Programmable transistors with more than two possible different levels of programmation

Industry

CPC
H01L29/7923

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7923Programmable transistors with more than two possible different levels of programmation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Staggered word line architecture for reduced disturb in 3-dimension...
- Patent number 11,968,837
- Issue date Apr 23, 2024
- SUNRISE MEMORY CORPORATION
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell of non-volatile memory
- Patent number 11,877,456
- Issue date Jan 16, 2024
- eMemory Technology Inc.
- Ying-Je Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,862,245
- Issue date Jan 2, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...
- Patent number 11,810,616
- Issue date Nov 7, 2023
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Staggered word line architecture for reduced disturb in 3-dimension...
- Patent number 11,515,328
- Issue date Nov 29, 2022
- SUNRISE MEMORY CORPORATION
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,488,665
- Issue date Nov 1, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable charge-storage transistor, an array of elevationally-e...
- Patent number 11,424,363
- Issue date Aug 23, 2022
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,393,838
- Issue date Jul 19, 2022
- Renesas Electronics Corporation
- Shibun Tsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile...
- Patent number 11,367,481
- Issue date Jun 21, 2022
- Infineon Technologies LLC
- Venkataraman Prabhakar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Charge trap memory devices
- Patent number 11,367,734
- Issue date Jun 21, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Faraz Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...
- Patent number 11,355,185
- Issue date Jun 7, 2022
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Flash memory device and manufacture thereof
- Patent number 11,276,698
- Issue date Mar 15, 2022
- Semiconductor Manufacturing International (Beijing) Corporation
- Rongyao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays
- Patent number 11,211,503
- Issue date Dec 28, 2021
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Multifunctional memory cells
- Patent number 11,211,124
- Issue date Dec 28, 2021
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-gate thin film transistor memory
- Patent number 11,127,861
- Issue date Sep 21, 2021
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonstoichiometric structures with multiple controlled bandgap energ...
- Patent number 11,120,987
- Issue date Sep 14, 2021
- Nth Tech Corporation
- Michael D. Potter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multifunctional memory cells
- Patent number 11,087,842
- Issue date Aug 10, 2021
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor and memory device using the same
- Patent number 11,081,595
- Issue date Aug 3, 2021
- Macronix International Co., Ltd.
- Cheng-Lin Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing device of the same
- Patent number 11,081,596
- Issue date Aug 3, 2021
- Renesas Electronics Corporation
- Masaru Kadoshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory system, read method, program, and memory controller
- Patent number 11,043,275
- Issue date Jun 22, 2021
- TOSHIBA MEMORY CORPORATION
- Takayuki Itoh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-level cell thin-film transistor memory and method of fabricat...
- Patent number 11,011,534
- Issue date May 18, 2021
- Fudan University
- Shijin Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
Staggered word line architecture for reduced disturb in 3-dimension...
- Patent number 11,011,544
- Issue date May 18, 2021
- SUNRISE MEMORY CORPORATION
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with tunneling materials including lanthanum oxide
- Patent number 10,998,042
- Issue date May 4, 2021
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Multifunctional memory cells
- Patent number 10,957,389
- Issue date Mar 23, 2021
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable charge-storage transistor, an array of elevationally-e...
- Patent number 10,937,904
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 10,868,196
- Issue date Dec 15, 2020
- Powerchip Semiconductor Manufacturing Corporation
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device and fabrication method thereof
- Patent number 10,868,197
- Issue date Dec 15, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor memory device and structure
- Patent number 10,847,540
- Issue date Nov 24, 2020
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,825,520
- Issue date Nov 3, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a memory transistor into High-k, metal gate CMOS pro...
- Patent number 10,784,277
- Issue date Sep 22, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYNAPTIC ELEMENT FOR PERFORMING POLYNOMIAL OPERATION AND ELECTRONIC...
- Publication number 20230335649
- Publication date Oct 19, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- JungWook LIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CAPABLE OF MULTI-LEVEL DRIVING
- Publication number 20230170423
- Publication date Jun 1, 2023
- The Industry & Academic Coorperation in Chungnam National University (IAC)
- Young-Jun YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED WORD LINE ARCHITECTURE FOR REDUCED DISTURB IN 3-DIMENSION...
- Publication number 20230082546
- Publication date Mar 16, 2023
- Sunrise Memory Corporation
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20230045758
- Publication date Feb 9, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
METAL HYBRID CHARGE STORAGE STRUCTURE FOR MEMORY
- Publication number 20220415908
- Publication date Dec 29, 2022
- Intel Corporation
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...
- Publication number 20220359006
- Publication date Nov 10, 2022
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON BASED MULTI-LEVEL NON-VOLATILE...
- Publication number 20220284951
- Publication date Sep 8, 2022
- Infineon Technologies LLC
- Venkatraman Prabhakar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELL OF NON-VOLATILE MEMORY
- Publication number 20220085038
- Publication date Mar 17, 2022
- EMEMORY TECHNOLOGY INC.
- Ying-Je CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON BASED MULTI-LEVEL NON-VOLATILE...
- Publication number 20210350850
- Publication date Nov 11, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Venkataraman Prabhakar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-GATE TRANSISTOR AND MEMORY DEVICE USING THE SAME
- Publication number 20210242347
- Publication date Aug 5, 2021
- Macronix International Co., Ltd.
- Cheng-Lin SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE TRAP MEMORY DEVICES
- Publication number 20210242230
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Faraz KHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Staggered Word Line Architecture for Reduced Disturb in 3-Dimension...
- Publication number 20210225873
- Publication date Jul 22, 2021
- SUNRISE MEMORY CORPORATION
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL MEMORY CELLS
- Publication number 20210225446
- Publication date Jul 22, 2021
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable Charge-Storage Transistor, An Array Of Elevationally-E...
- Publication number 20210184044
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...
- Publication number 20210159346
- Publication date May 27, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONSTOICHIOMETRIC STRUCTURES WITH MULTIPLE CONTROLLED BANDGAP ENERG...
- Publication number 20210104636
- Publication date Apr 8, 2021
- Nth Tech Corporation
- Michael D. Potter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE THIN FILM TRANSISTOR MEMORY
- Publication number 20210066509
- Publication date Mar 4, 2021
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20210050059
- Publication date Feb 18, 2021
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20200373436
- Publication date Nov 26, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Staggered Word Line Architecture for Reduced Disturb in 3-Dimension...
- Publication number 20200335519
- Publication date Oct 22, 2020
- SUNRISE MEMORY CORPORATION
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...
- Publication number 20200303563
- Publication date Sep 24, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200194598
- Publication date Jun 18, 2020
- POWERCHIP TECHNOLOGY CORPORATION
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200185394
- Publication date Jun 11, 2020
- RENESAS ELECTRONICS CORPORATION
- Shibun TSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL MEMORY CELLS
- Publication number 20200152269
- Publication date May 14, 2020
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Level Cell Thin-Film Transistor Memory and Method of Fabricat...
- Publication number 20200119033
- Publication date Apr 16, 2020
- Fudan University
- Shijin DING
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Charge Storage Transistor, an Array of Elevationally-E...
- Publication number 20200052134
- Publication date Feb 13, 2020
- Micron Technology, Inc.
- Fei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...
- Publication number 20200051642
- Publication date Feb 13, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Gary Menezes
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20200035301
- Publication date Jan 30, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM AND ERASE MEMORY STRUCTURES
- Publication number 20200035295
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES INC.
- Faraz KHAN
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE
- Publication number 20200013800
- Publication date Jan 9, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE

Programmable transistors with more than two possible different levels of programmation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Staggered word line architecture for reduced disturb in 3-dimension...

Memory cell of non-volatile memory

Semiconductor memory having both volatile and non-volatile function...

Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...

Staggered word line architecture for reduced disturb in 3-dimension...

Semiconductor memory having both volatile and non-volatile function...

Programmable charge-storage transistor, an array of elevationally-e...

Semiconductor device and manufacturing method thereof

Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile...

Charge trap memory devices

Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...

Flash memory device and manufacture thereof

Memory arrays

Multifunctional memory cells

Multi-gate thin film transistor memory

Nonstoichiometric structures with multiple controlled bandgap energ...

Multifunctional memory cells

Multi-gate transistor and memory device using the same

Semiconductor device and manufacturing device of the same

Memory system, read method, program, and memory controller

Multi-level cell thin-film transistor memory and method of fabricat...

Staggered word line architecture for reduced disturb in 3-dimension...

Memory cells with tunneling materials including lanthanum oxide

Multifunctional memory cells

Programmable charge-storage transistor, an array of elevationally-e...

Memory device and manufacturing method thereof

Structure of memory device and fabrication method thereof

3D semiconductor memory device and structure

Semiconductor memory having both volatile and non-volatile function...

Integration of a memory transistor into High-k, metal gate CMOS pro...

Patents Applicationslast 30 patents

SYNAPTIC ELEMENT FOR PERFORMING POLYNOMIAL OPERATION AND ELECTRONIC...

MEMORY DEVICE CAPABLE OF MULTI-LEVEL DRIVING

STAGGERED WORD LINE ARCHITECTURE FOR REDUCED DISTURB IN 3-DIMENSION...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

METAL HYBRID CHARGE STORAGE STRUCTURE FOR MEMORY

SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...

SILICON-OXIDE-NITRIDE-OXIDE-SILICON BASED MULTI-LEVEL NON-VOLATILE...

MEMORY CELL OF NON-VOLATILE MEMORY

SILICON-OXIDE-NITRIDE-OXIDE-SILICON BASED MULTI-LEVEL NON-VOLATILE...

MULTI-GATE TRANSISTOR AND MEMORY DEVICE USING THE SAME

CHARGE TRAP MEMORY DEVICES

Staggered Word Line Architecture for Reduced Disturb in 3-Dimension...

MULTIFUNCTIONAL MEMORY CELLS

Programmable Charge-Storage Transistor, An Array Of Elevationally-E...

SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...

NONSTOICHIOMETRIC STRUCTURES WITH MULTIPLE CONTROLLED BANDGAP ENERG...

MULTI-GATE THIN FILM TRANSISTOR MEMORY

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF

Staggered Word Line Architecture for Reduced Disturb in 3-Dimension...

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MULTIFUNCTIONAL MEMORY CELLS

Multi-Level Cell Thin-Film Transistor Memory and Method of Fabricat...

Programmable Charge Storage Transistor, an Array of Elevationally-E...

BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

PROGRAM AND ERASE MEMORY STRUCTURES

3D SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE