Silicon carbide

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CPC
H01L21/02378

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02378Silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,205,990
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Takafumi Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC composite substrate and composite substrate for semiconductor d...
- Patent number 12,183,792
- Issue date Dec 31, 2024
- NGK Insulators, Ltd.
- Kiyoshi Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film transistor including a stacked multilayer graphene active...
- Patent number 12,166,112
- Issue date Dec 10, 2024
- Sumitomo Electric Industries, Ltd.
- Yasunori Tateno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,132,084
- Issue date Oct 29, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method for producing silicon carbide semiconductor device and silic...
- Patent number 12,100,739
- Issue date Sep 24, 2024
- Sumitomo Electric Industries, Ltd.
- Hideto Tamaso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of controlling wafer bow in a type III-V semiconductor device
- Patent number 12,080,785
- Issue date Sep 3, 2024
- Infineon Technologies Austria AG
- Seong-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure manufacturing methods and semiconductor str...
- Patent number 12,057,312
- Issue date Aug 6, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer graphene on non-polar face SiC substrate and control meth...
- Patent number 12,051,585
- Issue date Jul 30, 2024
- Tianjin University
- Lei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating vertically oriented planar structures for adv...
- Patent number 12,051,588
- Issue date Jul 30, 2024
- The Penn State Research Foundation
- Joshua Alexander Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,046,642
- Issue date Jul 23, 2024
- Fuji Electric Co., Ltd.
- Shinji Fujikake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nondestructive characterization for crystalline wafers
- Patent number 12,040,355
- Issue date Jul 16, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,033,854
- Issue date Jul 9, 2024
- Soitec
- Yann Sinquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 12,027,591
- Issue date Jul 2, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating field-effect transistor
- Patent number 12,020,931
- Issue date Jun 25, 2024
- Nippon Telegraph and Telephone Corporation
- Yuki Yoshiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 12,014,924
- Issue date Jun 18, 2024
- Sumitomo Electric Industries, Ltd.
- Kenji Kanbara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having frame structu...
- Patent number 11,990,520
- Issue date May 21, 2024
- Infineon Technologies AG
- Andre Brockmeier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILI...
- Publication number 20250022967
- Publication date Jan 16, 2025
- STMicroelectronics International N.V.
- Giuseppe D'ARRIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...
- Publication number 20250006492
- Publication date Jan 2, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interfacial Layer for Anneal Capping Layer
- Publication number 20250006507
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Yi ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20250006796
- Publication date Jan 2, 2025
- Sumitomo Electric Industries, Ltd.
- Takahiro SHIIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...
- Publication number 20240379351
- Publication date Nov 14, 2024
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20240371632
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Humberto Rodriguez Alvarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE FOR FABRICATION OF BETA GALLIUM OXIDE DEVICES
- Publication number 20240347339
- Publication date Oct 17, 2024
- Syrnatec, Inc.
- Yash Suresh Mirchandani
- B24 - GRINDING POLISHING
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332081
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
- Publication number 20240332365
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS
- Publication number 20240332352
- Publication date Oct 3, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...
- Publication number 20240332364
- Publication date Oct 3, 2024
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240332011
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...
- Publication number 20240312779
- Publication date Sep 19, 2024
- FILNEX INC.
- Mitsuhiko OGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE AND FABRICATION METHOD OF EPITAXIAL STRUCTURE
- Publication number 20240304442
- Publication date Sep 12, 2024
- GLOBALWAFERS CO., LTD.
- PO-JUNG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20240297222
- Publication date Sep 5, 2024
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240274434
- Publication date Aug 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240274500
- Publication date Aug 15, 2024
- Mitsubishi Electric Corporation
- Yoshihiro YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GROUP III-NITRIDE SEMICONDUCTOR
- Publication number 20240266168
- Publication date Aug 8, 2024
- SCREEN Holdings Co., Ltd.
- Masaki INABA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
POWER SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240266169
- Publication date Aug 8, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR LAYERED STRUCTURES AND PROCESSES FOR MAKING...
- Publication number 20240258105
- Publication date Aug 1, 2024
- Markus LEITGEB
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing silicon carbide semiconductor device and si...

Silicon carbide epitaxial substrate and method for manufacturing same

Method for producing a composite structure comprising a thin layer...

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

SiC composite substrate and composite substrate for semiconductor d...

Preparation method for semiconductor structure

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Thin film transistor including a stacked multilayer graphene active...

Silicon carbide semiconductor device and method of manufacturing si...

Biaxially oriented SiC composite substrate and semiconductor device...

Large dimension silicon carbide single crystalline materials with r...

Silicon carbide substrate

Method for producing silicon carbide semiconductor device and silic...

Silicon carbide substrate

SiC composite substrate including biaxially oreinted SiC layer and...

Method of controlling wafer bow in a type III-V semiconductor device

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a SiC substrate by simultaneously forming...

Semiconductor structure manufacturing methods and semiconductor str...

Monolayer graphene on non-polar face SiC substrate and control meth...

Method of fabricating vertically oriented planar structures for adv...

Silicon carbide semiconductor device and method of manufacturing si...

Nondestructive characterization for crystalline wafers

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a composite structure comprising a thin la...

Method for forming a semiconductor device and a semiconductor device

Method for fabricating field-effect transistor

Silicon carbide epitaxial substrate and method of manufacturing sil...

Silicon carbide epitaxial substrate and method for manufacturing si...

Method of manufacturing a semiconductor device having frame structu...

Patents Applicationslast 30 patents

A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILI...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...

Interfacial Layer for Anneal Capping Layer

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...

METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

COMPOSITE SUBSTRATE FOR FABRICATION OF BETA GALLIUM OXIDE DEVICES

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER

NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...

EPITAXIAL STRUCTURE AND FABRICATION METHOD OF EPITAXIAL STRUCTURE

SiC EPITAXIAL WAFER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

METHOD OF MANUFACTURING GROUP III-NITRIDE SEMICONDUCTOR

POWER SEMICONDUCTOR DEVICE MANUFACTURING METHOD

COMPOUND SEMICONDUCTOR LAYERED STRUCTURES AND PROCESSES FOR MAKING...