Silicon carbide

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CPC
H01L21/02529

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02529Silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Composite substrate, composite substrate preparation method, semico...
- Patent number 12,369,373
- Issue date Jul 22, 2025
- Huawei Technologies Co., Ltd.
- Bo Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing a Group IV semiconductor and related semicond...
- Patent number 12,363,960
- Issue date Jul 15, 2025
- ASM IP Holding B.V.
- Joe Margetis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,362,175
- Issue date Jul 15, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,362,173
- Issue date Jul 15, 2025
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fill-in planarization system and method
- Patent number 12,362,237
- Issue date Jul 15, 2025
- Wolfspeed, Inc.
- Simon Bubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC wafer and manufacturing method thereof
- Patent number 12,363,973
- Issue date Jul 15, 2025
- PROTERIAL, LTD.
- Keisuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 12,356,674
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
- Patent number 12,356,687
- Issue date Jul 8, 2025
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,342,610
- Issue date Jun 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing device for SiC semiconductor substrate
- Patent number 12,325,930
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,328,939
- Issue date Jun 10, 2025
- Samsung Electronics Co., Ltd.
- Myoung-Sun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using sic container
- Patent number 12,320,030
- Issue date Jun 3, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal material for air gaps in semiconductor devices
- Patent number 12,324,200
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuen-Shin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 12,300,724
- Issue date May 13, 2025
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide components and methods for producing silicon carbid...
- Patent number 12,302,619
- Issue date May 13, 2025
- Infineon Technologies AG
- Roland Rupp
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 12,291,456
- Issue date May 6, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin wafer process for improved crystal utilization of wide bandgap...
- Patent number 12,283,482
- Issue date Apr 22, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices in a layer of epitaxial si...
- Patent number 12,272,738
- Issue date Apr 8, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a ceramic matrix composite component
- Patent number 12,269,779
- Issue date Apr 8, 2025
- RTX Corporation
- Paul Sheedy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer, and method of manufacturing the same
- Patent number 12,266,693
- Issue date Apr 1, 2025
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact formed using bottom-...
- Patent number 12,266,688
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective metallization of integrated circuit packages
- Patent number 12,261,123
- Issue date Mar 25, 2025
- Advanced Technical Ceramics Company
- Aaron Fitzsimmons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 12,249,630
- Issue date Mar 11, 2025
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor substrate, and, production method therefor and pr...
- Patent number 12,237,377
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,237,378
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a fin field effect transistor (FinFET) comprising epit...
- Patent number 12,237,403
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 12,217,959
- Issue date Feb 4, 2025
- Kokusai Electric Corporation
- Kimihiko Nakatani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
HIGH PURITY POLYSILOCARB DERIVED SILICON CARBIDE MATERIALS, APPLICA...
- Publication number 20250236524
- Publication date Jul 24, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20250236989
- Publication date Jul 24, 2025
- Kabushiki Kaisha Toshiba
- Tsutomu KIYOSAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-RESISTANCE SOURCE/DRAIN FEATURES
- Publication number 20250234610
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FOR ELECTRONIC DEVICE
- Publication number 20250233031
- Publication date Jul 17, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS TO MODIFY CARBIDE SURFACES IN SEMICONDUCTOR D...
- Publication number 20250218778
- Publication date Jul 3, 2025
- Intel Corporation
- Robert Stanley Jordan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20250218771
- Publication date Jul 3, 2025
- Sumitomo Electric Industries, Ltd.
- Hideyuki HISANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20250210416
- Publication date Jun 26, 2025
- Kabushiki Kaisha Toshiba
- Etsuo HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN CONTACT FORMED USING BOTTOM-...
- Publication number 20250203976
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Li WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYE...
- Publication number 20250188603
- Publication date Jun 12, 2025
- TOKAI CARBON KOREA CO., LTD.
- JOUNG IL KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of Semiconductor Device Fabrication Involving Porous Silico...
- Publication number 20250194125
- Publication date Jun 12, 2025
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrates for Power Semiconductor Devices
- Publication number 20250194190
- Publication date Jun 12, 2025
- Wolfspeed, Inc.
- Adam Benjamin Barkley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...
- Publication number 20250179685
- Publication date Jun 5, 2025
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP.
- Sagi Varghese Mathai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL FILM
- Publication number 20250163609
- Publication date May 22, 2025
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi OHTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250169103
- Publication date May 22, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Silicon Carbide Switch-B...
- Publication number 20250157813
- Publication date May 15, 2025
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250142910
- Publication date May 1, 2025
- Resonac Corporation
- Yoshitaka NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERING EPI STACKS FOR EXTREME WAFER THINNING
- Publication number 20250132163
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Raghuveer Satya MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A NON-DEFORMABLE P-SIC WAFER
- Publication number 20250125140
- Publication date Apr 17, 2025
- SOITEC
- Andrea Quintero-Colmenares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE PRODUCTION OF IMPROVED SIC-SUBSTRATES AND SIC-EPILAYERS
- Publication number 20250113571
- Publication date Apr 3, 2025
- Hitachi Energy Ltd
- Yulieth Cristina ARANGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250107171
- Publication date Mar 27, 2025
- Proterial, Ltd.
- Sadahiko KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVI...
- Publication number 20250105004
- Publication date Mar 27, 2025
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME
- Publication number 20250107194
- Publication date Mar 27, 2025
- MICROCHIP TECHNOLOGY INCORPORATED
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...
- Publication number 20250092567
- Publication date Mar 20, 2025
- Wenzhou University
- Wensheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250089322
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Mitsuhiro KUSHIBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxy
- Publication number 20250079165
- Publication date Mar 6, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
- Publication number 20250059679
- Publication date Feb 20, 2025
- Resonac Corporation
- Marusu KATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BURIED LAYER
- Publication number 20250062119
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE
- Publication number 20250037997
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Composite substrate, composite substrate preparation method, semico...

Method for depositing a Group IV semiconductor and related semicond...

Method for manufacturing SiC substrate

Method for manufacturing a composite structure comprising a thin la...

Fill-in planarization system and method

SiC wafer and manufacturing method thereof

Method for fabricating a strained structure and structure formed

SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer

Method of manufacturing semiconductor device

Manufacturing device for SiC semiconductor substrate

Method for CVD deposition of n-type doped silicon carbide and epita...

Semiconductor device and method for fabricating the same

Method of using sic container

Seal material for air gaps in semiconductor devices

Method of manufacturing silicon carbide semiconductor devices

Silicon carbide components and methods for producing silicon carbid...

High purity SiOC and SiC, methods compositions and applications

Semiconductor device having doped epitaxial region and its methods...

Thin wafer process for improved crystal utilization of wide bandgap...

Methods of forming semiconductor devices in a layer of epitaxial si...

Method for producing a ceramic matrix composite component

SiC epitaxial wafer, and method of manufacturing the same

Semiconductor device with source/drain contact formed using bottom-...

Selective metallization of integrated circuit packages

Method for manufacturing a grid

SiC semiconductor substrate, and, production method therefor and pr...

Method for manufacturing SiC substrate

Structure of a fin field effect transistor (FinFET) comprising epit...

Semiconductor device

Method of manufacturing semiconductor device, substrate processing...

Patents Applicationslast 30 patents

HIGH PURITY POLYSILOCARB DERIVED SILICON CARBIDE MATERIALS, APPLICA...

SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

LOW-RESISTANCE SOURCE/DRAIN FEATURES

SUBSTRATE FOR ELECTRONIC DEVICE

METHODS AND APPARATUS TO MODIFY CARBIDE SURFACES IN SEMICONDUCTOR D...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN CONTACT FORMED USING BOTTOM-...

COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYE...

Methods of Semiconductor Device Fabrication Involving Porous Silico...

Substrates for Power Semiconductor Devices

SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

SEMICONDUCTOR DEVICE

Semiconductor Device and Method of Forming Silicon Carbide Switch-B...

SiC EPITAXIAL WAFER

ENGINEERING EPI STACKS FOR EXTREME WAFER THINNING

METHOD FOR MANUFACTURING A NON-DEFORMABLE P-SIC WAFER

METHOD FOR THE PRODUCTION OF IMPROVED SIC-SUBSTRATES AND SIC-EPILAYERS

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVI...

SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...

WAFER AND METHOD FOR MANUFACTURING THE SAME

Silicon Carbide Epitaxy

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

SEMICONDUCTOR BURIED LAYER

EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE