Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

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H01F10/3286

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

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H01F10/3286Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device
- Patent number 12,295,268
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetoresistive memory device with a free lay...
- Patent number 12,283,296
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Tiffany Santos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic element using spin-orbit torque and magnetic tunnel junction...
- Patent number 12,274,178
- Issue date Apr 8, 2025
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,262,648
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,245,518
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic laminated film, magnetic memory element, magnetic memory,...
- Patent number 12,236,988
- Issue date Feb 25, 2025
- Tohoku University
- Yoshiaki Saito
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Voltage controlled magnetic anisotropy (VCMA) memory devices includ...
- Patent number 12,225,828
- Issue date Feb 11, 2025
- SanDisk Technologies, Inc.
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for skyrmion based logic device
- Patent number 12,211,641
- Issue date Jan 28, 2025
- CEREMPRPHIC, INC.
- Sanghamitra Debroy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,211,535
- Issue date Jan 28, 2025
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin memory encryption
- Patent number 12,201,029
- Issue date Jan 14, 2025
- Colorado State University Research Foundation
- Kristen Buchanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Warped magnetic tunnel junctions and bit-patterned media
- Patent number 12,170,162
- Issue date Dec 17, 2024
- Jannier Maximo Roiz-Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque (SOT)-based magnetic tunnel junction and method o...
- Patent number 12,161,051
- Issue date Dec 3, 2024
- Korea University Research and Business Foundation
- Young Keun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic storage device
- Patent number 12,133,472
- Issue date Oct 29, 2024
- Kioxia Corporation
- Katsuhiko Koui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,106,790
- Issue date Oct 1, 2024
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction element with a composite capping layer...
- Patent number 12,108,684
- Issue date Oct 1, 2024
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 12,096,699
- Issue date Sep 17, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Synthetic antiferromagnet, magnetic tunneling junction device inclu...
- Patent number 12,080,459
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun Ryu
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque device having a spin current polarized at a canting ang...
- Patent number 12,075,708
- Issue date Aug 27, 2024
- National University of Singapore
- Kaiming Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,052,930
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device
- Patent number 12,048,252
- Issue date Jul 23, 2024
- Kioxia Corporation
- Taiga Isoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for fiber tip re-imaging in LIDAR systems
- Patent number 12,041,789
- Issue date Jul 16, 2024
- Aeva, Inc.
- Mina Rezk
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 12,029,136
- Issue date Jul 2, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack/structure with one or more transition metals...
- Patent number 12,029,137
- Issue date Jul 2, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Core magnetization reversal method of skyrmion and data storage dev...
- Patent number 12,022,744
- Issue date Jun 25, 2024
- Seoul National University R&DB Foundation
- Sang Koog Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
TMR SENSOR HAVING TUNED VORTEX RESPONSE
- Publication number 20250164585
- Publication date May 22, 2025
- ALLEGRO MICROSYSTEMS, LLC
- Paolo Campiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20250120322
- Publication date Apr 10, 2025
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN MEMORY ENCRYPTION
- Publication number 20250098546
- Publication date Mar 20, 2025
- Colorado State University Research Foundation
- Kristen Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE
- Publication number 20250087234
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Naoyuki NARITA
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layer a...
- Publication number 20250063952
- Publication date Feb 20, 2025
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE STACK AND METHODS THEREFOR
- Publication number 20250063953
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Renu WHIG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20250040444
- Publication date Jan 30, 2025
- International Business Machines Corporation
- MATTHIAS GEORG GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20250008843
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Soo Man SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240412909
- Publication date Dec 12, 2024
- University of Rochester
- Eby G. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT
- Publication number 20240395283
- Publication date Nov 28, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20240387089
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387090
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...
- Publication number 20240347089
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20240334840
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...
- Publication number 20240321333
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
- Publication number 20240315145
- Publication date Sep 19, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio IKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20240315144
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TSANN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNON JUNCTION, MAGNON RANDOM ACCESS MEMORY, MAGNON MICROWAVE OSCI...
- Publication number 20240274177
- Publication date Aug 15, 2024
- Institute of Physics, Chinese Academy of Sciences
- Xiufeng HAN
- G11 - INFORMATION STORAGE
Information Patent Application
Near-Landauer Reversible Skyrmion Logic with Voltage-Based Propagation
- Publication number 20240243748
- Publication date Jul 18, 2024
- Joseph S. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX
- Publication number 20240237543
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FRE...
- Publication number 20240237542
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING
- Publication number 20240234000
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES
- Publication number 20240224814
- Publication date Jul 4, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY USING SPIN-ORBIT TORQUE
- Publication number 20240188449
- Publication date Jun 6, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS

Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic memory device

Spin-transfer torque magnetoresistive memory device with a free lay...

Logic element using spin-orbit torque and magnetic tunnel junction...

Magnetic memory device

Magnetic memory device

Magnetic laminated film, magnetic memory element, magnetic memory,...

Voltage controlled magnetic anisotropy (VCMA) memory devices includ...

System and method for skyrmion based logic device

Magnetoresistive memory device and method of operating same using f...

Spin memory encryption

Warped magnetic tunnel junctions and bit-patterned media

Storage element and storage apparatus

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Spin-orbit torque (SOT)-based magnetic tunnel junction and method o...

Magnetic memory element including perpendicular enhancement layers...

Magnetic storage device

Magnetoresistive memory device and method of operating same using f...

Magnetic tunneling junction element with a composite capping layer...

Magnetoresistive effect element

Synthetic antiferromagnet, magnetic tunneling junction device inclu...

Dual magnetic tunnel junction (DMTJ) stack design

Spin torque device having a spin current polarized at a canting ang...

Method for manufacturing a magnetic random-access memory device usi...

Magnetic tunneling junction device and memory device including the...

Magnetoresistive memory device

Techniques for fiber tip re-imaging in LIDAR systems

Magnetic memory device including magnetoresistance effect element

Magnetoresistive stack/structure with one or more transition metals...

Core magnetization reversal method of skyrmion and data storage dev...

Patents Applicationslast 30 patents

TMR SENSOR HAVING TUNED VORTEX RESPONSE

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

SPIN MEMORY ENCRYPTION

MAGNETIC DEVICE, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE

Magnetic Memory Element Including Perpendicular Enhancement Layer a...

MAGNETORESISTIVE STACK AND METHODS THEREFOR

FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY

SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

MAGNON JUNCTION, MAGNON RANDOM ACCESS MEMORY, MAGNON MICROWAVE OSCI...

Near-Landauer Reversible Skyrmion Logic with Voltage-Based Propagation

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FRE...

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING

CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES

MAGNETIC MEMORY USING SPIN-ORBIT TORQUE

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME