recessing the gate by forming single crystalline semiconductor material at the source or drain location

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CPC
H01L29/66628

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66628recessing the gate by forming single crystalline semiconductor material at the source or drain location

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for creating ohmic contacts using bismuth
- Patent number 11,935,938
- Issue date Mar 19, 2024
- Massachusetts Institute of Technology
- Pin-Chun Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure and method of making
- Patent number 11,923,200
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices and systems, and methods for making and using th...
- Patent number 11,887,895
- Issue date Jan 30, 2024
- United Semiconductor Japan Co., Ltd.
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device, and semiconductor device
- Patent number RE49803
- Issue date Jan 16, 2024
- Sony Group Corporation
- Yuki Miyanami
Information Patent Grant
Image pickup device and method of tracking subject thereof
- Patent number 11,860,511
- Issue date Jan 2, 2024
- MAXELL, LTD.
- Hiroshi Shimizu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Device with a recessed gate electrode that has high thickness unifo...
- Patent number 11,846,871
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Reduced local threshold voltage variation MOSFET using multiple lay...
- Patent number 11,757,002
- Issue date Sep 12, 2023
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping profile for strained source/drain region
- Patent number 11,749,752
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,728,429
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant concentration boost in epitaxially formed material
- Patent number 11,721,760
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dose implantation for ultrathin semiconductor-on-insulator sub...
- Patent number 11,699,757
- Issue date Jul 11, 2023
- STMicroelectronics, Inc.
- Jocelyne Gimbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,695,012
- Issue date Jul 4, 2023
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cap element
- Patent number 11,688,769
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shing-Huang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,664,218
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Ting Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy bordering isolation structure
- Patent number 11,658,032
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,658,211
- Issue date May 23, 2023
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,631,750
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,581,422
- Issue date Feb 14, 2023
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,527,638
- Issue date Dec 13, 2022
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with protection layer and conductor extendi...
- Patent number 11,522,061
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Column IV transistors for PMOS integration
- Patent number 11,508,813
- Issue date Nov 22, 2022
- Daedalus Prime LLC
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain-extended transistor
- Patent number 11,456,381
- Issue date Sep 27, 2022
- Texas Instruments Incorporated
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a recessed gate electrode that has high thickness unifo...
- Patent number 11,445,104
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having tipless epitaxial source/drain regions
- Patent number 11,437,514
- Issue date Sep 6, 2022
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for data collection and exchange with protected m...
- Patent number 11,417,663
- Issue date Aug 16, 2022
- MO-DV, Inc.
- Martin Boliek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN heterojunction bipolar transistor in CMOS flow
- Patent number 11,417,646
- Issue date Aug 16, 2022
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with strained source/drain structures and method of forming...
- Patent number 11,411,098
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having epitaxy regions with reduced facets
- Patent number 11,411,109
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high concentration of germanium
- Patent number 11,387,320
- Issue date Jul 12, 2022
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IMAGE PICKUP DEVICE AND METHOD OF TRACKING SUBJECT THEREOF
- Publication number 20240069412
- Publication date Feb 29, 2024
- Maxell, Ltd.
- Hiroshi SHIMIZU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...
- Publication number 20240061320
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Dopant Concentration Boost in Epitaxially Formed Material
- Publication number 20240014321
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR O...
- Publication number 20230387260
- Publication date Nov 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
- Publication number 20230369491
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOSE IMPLANTATION FOR ULTRATHIN SEMICONDUCTOR-ON-INSULATOR SUB...
- Publication number 20230299202
- Publication date Sep 21, 2023
- STMicroelectronics, Inc.
- JOCELYNE GIMBERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING
- Publication number 20230298891
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230282647
- Publication date Sep 7, 2023
- RENESAS ELECTRONICS CORPORATION
- Takaaki TSUNOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAP ELEMENT
- Publication number 20230275126
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shing-Huang WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230253456
- Publication date Aug 10, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230143927
- Publication date May 11, 2023
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230066954
- Publication date Mar 2, 2023
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20220359753
- Publication date Nov 10, 2022
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20220352346
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei KWOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...
- Publication number 20220353430
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING
- Publication number 20220285157
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...
- Publication number 20220271125
- Publication date Aug 25, 2022
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220208993
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIANG-BAU WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-EXTENDED TRANSISTOR
- Publication number 20220190158
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220102555
- Publication date Mar 31, 2022
- Samsung Electronics Co., Ltd.
- Yul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE/NANOSTRUCTURE FET WITH SELF-ALIGNED CONTACT AND GATE
- Publication number 20220093772
- Publication date Mar 24, 2022
- International Business Machines Corporation
- Josephine Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONCENTRATION CAPPIN...
- Publication number 20210407851
- Publication date Dec 30, 2021
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR CREATING OHMIC CONTACTS USING BISMUTH
- Publication number 20210359099
- Publication date Nov 18, 2021
- Massachusetts Institute of Technology
- Pin-Chun Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Shaped Epitaxial Region
- Publication number 20210351298
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES AND SYSTEMS, AND METHODS FOR MAKING AND USING TH...
- Publication number 20210313231
- Publication date Oct 7, 2021
- United Semiconductor Japan Co., Ltd.
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210296112
- Publication date Sep 23, 2021
- National Taiwan University
- Sheng-Ting Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Local Threshold Voltage Variation MOSFET Using Multiple Lay...
- Publication number 20210257456
- Publication date Aug 19, 2021
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20210257459
- Publication date Aug 19, 2021
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Epitaxy Bordering Isolation Structure
- Publication number 20210210350
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Epitaxy Regions with Reduced Facets
- Publication number 20210184037
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS

recessing the gate by forming single crystalline semiconductor material at the source or drain location

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including an epitaxy region

Devices and methods for creating ohmic contacts using bismuth

Integrated circuits having source/drain structure and method of making

Electronic devices and systems, and methods for making and using th...

Method of manufacturing semiconductor device, and semiconductor device

Image pickup device and method of tracking subject thereof

Device with a recessed gate electrode that has high thickness unifo...

Reduced local threshold voltage variation MOSFET using multiple lay...

Doping profile for strained source/drain region

Method of fabricating semiconductor device

Dopant concentration boost in epitaxially formed material

High dose implantation for ultrathin semiconductor-on-insulator sub...

Semiconductor device and manufacturing method of the same

Semiconductor device with cap element

Semiconductor device and method

Semiconductor epitaxy bordering isolation structure

Semiconductor device and manufacturing method of the same

Semiconductor structure and manufacturing method thereof

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor structure with protection layer and conductor extendi...

Column IV transistors for PMOS integration

Drain-extended transistor

Device with a recessed gate electrode that has high thickness unifo...

Semiconductor device having tipless epitaxial source/drain regions

System and method for data collection and exchange with protected m...

NPN heterojunction bipolar transistor in CMOS flow

Devices with strained source/drain structures and method of forming...

MOS devices having epitaxy regions with reduced facets

Transistors with high concentration of germanium

Patents Applicationslast 30 patents

IMAGE PICKUP DEVICE AND METHOD OF TRACKING SUBJECT THEREOF

DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...

Dopant Concentration Boost in Epitaxially Formed Material

SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR O...

DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION

HIGH DOSE IMPLANTATION FOR ULTRATHIN SEMICONDUCTOR-ON-INSULATOR SUB...

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH CAP ELEMENT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

METHOD OF FORMING DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES

DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFO...

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

DRAIN-EXTENDED TRANSISTOR

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

GRAPHENE/NANOSTRUCTURE FET WITH SELF-ALIGNED CONTACT AND GATE

SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONCENTRATION CAPPIN...

DEVICES AND METHODS FOR CREATING OHMIC CONTACTS USING BISMUTH

Semiconductor Device Having a Shaped Epitaxial Region

ELECTRONIC DEVICES AND SYSTEMS, AND METHODS FOR MAKING AND USING TH...

Semiconductor Device and Method

Reduced Local Threshold Voltage Variation MOSFET Using Multiple Lay...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Semiconductor Epitaxy Bordering Isolation Structure

MOS Devices Having Epitaxy Regions with Reduced Facets