Silicon carbide

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CPC
H01L21/02529

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02529Silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device in a containment structure including a buried...
- Patent number 12,165,868
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,132,084
- Issue date Oct 29, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,112,985
- Issue date Oct 8, 2024
- GlobalWafers Co., Ltd.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,068,321
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 12,057,498
- Issue date Aug 6, 2024
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) method and devices
- Patent number 12,057,485
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,048,133
- Issue date Jul 23, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,033,854
- Issue date Jul 9, 2024
- Soitec
- Yann Sinquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a carrier trapping region including cry...
- Patent number 12,027,579
- Issue date Jul 2, 2024
- Rohm Co., Ltd.
- Seigo Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 12,020,927
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 12,014,924
- Issue date Jun 18, 2024
- Sumitomo Electric Industries, Ltd.
- Kenji Kanbara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,990,510
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, production method therefor, and defect identif...
- Patent number 11,961,736
- Issue date Apr 16, 2024
- Resonac Corporation
- Ling Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 11,948,794
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Masashi Sakai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus for growing a semiconductor wafer and associated manufact...
- Patent number 11,946,158
- Issue date Apr 2, 2024
- STMicroelectronics S.r.l.
- Ruggero Anzalone
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,935,951
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of evaluating cleanliness, method of determining cleaning co...
- Patent number 11,920,257
- Issue date Mar 5, 2024
- Sumco Corporation
- Takashi Muramatsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...
- Publication number 20240405076
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...
- Publication number 20240379351
- Publication date Nov 14, 2024
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR
- Publication number 20240371633
- Publication date Nov 7, 2024
- Tongwei Solar (Meishan) Co., Ltd.
- Hao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SOURCE/DRAIN TRANSISTOR
- Publication number 20240363434
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE
- Publication number 20240363691
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATES, SEMICONDUCTOR STRUCTURES, AND METHODS FOR MAN...
- Publication number 20240347601
- Publication date Oct 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332081
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...
- Publication number 20240332364
- Publication date Oct 3, 2024
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20240297222
- Publication date Sep 5, 2024
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240282820
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240274434
- Publication date Aug 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...
- Publication number 20240250164
- Publication date Jul 25, 2024
- DENSO CORPORATION
- Masahiro KUMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER
- Publication number 20240222435
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIU...
- Publication number 20240222228
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240213307
- Publication date Jun 27, 2024
- Fuji Electric Co., Ltd.
- Tomohiro MORIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN ELECTRONIC DEVICE
- Publication number 20240203731
- Publication date Jun 20, 2024
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Rémy Gassilloud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT DEVICE AND METHOD
- Publication number 20240186145
- Publication date Jun 6, 2024
- ASML Netherlands B.V.
- Monim AZIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...
- Publication number 20240183063
- Publication date Jun 6, 2024
- XIAMEN UNIVERSITY
- Junyong KANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTUR...
- Publication number 20240170284
- Publication date May 23, 2024
- SOITEC
- Gweltaz Gaudin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...
- Publication number 20240170558
- Publication date May 23, 2024
- Rohm Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...
- Publication number 20240153763
- Publication date May 9, 2024
- Massachusetts Institute of Technology
- Rachael L. Myers-Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRU...
- Publication number 20240145294
- Publication date May 2, 2024
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240145613
- Publication date May 2, 2024
- Taiwan-Asia Semiconductor Corporation
- Di-Bao WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...
- Publication number 20240145592
- Publication date May 2, 2024
- Intel Corporation
- Anand S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Semiconductor device in a containment structure including a buried...

Silicon carbide semiconductor device and method of manufacturing si...

Biaxially oriented SiC composite substrate and semiconductor device...

Semiconductor substrate

Silicon carbide substrate

Semiconductor device having a silicon carbide drift zone over a sil...

SiC composite substrate including biaxially oreinted SiC layer and...

Semiconductor substrate, semiconductor device, and manufacturing me...

Semiconductor devices

Method for FinFET LDD doping

Method for manufacturing a SiC substrate by simultaneously forming...

Silicon carbide semiconductor device and method for manufacturing same

Gate-all-around (GAA) method and devices

Semiconductor structure

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a composite structure comprising a thin la...

Semiconductor device having a carrier trapping region including cry...

Method for manufacturing silicon carbide epitaxial substrate and me...

SiC semiconductor substrate, method for manufacturing same, and dev...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Silicon carbide epitaxial substrate and method for manufacturing si...

Semiconductor device and manufacturing method thereof

SiC epitaxial wafer, production method therefor, and defect identif...

Silicon carbide crystal

Method of manufacturing silicon carbide epitaxial wafer

Apparatus for growing a semiconductor wafer and associated manufact...

Metal-insensitive epitaxy formation

Method of evaluating cleanliness, method of determining cleaning co...

Patents Applicationslast 30 patents

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...

PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR

RAISED SOURCE/DRAIN TRANSISTOR

WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

COMPOSITE SUBSTRATES, SEMICONDUCTOR STRUCTURES, AND METHODS FOR MAN...

METHOD FOR MANUFACTURING SIC SUBSTRATE

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SiC EPITAXIAL WAFER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...

COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER

DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIU...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING AN ELECTRONIC DEVICE

SURFACE TREATMENT DEVICE AND METHOD

METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...

METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTUR...

SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...

SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...

METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRU...

SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...