Reduced surface field [RESURF] pn-junction structures

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H01L29/063

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/063Reduced surface field [RESURF] pn-junction structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 12,261,058
- Issue date Mar 25, 2025
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,255,228
- Issue date Mar 18, 2025
- Fuji Electric Co., Ltd.
- Masanobu Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and apparatus for controlled ion implantation
- Patent number 12,247,283
- Issue date Mar 11, 2025
- Applied Materials, Inc.
- Alexander K. Eidukonis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Double-diffused metal-oxide-semiconductor transistor including a re...
- Patent number 12,249,646
- Issue date Mar 11, 2025
- ALLEGRO MICROSYSTEMS, LLC
- Thomas S. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with overlapping electric fiel...
- Patent number 12,243,910
- Issue date Mar 4, 2025
- Denso Corporation
- Shinichirou Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction MOSFET device
- Patent number 12,230,672
- Issue date Feb 18, 2025
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Tian Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of manufacturing of a semiconduct...
- Patent number 12,230,708
- Issue date Feb 18, 2025
- Nexperia B.V.
- Kilian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 12,230,674
- Issue date Feb 18, 2025
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFETs with improved trench terminations and...
- Patent number 12,230,705
- Issue date Feb 18, 2025
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with gate-source ESD diode structure
- Patent number 12,224,311
- Issue date Feb 11, 2025
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 12,224,317
- Issue date Feb 11, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,345
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
False collectors and guard rings for semiconductor devices
- Patent number 12,218,190
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method of manufacturing semiconductor device
- Patent number 12,205,993
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Hiroki Wakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell structure of silicon carbide MOSFET device, and power semicond...
- Patent number 12,205,991
- Issue date Jan 21, 2025
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage edge termination structure for power semiconductor dev...
- Patent number 12,199,153
- Issue date Jan 14, 2025
- TAIWAN SEMICONDUCTOR CO., LTD.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 12,199,180
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method thereof
- Patent number 12,191,387
- Issue date Jan 7, 2025
- SK keyfoundry Inc.
- Hanseob Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 12,183,639
- Issue date Dec 31, 2024
- SK keyfoundry Inc.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including stopper layer and electronic system...
- Patent number 12,176,389
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Hyemi Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and semiconductor device
- Patent number 12,176,430
- Issue date Dec 24, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a power MOSFET with gate-source ESD diode...
- Patent number 12,170,311
- Issue date Dec 17, 2024
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction silicon carbide semiconductor device and manufacturi...
- Patent number 12,170,312
- Issue date Dec 17, 2024
- Fuji Electric Co., Ltd.
- Kensuke Takenaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,166,125
- Issue date Dec 10, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a semiconductor layer within a trench a...
- Patent number 12,166,068
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Ralph N. Wall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with equipotential ring electrode
- Patent number 12,159,865
- Issue date Dec 3, 2024
- Rohm Co., Ltd.
- Hiroyuki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor cell and power transistor having field shielding c...
- Patent number 12,159,900
- Issue date Dec 3, 2024
- Robert Bosch GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a power MOSFET with gate-source ESD diode...
- Patent number 12,154,942
- Issue date Nov 26, 2024
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING STOPPER LAYER AND ELECTRONIC SYSTEM...
- Publication number 20250072064
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Hyemi LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES
- Publication number 20250063774
- Publication date Feb 20, 2025
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...
- Publication number 20250040197
- Publication date Jan 30, 2025
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031397
- Publication date Jan 23, 2025
- Sanken Electric Co., Ltd
- Ryo SOMEYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031406
- Publication date Jan 23, 2025
- SK keyfoundry Inc.
- Hanseob CHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022917
- Publication date Jan 16, 2025
- Hyundai Motor Company
- NackYong JOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015175
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yoshinori KAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20250006785
- Publication date Jan 2, 2025
- Hitachi Energy Ltd
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT
- Publication number 20250006727
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS
- Publication number 20240429272
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-BALANCE POWER DEVICE, AND PROCESS FOR MANUFACTURING THE CHAR...
- Publication number 20240429273
- Publication date Dec 26, 2024
- STMicroelectronics S.r.l.
- Antonello SANTANGELO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421197
- Publication date Dec 19, 2024
- Fuji Electric Co., Ltd.
- Takahide TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20240420992
- Publication date Dec 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
- Publication number 20240413197
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405067
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...
- Publication number 20240405084
- Publication date Dec 5, 2024
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405068
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240405121
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Chia-Ming Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE
- Publication number 20240395804
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE
- Publication number 20240395805
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS
- Publication number 20240387620
- Publication date Nov 21, 2024
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Gate-All-Around Device
- Publication number 20240387638
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE BALANCE SEMICONDUCTOR DEVICE, IN PARTICULAR FOR HIGH EFFICIE...
- Publication number 20240379742
- Publication date Nov 14, 2024
- STMicroelectronics S.r.l.
- Antonino SCHILLACI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...
- Publication number 20240379824
- Publication date Nov 14, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...
- Publication number 20240371928
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240372012
- Publication date Nov 7, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS

Reduced surface field [RESURF] pn-junction structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor device, method of manufacturing the same and electron...

Method and apparatus for controlled ion implantation

Double-diffused metal-oxide-semiconductor transistor including a re...

Silicon carbide semiconductor device with overlapping electric fiel...

Super junction MOSFET device

Semiconductor device and a method of manufacturing of a semiconduct...

Radiation hardened high voltage superjunction MOSFET

Shielded gate trench MOSFETs with improved trench terminations and...

Power MOSFET with gate-source ESD diode structure

Vertical power semiconductor device and manufacturing method

Semiconductor device

False collectors and guard rings for semiconductor devices

Semiconductor device, and method of manufacturing semiconductor device

Cell structure of silicon carbide MOSFET device, and power semicond...

LDMOS with polysilicon deep drain

High voltage edge termination structure for power semiconductor dev...

Semiconductor device including a superlattice and an asymmetric cha...

High voltage semiconductor device and manufacturing method thereof

Semiconductor device having deep trench structure and method of man...

Semiconductor device including stopper layer and electronic system...

Semiconductor structure and semiconductor device

Manufacturing method for a power MOSFET with gate-source ESD diode...

Super junction silicon carbide semiconductor device and manufacturi...

Semiconductor structure and method for forming the same

Electronic device including a semiconductor layer within a trench a...

Semiconductor device with equipotential ring electrode

Power transistor cell and power transistor having field shielding c...

Manufacturing method for a power MOSFET with gate-source ESD diode...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING STOPPER LAYER AND ELECTRONIC SYSTEM...

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...

SEMICONDUCTOR DEVICE

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT

SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS

CHARGE-BALANCE POWER DEVICE, AND PROCESS FOR MANUFACTURING THE CHAR...

SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...

Semiconductor Device with Compensation Structure

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

POWER SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE

MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS

Semiconductor Gate-All-Around Device

CHARGE BALANCE SEMICONDUCTOR DEVICE, IN PARTICULAR FOR HIGH EFFICIE...

METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...

METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DEVICE