TRENCH DEVICE HAVING LOWERED OPERATING VOLTAGE
- Publication number 20220376095
- Publication date Nov 24, 2022
- PAKAL TECHNOLOGIES, LLC
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL STRUCTURE AND ITS RELATED SEMICONDUCTOR DEVICE
- Publication number 20220367692
- Publication date Nov 17, 2022
- NANJING SINNOPOWER TECHNOLOGY CO., LTD.
- Wenfang DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...
- Publication number 20220344493
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...
- Publication number 20220344498
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented Power Diode Structure with Improved Reverse Recovery
- Publication number 20220181473
- Publication date Jun 9, 2022
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATES WITH DOPANTS IMPLANTED THROUGH GATE OXIDE
- Publication number 20220045168
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR-CONTROLLED THYRISTOR DEVICE HAVING UNIFOR...
- Publication number 20210408265
- Publication date Dec 30, 2021
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL LAYOUTS FOR MOS-GATED DEVICES FOR IMPROVED FORWARD VOLTAGE
- Publication number 20210028279
- Publication date Jan 28, 2021
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...
- Publication number 20200312988
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCT...
- Publication number 20200258985
- Publication date Aug 13, 2020
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...
- Publication number 20190393331
- Publication date Dec 26, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENTS TO CELL LAYOUT AND FABRICATION TECHNIQUES FOR MOS-GATE...
- Publication number 20190312106
- Publication date Oct 10, 2019
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIDIRECTIONAL INSULATED GATE TURN-OFF DEVICE
- Publication number 20190259864
- Publication date Aug 22, 2019
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCLOSED GATE RUNNER FOR ELIMINATING MILLER TURN-ON
- Publication number 20190109221
- Publication date Apr 11, 2019
- Delta Electronics, Inc.
- Wen-Chia LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCLOSED GATE RUNNER FOR ELIMINATING MILLER TURN-ON
- Publication number 20190027593
- Publication date Jan 24, 2019
- Delta Electronics, Inc.
- Wen-Chia LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE HAVING LOW CAPACITANCE AND LOW SATUR...
- Publication number 20180254336
- Publication date Sep 6, 2018
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH HOLE INJECTOR FOR FASTER TURN OFF
- Publication number 20180006120
- Publication date Jan 4, 2018
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCT...
- Publication number 20170338300
- Publication date Nov 23, 2017
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...
- Publication number 20170256614
- Publication date Sep 7, 2017
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Maintaining the State of Semiconductor Memory Having Elec...
- Publication number 20170053919
- Publication date Feb 23, 2017
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20160204240
- Publication date Jul 14, 2016
- ABB TECHNOLOGY AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED THYRISTOR POWER DEVICE
- Publication number 20160133734
- Publication date May 12, 2016
- David Schie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device And Corresponding Module
- Publication number 20150380534
- Publication date Dec 31, 2015
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH TURN-OFF TRANSISTOR
- Publication number 20150349104
- Publication date Dec 3, 2015
- PAKAL TECHNOLOGIES, LLC
- Vladimir Rodov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED THYRISTOR POWER DEVICE
- Publication number 20150016165
- Publication date Jan 15, 2015
- David Schie
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

produced by an insulated gate structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cell structure and its related semiconductor device

Segmented power diode structure with improved reverse recovery

Silicon-controlled rectifiers in a silicon-on-insulator technology

Etch stop layer for injecting carriers into drift layer for a verti...

Insulated trench gates with dopants implanted through gate oxide

MOS(metal oxide silicon) controlled thyristor device

Anti-parallel diode formed using damaged crystal structure in a ver...

Metal oxide semiconductor-controlled thyristor device having unifor...

NPNP layered MOS-gated trench device having lowered operating voltage

Semiconductor device and method for reduced bias threshold instability

Cell layouts for MOS-gated devices for improved forward voltage

Method of manufacturing semiconductor integrated circuit

Enclosed gate runner for eliminating miller turn-on

Insulated gate turn-off device with designated breakdown areas betw...

Electric field shielding in silicon carbide metal-oxide-semiconduct...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Enhancements to cell layout and fabrication techniques for MOS-gate...

Semiconductor device and method of manufacturing same

Vertical insulated gate turn-off thyristor with intermediate p+ lay...

Enclosed gate runner for eliminating miller turn-on

Vertical bidirectional insulated gate turn-off device

Electric field shielding in silicon carbide metal-oxide-semiconduct...

Method for processing a semiconductor workpiece and semiconductor d...

Electric field shielding in silicon carbide metal-oxide-semiconduct...

Semiconductor device and method for reduced bias threshold instability

Gated thyristor power device having a rapid turn off time

Memory circuit with thyristor

Insulated gate turn-off device having low capacitance and low satur...

Insulated gate turn-off device with hole injector for faster turn off

Electric field shielding in silicon carbide metal-oxide-semiconduct...

Patents Applicationslast 30 patents

GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER

INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR

SILICON-CONTROLLED RECTIFIERS IN A SILICON-ON-INSULATOR TECHNOLOGY

COMPOSITIONS AND METHODS FOR MARKING HYDROCARBON COMPOSITIONS WITH...

MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE

NPNP LAYERED MOS-GATED TRENCH DEVICE HAVING LOWERED OPERATING VOLTAGE

CELL STRUCTURE AND ITS RELATED SEMICONDUCTOR DEVICE

ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...

ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...

Segmented Power Diode Structure with Improved Reverse Recovery

INSULATED TRENCH GATES WITH DOPANTS IMPLANTED THROUGH GATE OXIDE

METAL OXIDE SEMICONDUCTOR-CONTROLLED THYRISTOR DEVICE HAVING UNIFOR...

CELL LAYOUTS FOR MOS-GATED DEVICES FOR IMPROVED FORWARD VOLTAGE

INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...

ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCT...

VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...

ENHANCEMENTS TO CELL LAYOUT AND FABRICATION TECHNIQUES FOR MOS-GATE...

VERTICAL BIDIRECTIONAL INSULATED GATE TURN-OFF DEVICE

ENCLOSED GATE RUNNER FOR ELIMINATING MILLER TURN-ON

ENCLOSED GATE RUNNER FOR ELIMINATING MILLER TURN-ON

INSULATED GATE TURN-OFF DEVICE HAVING LOW CAPACITANCE AND LOW SATUR...

INSULATED GATE TURN-OFF DEVICE WITH HOLE INJECTOR FOR FASTER TURN OFF

ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCT...

VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...

Method of Maintaining the State of Semiconductor Memory Having Elec...

POWER SEMICONDUCTOR DEVICE

GATED THYRISTOR POWER DEVICE

Power Semiconductor Device And Corresponding Module

INSULATED GATE TURN-OFF DEVICE WITH TURN-OFF TRANSISTOR

GATED THYRISTOR POWER DEVICE