Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

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H01F10/3286

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3286Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Warped magnetic tunnel junctions and bit-patterned media
- Patent number 12,170,162
- Issue date Dec 17, 2024
- Jannier Maximo Roiz-Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque (SOT)-based magnetic tunnel junction and method o...
- Patent number 12,161,051
- Issue date Dec 3, 2024
- Korea University Research and Business Foundation
- Young Keun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic storage device
- Patent number 12,133,472
- Issue date Oct 29, 2024
- Kioxia Corporation
- Katsuhiko Koui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,106,790
- Issue date Oct 1, 2024
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction element with a composite capping layer...
- Patent number 12,108,684
- Issue date Oct 1, 2024
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 12,096,699
- Issue date Sep 17, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Synthetic antiferromagnet, magnetic tunneling junction device inclu...
- Patent number 12,080,459
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun Ryu
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque device having a spin current polarized at a canting ang...
- Patent number 12,075,708
- Issue date Aug 27, 2024
- National University of Singapore
- Kaiming Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,052,930
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device
- Patent number 12,048,252
- Issue date Jul 23, 2024
- Kioxia Corporation
- Taiga Isoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for fiber tip re-imaging in LIDAR systems
- Patent number 12,041,789
- Issue date Jul 16, 2024
- Aeva, Inc.
- Mina Rezk
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 12,029,136
- Issue date Jul 2, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack/structure with one or more transition metals...
- Patent number 12,029,137
- Issue date Jul 2, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Core magnetization reversal method of skyrmion and data storage dev...
- Patent number 12,022,744
- Issue date Jun 25, 2024
- Seoul National University R&DB Foundation
- Sang Koog Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) element and its fabrication process
- Patent number 12,022,743
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element and magnetoresistive memory device
- Patent number 12,004,355
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 11,985,907
- Issue date May 14, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque device, method for fabricating a spin-orbit torqu...
- Patent number 11,968,842
- Issue date Apr 23, 2024
- National University of Singapore
- Jingsheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a nano-current-channel structure
- Patent number 11,957,063
- Issue date Apr 9, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory using spin-orbit torque
- Patent number 11,944,015
- Issue date Mar 26, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,930,716
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic memory apparatus
- Patent number 11,922,985
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Syuta Honda
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240412909
- Publication date Dec 12, 2024
- University of Rochester
- Eby G. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT
- Publication number 20240395283
- Publication date Nov 28, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20240387089
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387090
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...
- Publication number 20240347089
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20240334840
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...
- Publication number 20240321333
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
- Publication number 20240315145
- Publication date Sep 19, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio IKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20240315144
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TSANN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNON JUNCTION, MAGNON RANDOM ACCESS MEMORY, MAGNON MICROWAVE OSCI...
- Publication number 20240274177
- Publication date Aug 15, 2024
- Institute of Physics, Chinese Academy of Sciences
- Xiufeng HAN
- G11 - INFORMATION STORAGE
Information Patent Application
Near-Landauer Reversible Skyrmion Logic with Voltage-Based Propagation
- Publication number 20240243748
- Publication date Jul 18, 2024
- Joseph S. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX
- Publication number 20240237543
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FRE...
- Publication number 20240237542
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING
- Publication number 20240234000
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES
- Publication number 20240224814
- Publication date Jul 4, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY USING SPIN-ORBIT TORQUE
- Publication number 20240188449
- Publication date Jun 6, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240062794
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240047115
- Publication date Feb 8, 2024
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...
- Publication number 20240027547
- Publication date Jan 25, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Samridh Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20230413683
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mingyuan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...
- Publication number 20230403865
- Publication date Dec 14, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Jongill HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...
- Publication number 20230403948
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURON DEVICE BASED ON SPIN ORBIT TORQUE
- Publication number 20230394291
- Publication date Dec 7, 2023
- INSTITUTE OF MICROELECTRONICS, CHINESE ACANDEMY OF SCIENCES
- Guozhong XING
- G06 - COMPUTING CALCULATING COUNTING

Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Storage element and storage apparatus

Warped magnetic tunnel junctions and bit-patterned media

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Spin-orbit torque (SOT)-based magnetic tunnel junction and method o...

Magnetic memory element including perpendicular enhancement layers...

Magnetic storage device

Magnetoresistive memory device and method of operating same using f...

Magnetic tunneling junction element with a composite capping layer...

Magnetoresistive effect element

Synthetic antiferromagnet, magnetic tunneling junction device inclu...

Dual magnetic tunnel junction (DMTJ) stack design

Spin torque device having a spin current polarized at a canting ang...

Method for manufacturing a magnetic random-access memory device usi...

Magnetic tunneling junction device and memory device including the...

Magnetoresistive memory device

Techniques for fiber tip re-imaging in LIDAR systems

Magnetic memory device including magnetoresistance effect element

Magnetoresistive stack/structure with one or more transition metals...

Core magnetization reversal method of skyrmion and data storage dev...

Magnetic tunnel junction (MTJ) element and its fabrication process

Magnetic tunnel junction element and magnetoresistive memory device

Magnetic memory device including magnetoresistance effect element

Spin-orbit torque device, method for fabricating a spin-orbit torqu...

Magnetoresistive element having a nano-current-channel structure

Magnetic memory using spin-orbit torque

Reduction of capping layer resistance area product for magnetic dev...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

High retention storage layer using ultra-low RA MgO process in perp...

Magnetic memory device and magnetic memory apparatus

Patents Applicationslast 30 patents

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

MAGNON JUNCTION, MAGNON RANDOM ACCESS MEMORY, MAGNON MICROWAVE OSCI...

Near-Landauer Reversible Skyrmion Logic with Voltage-Based Propagation

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FRE...

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING

CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES

MAGNETIC MEMORY USING SPIN-ORBIT TORQUE

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...

STORAGE ELEMENT AND STORAGE APPARATUS

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...

Magnetic Memory Element Including Perpendicular Enhancement Layers...

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...

NEURON DEVICE BASED ON SPIN ORBIT TORQUE