Programmable transistors

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H01L29/803

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/803Programmable transistors

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Patents Grantslast 30 patents

Information Patent Grant
Electronic memory devices
- Patent number 10,243,086
- Issue date Mar 26, 2019
- LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED
- Manus Hayne
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhancement mode III-nitride transistor
- Patent number 9,530,877
- Issue date Dec 27, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell
- Patent number 9,424,925
- Issue date Aug 23, 2016
- Technische Universitat Berlin
- Andreas Marent
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable gate III-nitride power transistor
- Patent number 9,236,462
- Issue date Jan 12, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable III-nitride transistor with aluminum-doped gate
- Patent number 9,105,703
- Issue date Aug 11, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride transistors
- Patent number 9,099,382
- Issue date Aug 4, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable III-nitride semiconductor device
- Patent number 8,729,644
- Issue date May 20, 2014
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride transistors with single gate Dielectri...
- Patent number 8,482,035
- Issue date Jul 9, 2013
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable gate III-nitride semiconductor device
- Patent number 8,455,922
- Issue date Jun 4, 2013
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing carrier injection velocity for integrated circuit devices
- Patent number 8,440,998
- Issue date May 14, 2013
- Intel Corporation
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory
- Patent number 8,331,142
- Issue date Dec 11, 2012
- Technische Universitat Berlin
- Dieter Bimberg
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanostructured memory device
- Patent number 8,212,237
- Issue date Jul 3, 2012
- QuNano AB
- Lars Samuelson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Normally off III-nitride semiconductor device having a programmable...
- Patent number 8,183,595
- Issue date May 22, 2012
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MEMFET RAM
- Patent number 8,120,071
- Issue date Feb 21, 2012
- Hewlett-Packard Development Company, L.P.
- Alexandre M. Bratkovski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power semiconductor device having a programmable gate
- Patent number 8,084,785
- Issue date Dec 27, 2011
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for manufacturing same
- Patent number 7,622,763
- Issue date Nov 24, 2009
- Japan Science and Technology Agency
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor memory device having quantum well buried i...
- Patent number 6,724,660
- Issue date Apr 20, 2004
- STMicroelectronics S.A.
- Thomas Skotnicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,720,589
- Issue date Apr 13, 2004
- Kabushiki Kaisha Toshiba
- Andrew James Shields
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 6,459,120
- Issue date Oct 1, 2002
- Fujitsu Limited
- Masashi Shima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory device and memory array
- Patent number 6,133,603
- Issue date Oct 17, 2000
- Sony Corporation
- Kazumasa Nomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum device
- Patent number 6,080,995
- Issue date Jun 27, 2000
- Sony Corporation
- Kazumasa Nomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND or NOR compound semiconductor memory
- Patent number 6,025,612
- Issue date Feb 15, 2000
- NEC Corporation
- Hikaru Hida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor memory with floating gate
- Patent number 6,023,079
- Issue date Feb 8, 2000
- NEC Corporation
- Hikaru Hida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterojunction floating layer memory device and metho...
- Patent number 5,432,356
- Issue date Jul 11, 1995
- Fujitsu Limited
- Kenichi Imamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory having three dimension charge conf...
- Patent number 5,055,890
- Issue date Oct 8, 1991
- The United States of America as represented by the United States Department o...
- L. Ralph Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory circuit and apparatus
- Patent number 4,945,393
- Issue date Jul 31, 1990
- AT&T Bell Laboratories
- Fabio Beltram
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating gate memories
- Patent number 4,905,063
- Issue date Feb 27, 1990
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Fabio Beltram
- G11 - INFORMATION STORAGE
Information Patent Grant
Real space electron transfer device using hot electron injection
- Patent number 4,903,092
- Issue date Feb 20, 1990
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Sergey Luryi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET with Fermi level pinning between channel and heavily doped semi...
- Patent number 4,698,652
- Issue date Oct 6, 1987
- Hitachi, Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Electronic Memory Devices
- Publication number 20170352767
- Publication date Dec 7, 2017
- LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED
- Manus Hayne
- G11 - INFORMATION STORAGE
Information Patent Application
Enhancement Mode III-Nitride Transistors with Single Gate Dielectri...
- Publication number 20130292694
- Publication date Nov 7, 2013
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable Gate III-Nitride Semiconductor Device
- Publication number 20130256694
- Publication date Oct 3, 2013
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING CARRIER INJECTION VELOCITY FOR INTEGRATED CIRCUIT DEVICES
- Publication number 20130240838
- Publication date Sep 19, 2013
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY
Information Patent Application
Programmable Gate III-Nitride Semiconductor Device
- Publication number 20120223327
- Publication date Sep 6, 2012
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY
- Publication number 20120155165
- Publication date Jun 21, 2012
- TECHNISCHE UNIVERSITAT BERLIN
- Dieter BIMBERG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Programmable Gate III-Nitride Power Transistor
- Publication number 20120091470
- Publication date Apr 19, 2012
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable III-Nitride Transistor with Aluminum-Doped Gate
- Publication number 20110227090
- Publication date Sep 22, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMFET RAM
- Publication number 20110169052
- Publication date Jul 14, 2011
- Alexandre M. Bratkovski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING CARRIER INJECTION VELOCITY FOR INTEGRATED CIRCUIT DEVICES
- Publication number 20110147708
- Publication date Jun 23, 2011
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOSTRUCTURED MEMORY DEVICE
- Publication number 20110140086
- Publication date Jun 16, 2011
- QuNano AB
- Lars Samuelson
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhancement Mode III-Nitride Transistors with Single Gate Dielectri...
- Publication number 20110121313
- Publication date May 26, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE POWER SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE GATE
- Publication number 20080087917
- Publication date Apr 17, 2008
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III-NITRIDE SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE...
- Publication number 20070026587
- Publication date Feb 1, 2007
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and method for manufacturing same
- Publication number 20060194379
- Publication date Aug 31, 2006
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated semiconductor memory device
- Publication number 20020097608
- Publication date Jul 25, 2002
- STMicroelectronics S.A.
- Thomas Skotnicki
- H01 - BASIC ELECTRIC ELEMENTS

Programmable transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic memory devices

Enhancement mode III-nitride transistor

Memory cell

Programmable gate III-nitride power transistor

Programmable III-nitride transistor with aluminum-doped gate

Enhancement mode III-nitride transistors

Programmable III-nitride semiconductor device

Enhancement mode III-nitride transistors with single gate Dielectri...

Programmable gate III-nitride semiconductor device

Increasing carrier injection velocity for integrated circuit devices

Memory

Nanostructured memory device

Normally off III-nitride semiconductor device having a programmable...

MEMFET RAM

III-nitride power semiconductor device having a programmable gate

Field effect transistor and method for manufacturing same

Integrated semiconductor memory device having quantum well buried i...

Semiconductor device

Semiconductor device and manufacturing method of the same

Memory device and memory array

Quantum device

NAND or NOR compound semiconductor memory

Compound semiconductor memory with floating gate

Semiconductor heterojunction floating layer memory device and metho...

Nonvolatile semiconductor memory having three dimension charge conf...

Floating gate memory circuit and apparatus

Floating gate memories

Real space electron transfer device using hot electron injection

FET with Fermi level pinning between channel and heavily doped semi...

Patents Applicationslast 30 patents

Electronic Memory Devices

Enhancement Mode III-Nitride Transistors with Single Gate Dielectri...

Programmable Gate III-Nitride Semiconductor Device

INCREASING CARRIER INJECTION VELOCITY FOR INTEGRATED CIRCUIT DEVICES

Programmable Gate III-Nitride Semiconductor Device

MEMORY

Programmable Gate III-Nitride Power Transistor

Programmable III-Nitride Transistor with Aluminum-Doped Gate

MEMFET RAM

INCREASING CARRIER INJECTION VELOCITY FOR INTEGRATED CIRCUIT DEVICES

NANOSTRUCTURED MEMORY DEVICE

Enhancement Mode III-Nitride Transistors with Single Gate Dielectri...

III-NITRIDE POWER SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE GATE

NORMALLY OFF III-NITRIDE SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE...

Field effect transistor and method for manufacturing same

Integrated semiconductor memory device