Spin-exchange-coupled multilayers comprising at least a nano-oxide layer [NOL]

Industry

CPC
H01F10/3259

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3259Spin-exchange-coupled multilayers comprising at least a nano-oxide layer [NOL]

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element having a nano-current-channel structure
- Patent number 11,957,063
- Issue date Apr 9, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM stacks and memory devices
- Patent number 11,862,373
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,842,757
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,825,664
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnonic electromagnetic radiation sources with high output power a...
- Patent number 11,817,242
- Issue date Nov 14, 2023
- Wisconsin Alumni Research Foundation
- Jiamian Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 11,793,087
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction devices including a free magnetic trench l...
- Patent number 11,751,484
- Issue date Sep 5, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of manufacturing three-dimensional arrays with MTJ devices...
- Patent number 11,751,481
- Issue date Sep 5, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque oscillator (STO) sensors used in nucleic acid sequencin...
- Patent number 11,738,336
- Issue date Aug 29, 2023
- Western Digital Technologies, Inc.
- Patrick Braganca
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Magnetic multi-layers containing MgO sublayers as perpendicularly m...
- Patent number 11,646,143
- Issue date May 9, 2023
- International Business Machines Corporation
- Aakash Pushp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top buffer layer for magnetic tunnel junction application
- Patent number 11,621,393
- Issue date Apr 4, 2023
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating magnetic memory device
- Patent number 11,545,617
- Issue date Jan 3, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM device and methods of making such an MRAM device
- Patent number 11,538,856
- Issue date Dec 27, 2022
- GLOBALFOUNDRIES U.S. INC.
- Hemant Dixit
- G11 - INFORMATION STORAGE
Information Patent Grant
Bidirectional selector device for memory applications
- Patent number 11,538,857
- Issue date Dec 27, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,527,275
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistance sensor devices and methods of forming the...
- Patent number 11,513,175
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ping Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory devices
- Patent number 11,502,242
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for MRAM top electrode via connection
- Patent number 11,469,269
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM stacks, MRAM devices and methods of forming the same
- Patent number 11,456,100
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for MRAM top electrode via connection
- Patent number 11,437,433
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device including a magnesium containing dus...
- Patent number 11,404,632
- Issue date Aug 2, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a magnesium containing dus...
- Patent number 11,404,193
- Issue date Aug 2, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Stress sensor
- Patent number 11,366,028
- Issue date Jun 21, 2022
- Murata Manufacturing Co., Ltd.
- Daichi Chiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making the same
- Patent number 11,348,715
- Issue date May 31, 2022
- Samsung Electronics Co., Ltd.
- Hong Sik Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,289,538
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensor, sensor module, and diagnostic device
- Patent number 11,280,853
- Issue date Mar 22, 2022
- Kabushiki Kaisha Toshiba
- Satoshi Shirotori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory structure
- Patent number 11,227,990
- Issue date Jan 18, 2022
- Industrial Technology Research Institute
- Ziaur Rahaman Shakh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encapsulation topography-assisted self-aligned MRAM top contact
- Patent number 11,195,993
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensors with a mixed oxide passivation layer
- Patent number 11,175,358
- Issue date Nov 16, 2021
- MagArray, Inc.
- Shan Xiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 11,177,431
- Issue date Nov 16, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240062794
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20240040801
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20230413683
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mingyuan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...
- Publication number 20230403948
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...
- Publication number 20230294085
- Publication date Sep 21, 2023
- Western Digital Technologies, Inc.
- Patrick BRAGANCA
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
MAGNONIC ELECTROMAGNETIC RADIATION SOURCES WITH HIGH OUTPUT POWER A...
- Publication number 20230154662
- Publication date May 18, 2023
- Wisconsin Alumni Research Foundation
- Jiamian Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230109928
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Application
NANO SPINTRONIC DEVICE USING SPIN CURRENT OF FERROMAGNETIC MATERIAL...
- Publication number 20230005651
- Publication date Jan 5, 2023
- Korea Institute of Science and Technology
- Hyun Cheol Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MARM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20220367098
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bidirectional Selector Device for Memory Applications
- Publication number 20220352255
- Publication date Nov 3, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20220246843
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20220216269
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TRANSFER TORQUE MAGNETORESISTIVE MEMORY DEVICE WITH A FREE LAY...
- Publication number 20220139435
- Publication date May 5, 2022
- Western Digital Technologies, Inc.
- Tiffany SANTOS
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of Manufacturing Three-Dimensional Arrays with MTJ Devices...
- Publication number 20220037588
- Publication date Feb 3, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Satoru ARAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING MAGNETIC MEMORY DEVICE
- Publication number 20220020918
- Publication date Jan 20, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITIONS OF CHIRAL MOLECULES AND PEROVSKITE NANOCRYSTALS AND ME...
- Publication number 20220002619
- Publication date Jan 6, 2022
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Joseph Matthew LUTHER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE AND METHODS OF MAKING SUCH AN MRAM DEVICE
- Publication number 20210359000
- Publication date Nov 18, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Hemant Dixit
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20210351345
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20210343933
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shy-Jay LIN
- G11 - INFORMATION STORAGE
Information Patent Application
Bidirectional Selector Device for Memory Applications
- Publication number 20210313393
- Publication date Oct 7, 2021
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED MEMORY DEVICES
- Publication number 20210305494
- Publication date Sep 30, 2021
- International Business Machines Corporation
- Ashim Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACK AND METHODS THEREFOR
- Publication number 20210288245
- Publication date Sep 16, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Renu WHIG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES
- Publication number 20210247470
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ping ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE USING AN ETCH STOP DIELECTRIC LAYER AND METHODS FOR F...
- Publication number 20210217812
- Publication date Jul 15, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Tai HSIAO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...
- Publication number 20210210676
- Publication date Jul 8, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...
- Publication number 20210210677
- Publication date Jul 8, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20210175284
- Publication date Jun 10, 2021
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20210175414
- Publication date Jun 10, 2021
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210167277
- Publication date Jun 3, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE

Spin-exchange-coupled multilayers comprising at least a nano-oxide layer [NOL]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive element having a nano-current-channel structure

MRAM stacks and memory devices

Crystal seed layer for magnetic random access memory (MRAM)

Memory device and semiconductor die, and method of fabricating memo...

Magnonic electromagnetic radiation sources with high output power a...

Magnetic tunnel junction structures and related methods

Magnetic tunnel junction devices including a free magnetic trench l...

Methods of manufacturing three-dimensional arrays with MTJ devices...

Spin torque oscillator (STO) sensors used in nucleic acid sequencin...

Magnetic multi-layers containing MgO sublayers as perpendicularly m...

Top buffer layer for magnetic tunnel junction application

Method of fabricating magnetic memory device

MRAM device and methods of making such an MRAM device

Bidirectional selector device for memory applications

Crystal seed layer for magnetic random access memory (MRAM)

Tunnel magnetoresistance sensor devices and methods of forming the...

Embedded memory devices

Techniques for MRAM top electrode via connection

MRAM stacks, MRAM devices and methods of forming the same

Techniques for MRAM top electrode via connection

Magnetoresistive memory device including a magnesium containing dus...

Magnetoresistive memory device including a magnesium containing dus...

Stress sensor

Semiconductor device and method of making the same

Memory device and semiconductor die, and method of fabricating memo...

Magnetic sensor, sensor module, and diagnostic device

Magnetic memory structure

Encapsulation topography-assisted self-aligned MRAM top contact

Magnetic sensors with a mixed oxide passivation layer

Magnetic memory device and method for manufacturing the same

Patents Applicationslast 30 patents

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...

SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...

MAGNONIC ELECTROMAGNETIC RADIATION SOURCES WITH HIGH OUTPUT POWER A...

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

NANO SPINTRONIC DEVICE USING SPIN CURRENT OF FERROMAGNETIC MATERIAL...

MARM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

Bidirectional Selector Device for Memory Applications

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

SPIN-TRANSFER TORQUE MAGNETORESISTIVE MEMORY DEVICE WITH A FREE LAY...

Methods of Manufacturing Three-Dimensional Arrays with MTJ Devices...

METHOD OF FABRICATING MAGNETIC MEMORY DEVICE

COMPOSITIONS OF CHIRAL MOLECULES AND PEROVSKITE NANOCRYSTALS AND ME...

MRAM DEVICE AND METHODS OF MAKING SUCH AN MRAM DEVICE

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

Bidirectional Selector Device for Memory Applications

EMBEDDED MEMORY DEVICES

MAGNETORESISTIVE STACK AND METHODS THEREFOR

SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES

MEMORY DEVICE USING AN ETCH STOP DIELECTRIC LAYER AND METHODS FOR F...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...

MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION

Nitride Diffusion Barrier Structure for Spintronic Applications

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME