producing ion implantation

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H01L21/265

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/265producing ion implantation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and fabrication method
- Patent number 12,266,532
- Issue date Apr 1, 2025
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of manufacture
- Patent number 12,266,576
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device with impurity doped o...
- Patent number 12,261,119
- Issue date Mar 25, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Junichi Koezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,205
- Issue date Mar 25, 2025
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field stop IGBT with grown injection region
- Patent number 12,262,553
- Issue date Mar 25, 2025
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanter, ion implantation method, and semiconductor device ma...
- Patent number 12,255,039
- Issue date Mar 18, 2025
- Sumitomo Heavy Industries, Ltd.
- Sayumi Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation method and ion implanter
- Patent number 12,255,046
- Issue date Mar 18, 2025
- Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Yoji Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,249,510
- Issue date Mar 11, 2025
- Fuji Electric Co., Ltd.
- Kazuki Kamimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning gate lengths in multi-gate field effect transistors
- Patent number 12,249,636
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 12,249,630
- Issue date Mar 11, 2025
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal transfer doping method for Fin-like field effect transistor
- Patent number 12,249,640
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 12,243,922
- Issue date Mar 4, 2025
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned semiconductor device contacts having widths less than...
- Patent number 12,243,778
- Issue date Mar 4, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Mitsuru Soma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin end spacer dummy gate and method of m...
- Patent number 12,243,930
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Tai Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,398
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor device and nitride s...
- Patent number 12,237,379
- Issue date Feb 25, 2025
- Fuji Electric Co., Ltd.
- Ryo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with improved strain properties
- Patent number 12,237,414
- Issue date Feb 25, 2025
- Taiwan Semicondcutor Manufacturing Co., Ltd.
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,237,380
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
WBG and UWBG semiconductor with p- and n-type conductivity and proc...
- Patent number 12,237,169
- Issue date Feb 25, 2025
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 12,237,402
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device and method of manufacturing such a device
- Patent number 12,230,628
- Issue date Feb 18, 2025
- STMicroelectronics (Tours) SAS
- Aurelie Arnaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,230,501
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Naoko Kodama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 12,230,674
- Issue date Feb 18, 2025
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming backside power rails
- Patent number 12,224,324
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency transistor amplifiers having self-aligned double im...
- Patent number 12,224,318
- Issue date Feb 11, 2025
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFet fabrication and structure thereof
- Patent number 12,224,210
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 12,224,317
- Issue date Feb 11, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,224,335
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Ching-Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250118560
- Publication date Apr 10, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- LINSHAN YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED FIN WELL
- Publication number 20250120146
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH AN EDGE TERMINATION STRUCTURE AND METHOD
- Publication number 20250113532
- Publication date Apr 3, 2025
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH RECRYSTALLIZED SOURCE/DRAINS AND METHOD
- Publication number 20250113551
- Publication date Apr 3, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping for Superjunction Device
- Publication number 20250113518
- Publication date Apr 3, 2025
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRODE HAVING OPPOSITE TYPE DOPIN...
- Publication number 20250113585
- Publication date Apr 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH LATERALLY DIFFUSED METAL OXIDE SEMIC...
- Publication number 20250113591
- Publication date Apr 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20250113569
- Publication date Apr 3, 2025
- Infineon Technologies Austria AG
- Winfried Kaindl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250107184
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Yen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD SEALING THE AIR GAP
- Publication number 20250105054
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250095993
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Seiya SAKAKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250098246
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Yuichiro SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250098234
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Shunsuke KAMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...
- Publication number 20250098281
- Publication date Mar 20, 2025
- RENESAS ELECTRONICS CORPORATION
- Hirokazu SAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250098290
- Publication date Mar 20, 2025
- NUVOTON TECHNOLOGY CORPORATION
- Vivek NINGARAJU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20250098235
- Publication date Mar 20, 2025
- MICROCHIP TECHNOLOGY INCORPORATED
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING M...
- Publication number 20250095960
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Woo SEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE ENHANCEMENT MODE DEVICE
- Publication number 20250098200
- Publication date Mar 20, 2025
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH CAPACITOR AND FIN TRANSISTOR AND FABRICATING METHOD...
- Publication number 20250089349
- Publication date Mar 13, 2025
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING-GATE TYPE SPLIT-GATE FLASH MEMORY DEVICE AND MANUFACTURING...
- Publication number 20250089247
- Publication date Mar 13, 2025
- Hua Hong Semiconductor (Wuxi) Limited
- Zhaozhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...
- Publication number 20250079170
- Publication date Mar 6, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250079168
- Publication date Mar 6, 2025
- UNITED MICROELECTRONICS CORP.
- Ta-Wei Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES
- Publication number 20250081561
- Publication date Mar 6, 2025
- SOITEC
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250081572
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATED SWITCH WITH EPITAXIAL P-BODY LAYER HAVING HIGHER DOPED...
- Publication number 20250081491
- Publication date Mar 6, 2025
- Pakal Technologies, Inc.
- Vladimir Rodov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Breakdown Resistant Bipolar Transistor
- Publication number 20250081547
- Publication date Mar 6, 2025
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Ram Asra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION REGION OF SUPERJUNCTION DEVICE
- Publication number 20250081516
- Publication date Mar 6, 2025
- NEXPERIA B.V.
- Jianglong Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250081545
- Publication date Mar 6, 2025
- Mitsubishi Electric Corporation
- Masaki SUDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRO...
- Publication number 20250072214
- Publication date Feb 27, 2025
- SONY GROUP CORPORATION
- Hitoshi Tsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON BEAM ANGLE ADJUSTMENT IN AN ION IMPLANTATION SYSTEM
- Publication number 20250062097
- Publication date Feb 20, 2025
- ADVANCED ION BEAM TECHNOLOGY, INC.
- Zhimin WAN
- H01 - BASIC ELECTRIC ELEMENTS

producing ion implantation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and fabrication method

Semiconductor device and methods of manufacture

Method for manufacturing semiconductor device with impurity doped o...

Semiconductor device

Field stop IGBT with grown injection region

Ion implanter, ion implantation method, and semiconductor device ma...

Ion implantation method and ion implanter

Semiconductor device and method of manufacturing semiconductor device

Tuning gate lengths in multi-gate field effect transistors

Method for manufacturing a grid

Conformal transfer doping method for Fin-like field effect transistor

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Self-aligned semiconductor device contacts having widths less than...

Semiconductor device with fin end spacer dummy gate and method of m...

Semiconductor device and method for fabricating the same

Method for manufacturing nitride semiconductor device and nitride s...

Source/drain features with improved strain properties

Semiconductor device and method of forming the same

WBG and UWBG semiconductor with p- and n-type conductivity and proc...

Methods for increasing germanium concentration of surfaces of a sil...

Methods of forming semiconductor devices

Switching device and method of manufacturing such a device

Semiconductor device and method of manufacturing semiconductor device

Radiation hardened high voltage superjunction MOSFET

Manufacturing method of semiconductor device using gate-through imp...

Method of forming backside power rails

Radio frequency transistor amplifiers having self-aligned double im...

Method for FinFet fabrication and structure thereof

Vertical power semiconductor device and manufacturing method

Semiconductor device and fabrication method thereof

Patents Applicationslast 30 patents

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A DOPED FIN WELL

TRANSISTOR DEVICE WITH AN EDGE TERMINATION STRUCTURE AND METHOD

FIELD EFFECT TRANSISTOR WITH RECRYSTALLIZED SOURCE/DRAINS AND METHOD

Doping for Superjunction Device

SEMICONDUCTOR DEVICE WITH GATE ELECTRODE HAVING OPPOSITE TYPE DOPIN...

INTEGRATED CIRCUIT DEVICE WITH LATERALLY DIFFUSED METAL OXIDE SEMIC...

TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD SEALING THE AIR GAP

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...

HIGH-VOLTAGE DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

ION IMPLANTATION APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING M...

GALLIUM NITRIDE ENHANCEMENT MODE DEVICE

STRUCTURE WITH CAPACITOR AND FIN TRANSISTOR AND FABRICATING METHOD...

FLOATING-GATE TYPE SPLIT-GATE FLASH MEMORY DEVICE AND MANUFACTURING...

ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

TRENCH-GATED SWITCH WITH EPITAXIAL P-BODY LAYER HAVING HIGHER DOPED...

High Voltage Breakdown Resistant Bipolar Transistor

EDGE TERMINATION REGION OF SUPERJUNCTION DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRO...

RIBBON BEAM ANGLE ADJUSTMENT IN AN ION IMPLANTATION SYSTEM