Silicon carbide

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CPC
H01L21/02529

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02529Silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 12,217,959
- Issue date Feb 4, 2025
- Kokusai Electric Corporation
- Kimihiko Nakatani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High purity polysilocarb derived silicon carbide powder
- Patent number 12,215,031
- Issue date Feb 4, 2025
- Pallidus, Inc.
- Andrew R. Hopkins
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,206,006
- Issue date Jan 21, 2025
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, in...
- Patent number 12,176,398
- Issue date Dec 24, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device in a containment structure including a buried...
- Patent number 12,165,868
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,132,084
- Issue date Oct 29, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,112,985
- Issue date Oct 8, 2024
- GlobalWafers Co., Ltd.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,068,321
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 12,057,498
- Issue date Aug 6, 2024
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) method and devices
- Patent number 12,057,485
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,048,133
- Issue date Jul 23, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,033,854
- Issue date Jul 9, 2024
- Soitec
- Yann Sinquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a carrier trapping region including cry...
- Patent number 12,027,579
- Issue date Jul 2, 2024
- Rohm Co., Ltd.
- Seigo Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 12,020,927
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 12,014,924
- Issue date Jun 18, 2024
- Sumitomo Electric Industries, Ltd.
- Kenji Kanbara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
- Publication number 20250059679
- Publication date Feb 20, 2025
- Resonac Corporation
- Marusu KATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BURIED LAYER
- Publication number 20250062119
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE
- Publication number 20250037997
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE INCLUDING A TRANSFER FOIL WITH POROUS SILICON C...
- Publication number 20250022707
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Matteo Piccin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...
- Publication number 20250006799
- Publication date Jan 2, 2025
- AIR WATER INC.
- Keisuke KAWAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...
- Publication number 20250006492
- Publication date Jan 2, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE
- Publication number 20240429047
- Publication date Dec 26, 2024
- SICOXS CORPORATION
- Kuniaki YAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...
- Publication number 20240405076
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...
- Publication number 20240379351
- Publication date Nov 14, 2024
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR
- Publication number 20240371633
- Publication date Nov 7, 2024
- Tongwei Solar (Meishan) Co., Ltd.
- Hao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SOURCE/DRAIN TRANSISTOR
- Publication number 20240363434
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE
- Publication number 20240363691
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATES, SEMICONDUCTOR STRUCTURES, AND METHODS FOR MAN...
- Publication number 20240347601
- Publication date Oct 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332081
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...
- Publication number 20240332364
- Publication date Oct 3, 2024
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20240297222
- Publication date Sep 5, 2024
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240282820
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240274434
- Publication date Aug 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...
- Publication number 20240250164
- Publication date Jul 25, 2024
- DENSO CORPORATION
- Masahiro KUMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER
- Publication number 20240222435
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Method of manufacturing semiconductor device, substrate processing...

High purity polysilocarb derived silicon carbide powder

Semiconductor device and method for fabricating the same

Silicon carbide epitaxial substrate and method for manufacturing same

Method for producing a composite structure comprising a thin layer...

Semiconductor device, semiconductor device manufacturing method, in...

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Semiconductor device in a containment structure including a buried...

Silicon carbide semiconductor device and method of manufacturing si...

Biaxially oriented SiC composite substrate and semiconductor device...

Semiconductor substrate

Silicon carbide substrate

Semiconductor device having a silicon carbide drift zone over a sil...

SiC composite substrate including biaxially oreinted SiC layer and...

Semiconductor substrate, semiconductor device, and manufacturing me...

Semiconductor devices

Method for FinFET LDD doping

Method for manufacturing a SiC substrate by simultaneously forming...

Silicon carbide semiconductor device and method for manufacturing same

Gate-all-around (GAA) method and devices

Semiconductor structure

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a composite structure comprising a thin la...

Semiconductor device having a carrier trapping region including cry...

Method for manufacturing silicon carbide epitaxial substrate and me...

SiC semiconductor substrate, method for manufacturing same, and dev...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Silicon carbide epitaxial substrate and method for manufacturing si...

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

SEMICONDUCTOR BURIED LAYER

EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE

COMPOSITE SUBSTRATE INCLUDING A TRANSFER FOIL WITH POROUS SILICON C...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...

METHOD FOR PRODUCING POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...

PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR

RAISED SOURCE/DRAIN TRANSISTOR

WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

COMPOSITE SUBSTRATES, SEMICONDUCTOR STRUCTURES, AND METHODS FOR MAN...

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SIC SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SiC EPITAXIAL WAFER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...

COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER