Self-converging multilevel programming

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CPC
G11C2211/5625

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C2211/5625Self-converging multilevel programming

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Patents Grantslast 30 patents

Information Patent Grant
Adjustment of program verify targets corresponding to a last progra...
- Patent number 12,040,026
- Issue date Jul 16, 2024
- Micron Technology, Inc.
- Bruce A. Liikanen
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic programming of valley margins
- Patent number 11,373,712
- Issue date Jun 28, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Dragging first pass read level thresholds based on changes in secon...
- Patent number 11,309,020
- Issue date Apr 19, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjustment of program verify targets corresponding to a last progra...
- Patent number 11,189,352
- Issue date Nov 30, 2021
- Micron Technology, Inc.
- Bruce A. Liikanen
- G11 - INFORMATION STORAGE
Information Patent Grant
Dragging first pass read level thresholds based on changes in secon...
- Patent number 10,885,975
- Issue date Jan 5, 2021
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating the same
- Patent number 10,846,236
- Issue date Nov 24, 2020
- SK hynix Inc.
- Jung Hwan Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic programing of valley margins of a memory cell
- Patent number 10,748,625
- Issue date Aug 18, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Control logic, semiconductor memory device, and method of operating...
- Patent number 10,340,012
- Issue date Jul 2, 2019
- SK hynix Inc.
- Jung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Auto low current programming method without verify
- Patent number 9,514,806
- Issue date Dec 6, 2016
- Integrated Silicon Solution, Inc.
- Sung Jin Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including variable resistance elements and me...
- Patent number 9,001,551
- Issue date Apr 7, 2015
- Samsung Electronics Co., Ltd.
- Man Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multilevel memory cell programming
- Patent number 7,944,757
- Issue date May 17, 2011
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multilevel memory cell programming
- Patent number 7,692,971
- Issue date Apr 6, 2010
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memory cell device and method for self-converged progra...
- Patent number 6,215,697
- Issue date Apr 10, 2001
- Macronix International Co., Ltd.
- Tao Cheng Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming a memory cell to contain multiple values
- Patent number 5,831,901
- Issue date Nov 3, 1998
- Advanced Micro Devices, Inc.
- Yuan Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-convergent method for programming FLASH and EEPROM memory cell...
- Patent number 5,808,937
- Issue date Sep 15, 1998
- National Semiconductor Corporation
- Min-Hwa Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming flash memory using predictive learning methods
- Patent number 5,729,489
- Issue date Mar 17, 1998
- Intel Corporation
- Albert Fazio
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming a single EPROM or flash memory cell to store...
- Patent number 5,594,685
- Issue date Jan 14, 1997
- National Semiconductor Corporation
- Albert Bergemont
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRA...
- Publication number 20240331780
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Bruce A. Liikanen
- G11 - INFORMATION STORAGE
Information Patent Application
ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRA...
- Publication number 20220044742
- Publication date Feb 10, 2022
- Micron Technology, Inc.
- Bruce A. Liikanen
- G11 - INFORMATION STORAGE
Information Patent Application
DRAGGING FIRST PASS READ LEVEL THRESHOLDS BASED ON CHANGES IN SECON...
- Publication number 20210183439
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC PROGRAMMING OF VALLEY MARGINS
- Publication number 20200372962
- Publication date Nov 26, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
DRAGGING FIRST PASS READ LEVEL THRESHOLDS BASED ON CHANGES IN SECON...
- Publication number 20200286551
- Publication date Sep 10, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC PROGRAMING OF VALLEY MARGINS OF A MEMORY CELL
- Publication number 20200286568
- Publication date Sep 10, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRA...
- Publication number 20200286567
- Publication date Sep 10, 2020
- Micron Technology, Inc.
- Bruce A. Liikanen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE ELEMENTS AND ME...
- Publication number 20130058153
- Publication date Mar 7, 2013
- Samsung Electronics Co., Ltd.
- Man Chang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTILEVEL MEMORY CELL PROGRAMMING
- Publication number 20100165739
- Publication date Jul 1, 2010
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTILEVEL MEMORY CELL PROGRAMMING
- Publication number 20080239806
- Publication date Oct 2, 2008
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE

Self-converging multilevel programming

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Adjustment of program verify targets corresponding to a last progra...

Dynamic programming of valley margins

Dragging first pass read level thresholds based on changes in secon...

Adjustment of program verify targets corresponding to a last progra...

Dragging first pass read level thresholds based on changes in secon...

Memory device and method of operating the same

Dynamic programing of valley margins of a memory cell

Control logic, semiconductor memory device, and method of operating...

Auto low current programming method without verify

Semiconductor devices including variable resistance elements and me...

Non-volatile multilevel memory cell programming

Non-volatile multilevel memory cell programming

Multi-level memory cell device and method for self-converged progra...

Method of programming a memory cell to contain multiple values

Self-convergent method for programming FLASH and EEPROM memory cell...

Programming flash memory using predictive learning methods

Method for programming a single EPROM or flash memory cell to store...

Patents Applicationslast 30 patents

ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRA...

ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRA...

DRAGGING FIRST PASS READ LEVEL THRESHOLDS BASED ON CHANGES IN SECON...

DYNAMIC PROGRAMMING OF VALLEY MARGINS

DRAGGING FIRST PASS READ LEVEL THRESHOLDS BASED ON CHANGES IN SECON...

DYNAMIC PROGRAMING OF VALLEY MARGINS OF A MEMORY CELL

ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRA...

SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE ELEMENTS AND ME...

NON-VOLATILE MULTILEVEL MEMORY CELL PROGRAMMING

NON-VOLATILE MULTILEVEL MEMORY CELL PROGRAMMING