Silicon carbide

Industry

CPC
H01L21/02378

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02378Silicon carbide

Industries

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial growth using carbon buffer on substrate
- Patent number 12,308,227
- Issue date May 20, 2025
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide wafers and grinding method thereof
- Patent number 12,308,224
- Issue date May 20, 2025
- GlobalWafers Co., Ltd.
- Chin Chen Chiu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide components and methods for producing silicon carbid...
- Patent number 12,302,619
- Issue date May 13, 2025
- Infineon Technologies AG
- Roland Rupp
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 12,291,456
- Issue date May 6, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for compound semiconductor device
- Patent number 12,283,922
- Issue date Apr 22, 2025
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin wafer process for improved crystal utilization of wide bandgap...
- Patent number 12,283,482
- Issue date Apr 22, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer semiconductor material structure and preparation method...
- Patent number 12,278,104
- Issue date Apr 15, 2025
- Institute of Microelectronics of the Chines Academy of Sciences
- Fengwen Mu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices in a layer of epitaxial si...
- Patent number 12,272,738
- Issue date Apr 8, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, and method of manufacturing the same
- Patent number 12,266,693
- Issue date Apr 1, 2025
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vias in a GaN/diamond wafer
- Patent number 12,261,206
- Issue date Mar 25, 2025
- RFHIC Corporation
- Won Sang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire array, optoelectronic device and preparation method thereof
- Patent number 12,255,231
- Issue date Mar 18, 2025
- South China Normal University
- Richard Notzel
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graphene hybrids for biological and chemical sensing
- Patent number 12,247,923
- Issue date Mar 11, 2025
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC semiconductor substrate, and, production method therefor and pr...
- Patent number 12,237,377
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,237,378
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High purity polysilocarb derived silicon carbide powder
- Patent number 12,215,031
- Issue date Feb 4, 2025
- Pallidus, Inc.
- Andrew R. Hopkins
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of manufacturing semiconductor substrate and epitaxial growt...
- Patent number 12,209,328
- Issue date Jan 28, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,205,990
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Takafumi Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC composite substrate and composite substrate for semiconductor d...
- Patent number 12,183,792
- Issue date Dec 31, 2024
- NGK Insulators, Ltd.
- Kiyoshi Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film transistor including a stacked multilayer graphene active...
- Patent number 12,166,112
- Issue date Dec 10, 2024
- Sumitomo Electric Industries, Ltd.
- Yasunori Tateno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,132,084
- Issue date Oct 29, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method for producing silicon carbide semiconductor device and silic...
- Patent number 12,100,739
- Issue date Sep 24, 2024
- Sumitomo Electric Industries, Ltd.
- Hideto Tamaso
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250142910
- Publication date May 1, 2025
- Resonac Corporation
- Yoshitaka NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
- Publication number 20250132151
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A NON-DEFORMABLE P-SIC WAFER
- Publication number 20250125140
- Publication date Apr 17, 2025
- SOITEC
- Andrea Quintero-Colmenares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR THE PRODUCTION OF IMPROVED SIC-SUBSTRATES AND SIC-EPILAYERS
- Publication number 20250113571
- Publication date Apr 3, 2025
- Hitachi Energy Ltd
- Yulieth Cristina ARANGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
- Publication number 20250112043
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Vikram M. BHOSLE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250107171
- Publication date Mar 27, 2025
- Proterial, Ltd.
- Sadahiko KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250107189
- Publication date Mar 27, 2025
- Hon Young Semiconductor Corporation
- Jian-Yi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVI...
- Publication number 20250105004
- Publication date Mar 27, 2025
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME
- Publication number 20250107194
- Publication date Mar 27, 2025
- MICROCHIP TECHNOLOGY INCORPORATED
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LAYER TRANSFER
- Publication number 20250105005
- Publication date Mar 27, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250107118
- Publication date Mar 27, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250089322
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Mitsuhiro KUSHIBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxy
- Publication number 20250079165
- Publication date Mar 6, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
- Publication number 20250059679
- Publication date Feb 20, 2025
- Resonac Corporation
- Marusu KATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implant Hard Mask for Substrates
- Publication number 20250062122
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Jun FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...
- Publication number 20250056856
- Publication date Feb 13, 2025
- Sumitomo Electric Industries, Ltd.
- Naoki KAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...
- Publication number 20250051962
- Publication date Feb 13, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR EVALUATING SiC SUBSTRATE, METHOD FOR MANUFACTURING SiC S...
- Publication number 20250035570
- Publication date Jan 30, 2025
- Resonac Corporation
- Hiromasa SUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILI...
- Publication number 20250022967
- Publication date Jan 16, 2025
- STMicroelectronics International N.V.
- Giuseppe D'ARRIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...
- Publication number 20250006492
- Publication date Jan 2, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interfacial Layer for Anneal Capping Layer
- Publication number 20250006507
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Yi ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20250006796
- Publication date Jan 2, 2025
- Sumitomo Electric Industries, Ltd.
- Takahiro SHIIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...
- Publication number 20240379351
- Publication date Nov 14, 2024
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial growth using carbon buffer on substrate

Silicon carbide wafers and grinding method thereof

Silicon carbide components and methods for producing silicon carbid...

High purity SiOC and SiC, methods compositions and applications

Manufacturing method for compound semiconductor device

Thin wafer process for improved crystal utilization of wide bandgap...

Multi-layer semiconductor material structure and preparation method...

Methods of forming semiconductor devices in a layer of epitaxial si...

SiC epitaxial wafer, and method of manufacturing the same

Method of forming vias in a GaN/diamond wafer

Nanowire array, optoelectronic device and preparation method thereof

Graphene hybrids for biological and chemical sensing

Method for producing a SiC seed crystal for growth of a SiC ingot b...

SiC semiconductor substrate, and, production method therefor and pr...

Method for manufacturing SiC substrate

High purity polysilocarb derived silicon carbide powder

Method of manufacturing semiconductor substrate and epitaxial growt...

Method of manufacturing silicon carbide semiconductor device and si...

Silicon carbide epitaxial substrate and method for manufacturing same

Method for producing a composite structure comprising a thin layer...

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

SiC composite substrate and composite substrate for semiconductor d...

Preparation method for semiconductor structure

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Thin film transistor including a stacked multilayer graphene active...

Silicon carbide semiconductor device and method of manufacturing si...

Biaxially oriented SiC composite substrate and semiconductor device...

Large dimension silicon carbide single crystalline materials with r...

Silicon carbide substrate

Method for producing silicon carbide semiconductor device and silic...

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...

METHOD FOR MANUFACTURING A NON-DEFORMABLE P-SIC WAFER

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHOD FOR THE PRODUCTION OF IMPROVED SIC-SUBSTRATES AND SIC-EPILAYERS

LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVI...

SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE WITH LAYER TRANSFER

SEMICONDUCTOR DEVICE

WAFER AND METHOD FOR MANUFACTURING THE SAME

Silicon Carbide Epitaxy

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

Implant Hard Mask for Substrates

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...

METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...

METHOD FOR EVALUATING SiC SUBSTRATE, METHOD FOR MANUFACTURING SiC S...

A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILI...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...

Interfacial Layer for Anneal Capping Layer

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...