Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

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H01F10/3286

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3286Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Spin-orbit torque device, method for fabricating a spin-orbit torqu...
- Patent number 11,968,842
- Issue date Apr 23, 2024
- National University of Singapore
- Jingsheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a nano-current-channel structure
- Patent number 11,957,063
- Issue date Apr 9, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory using spin-orbit torque
- Patent number 11,944,015
- Issue date Mar 26, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,930,716
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic memory apparatus
- Patent number 11,922,985
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Syuta Honda
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Interlayer exchange coupled multiplier
- Patent number 11,917,924
- Issue date Feb 27, 2024
- Ceremorphic, Inc.
- Venkat Mattela
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic structure for magnetic device
- Patent number 11,910,725
- Issue date Feb 20, 2024
- Imec VZW
- Bart Vermeulen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular MTJ element having a cube-textured reference layer an...
- Patent number 11,910,721
- Issue date Feb 20, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain wall moving element, domain wall moving type magnetic record...
- Patent number 11,894,172
- Issue date Feb 6, 2024
- TDK Corporation
- Tetsuhito Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,887,640
- Issue date Jan 30, 2024
- Western Digital Technologies, Inc.
- Derek Stewart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,889,702
- Issue date Jan 30, 2024
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical spin orbit torque devices
- Patent number RE49797
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Vladimir Nikitin
Information Patent Grant
MRAM stacks and memory devices
- Patent number 11,862,373
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STT-SOT hybrid magnetoresistive element and manufacture thereof
- Patent number 11,854,589
- Issue date Dec 26, 2023
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,842,757
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a plurality of reference l...
- Patent number 11,839,162
- Issue date Dec 5, 2023
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction stack
- Patent number 11,832,525
- Issue date Nov 28, 2023
- Imec VZW
- Mohit Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,818,963
- Issue date Nov 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultra-density nanostructure GdFe thin film with large perpendicular...
- Patent number 11,804,322
- Issue date Oct 31, 2023
- KING FAISAL UNIVERSITY
- Mai Mostafa Khalaf Ali
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming perpendicular magnetoresistive elements using sa...
- Patent number 11,805,702
- Issue date Oct 31, 2023
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 11,793,087
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin logic device based on spin-charge conversion and spin logic ar...
- Patent number 11,785,783
- Issue date Oct 10, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Jongill Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipole-coupled spin-orbit torque structure
- Patent number 11,776,726
- Issue date Oct 3, 2023
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,776,605
- Issue date Oct 3, 2023
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive alloy layer in magnetic memory devices and methods of fa...
- Patent number 11,770,979
- Issue date Sep 26, 2023
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element with a robust reference layer
- Patent number 11,763,972
- Issue date Sep 19, 2023
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240062794
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240047115
- Publication date Feb 8, 2024
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...
- Publication number 20240027547
- Publication date Jan 25, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Samridh Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20230413683
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mingyuan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...
- Publication number 20230403865
- Publication date Dec 14, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Jongill HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...
- Publication number 20230403948
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURON DEVICE BASED ON SPIN ORBIT TORQUE
- Publication number 20230394291
- Publication date Dec 7, 2023
- INSTITUTE OF MICROELECTRONICS, CHINESE ACANDEMY OF SCIENCES
- Guozhong XING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...
- Publication number 20230397503
- Publication date Dec 7, 2023
- SOLAR APPLIED MATERIALS TECHNOLOGY CORP.
- CHIH-WEN TANG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
FIELD-FREE SPIN-ORBIT TORQUE SWITCHING OF PERPENDICULARLY POLARIZED...
- Publication number 20230335325
- Publication date Oct 19, 2023
- Carnegie Mellon University
- Simranjeet Singh
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING F...
- Publication number 20230307027
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING F...
- Publication number 20230307028
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ELECTRONIC DEVICE
- Publication number 20230298648
- Publication date Sep 21, 2023
- Huawei Technologies Co., Ltd
- Qing QIN
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...
- Publication number 20230294085
- Publication date Sep 21, 2023
- Western Digital Technologies, Inc.
- Patrick BRAGANCA
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...
- Publication number 20230284538
- Publication date Sep 7, 2023
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230240150
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES HAVING A LOW SWITCHING VOLTAGE
- Publication number 20230210014
- Publication date Jun 29, 2023
- Northwestern University
- Pedram Khalili Amiri
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20230210017
- Publication date Jun 29, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20230207177
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC...
- Publication number 20230187287
- Publication date Jun 15, 2023
- Samsung Electronics Co., Ltd.
- Eunsun Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Free-layer Design for a Voltage Control of Magnetic Anisotropy Magn...
- Publication number 20230178131
- Publication date Jun 8, 2023
- IMEC vzw
- Robert Carpenter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPINTRONIC NANODEVICE FOR LOW-POWER, CELLULAR-LEVEL, MAGNETIC NEURO...
- Publication number 20230149729
- Publication date May 18, 2023
- Regents of the University of Minnesota
- Jian-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC ELEMENT USING SPIN-ORBIT TORQUE AND MAGNETIC TUNNEL JUNCTION...
- Publication number 20230119656
- Publication date Apr 20, 2023
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jin Pyo HONG
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230109928
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE CONTROLLED MAGNETIC ANISOTROPY (VCMA) MEMORY DEVICES INCLUD...
- Publication number 20230107190
- Publication date Apr 6, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Alan KALITSOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230096447
- Publication date Mar 30, 2023
- Hyundai Motor Company
- Ji-Sung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE
- Publication number 20230067295
- Publication date Mar 2, 2023
- YIMIN GUO
- G11 - INFORMATION STORAGE

Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Spin-orbit torque device, method for fabricating a spin-orbit torqu...

Magnetoresistive element having a nano-current-channel structure

Magnetic memory using spin-orbit torque

Reduction of capping layer resistance area product for magnetic dev...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Magnetic memory device and magnetic memory apparatus

High retention storage layer using ultra-low RA MgO process in perp...

Interlayer exchange coupled multiplier

Magnetic structure for magnetic device

Perpendicular MTJ element having a cube-textured reference layer an...

Domain wall moving element, domain wall moving type magnetic record...

Voltage-controlled magnetic anisotropy memory device including an a...

Voltage-controlled magnetic anisotropy memory device including an a...

Vertical spin orbit torque devices

MRAM stacks and memory devices

STT-SOT hybrid magnetoresistive element and manufacture thereof

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Crystal seed layer for magnetic random access memory (MRAM)

Magnetoresistive memory device including a plurality of reference l...

Dual magnetic tunnel junction stack

Nano-rod spin orbit coupling based magnetic random access memory wi...

Ultra-density nanostructure GdFe thin film with large perpendicular...

Methods of forming perpendicular magnetoresistive elements using sa...

Magnetic tunnel junction structures and related methods

Spin logic device based on spin-charge conversion and spin logic ar...

Dipole-coupled spin-orbit torque structure

Storage element and storage apparatus

Conductive alloy layer in magnetic memory devices and methods of fa...

Magnetic tunnel junction element with a robust reference layer

Magnetic memory element incorporating dual perpendicular enhancemen...

Patents Applicationslast 30 patents

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...

STORAGE ELEMENT AND STORAGE APPARATUS

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...

Magnetic Memory Element Including Perpendicular Enhancement Layers...

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...

NEURON DEVICE BASED ON SPIN ORBIT TORQUE

FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...

FIELD-FREE SPIN-ORBIT TORQUE SWITCHING OF PERPENDICULARLY POLARIZED...

MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING F...

MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING F...

MEMORY AND ELECTRONIC DEVICE

SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...

MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...

MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING THE SAME

MAGNETIC MEMORY DEVICES HAVING A LOW SWITCHING VOLTAGE

MAGNETORESISTIVE EFFECT ELEMENT

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC...

Free-layer Design for a Voltage Control of Magnetic Anisotropy Magn...

SPINTRONIC NANODEVICE FOR LOW-POWER, CELLULAR-LEVEL, MAGNETIC NEURO...

LOGIC ELEMENT USING SPIN-ORBIT TORQUE AND MAGNETIC TUNNEL JUNCTION...

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

VOLTAGE CONTROLLED MAGNETIC ANISOTROPY (VCMA) MEMORY DEVICES INCLUD...

SPIN-ORBIT TORQUE DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE