Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

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H01F10/329Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device
- Patent number 12,295,268
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetoresistive memory device with a free lay...
- Patent number 12,283,296
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Tiffany Santos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,278,033
- Issue date Apr 15, 2025
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic element using spin-orbit torque and magnetic tunnel junction...
- Patent number 12,274,178
- Issue date Apr 8, 2025
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,262,648
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 12,213,385
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Warped magnetic tunnel junctions and bit-patterned media
- Patent number 12,170,162
- Issue date Dec 17, 2024
- Jannier Maximo Roiz-Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 12,156,479
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Lin Huang
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin torque oscillator maser
- Patent number 12,126,303
- Issue date Oct 22, 2024
- Massachusetts Institute of Technology
- Luqiao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunneling junction element with a composite capping layer...
- Patent number 12,108,684
- Issue date Oct 1, 2024
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano spintronic device using spin current of ferromagnetic material...
- Patent number 12,106,879
- Issue date Oct 1, 2024
- Korea Institute of Science and Technology
- Hyun Cheol Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunneling junction switching with parallel spin-momentum l...
- Patent number 12,094,508
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- See-Hun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element
- Patent number 12,096,699
- Issue date Sep 17, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque device having a spin current polarized at a canting ang...
- Patent number 12,075,708
- Issue date Aug 27, 2024
- National University of Singapore
- Kaiming Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming MTJS with lithography-variation independent crit...
- Patent number 12,058,940
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fiber tip re-imaging in LIDAR systems
- Patent number 12,041,789
- Issue date Jul 16, 2024
- Aeva, Inc.
- Mina Rezk
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,040,115
- Issue date Jul 16, 2024
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Cobalt-boron (CoB) layer for magnetic recording devices, memory dev...
- Patent number 12,033,675
- Issue date Jul 9, 2024
- Western Digital Technologies, Inc.
- Susumu Okamura
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 12,029,136
- Issue date Jul 2, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack/structure with one or more transition metals...
- Patent number 12,029,137
- Issue date Jul 2, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque and spin-transfer torque magnetoresistive random-...
- Patent number 12,016,251
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 12,010,925
- Issue date Jun 11, 2024
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and magnetoresistive memory device
- Patent number 12,004,355
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 11,985,907
- Issue date May 14, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250081857
- Publication date Mar 6, 2025
- National Tsing-Hua University
- Chih-Huang Lai
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
DEVICE AND METHOD FOR DETECTING A MAGNETIC FIELD USING THE SPIN ORB...
- Publication number 20250076419
- Publication date Mar 6, 2025
- INFINEON TECHNOLOGIES AG
- Dieter SUESS
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layer a...
- Publication number 20250063952
- Publication date Feb 20, 2025
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide...
- Publication number 20250062060
- Publication date Feb 20, 2025
- TSINGHUA UNIVERSITY
- Tianxiang NAN
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACK AND METHODS THEREFOR
- Publication number 20250063953
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Renu WHIG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSDUCER
- Publication number 20250046502
- Publication date Feb 6, 2025
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20250040447
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20250008843
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Soo Man SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240412909
- Publication date Dec 12, 2024
- University of Rochester
- Eby G. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE ELEMENT AND STORAGE DEVICE
- Publication number 20240415025
- Publication date Dec 12, 2024
- Sony Semiconductor Solutions Corporation
- YUITO KAGEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389472
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Lin Huang
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387090
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Application
DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
- Publication number 20240371559
- Publication date Nov 7, 2024
- TOHOKU UNIVERSITY
- Yutaro TAKEUCHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
- Publication number 20240357941
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240339255
- Publication date Oct 10, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
- Publication number 20240315145
- Publication date Sep 19, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio IKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...
- Publication number 20240284803
- Publication date Aug 22, 2024
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240266099
- Publication date Aug 8, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC
- Publication number 20240222475
- Publication date Jul 4, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240196756
- Publication date Jun 13, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY USING SPIN-ORBIT TORQUE
- Publication number 20240188449
- Publication date Jun 6, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STORAGE DEVICE
- Publication number 20240090344
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Takeo KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240047115
- Publication date Feb 8, 2024
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20240040801
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE

Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic memory device

Spin-transfer torque magnetoresistive memory device with a free lay...

Magnetoresistance effect element

Logic element using spin-orbit torque and magnetic tunnel junction...

Magnetic memory device

Protective passivation layer for magnetic tunnel junctions

Warped magnetic tunnel junctions and bit-patterned media

Storage element and storage apparatus

Magnetic tunnel junction with low defect rate after high temperatur...

Memory device and manufacturing method thereof

Magnetic memory element including perpendicular enhancement layers...

Spin torque oscillator maser

Magnetic tunneling junction element with a composite capping layer...

Nano spintronic device using spin current of ferromagnetic material...

Magnetic tunneling junction switching with parallel spin-momentum l...

Magnetoresistive effect element

Dual magnetic tunnel junction (DMTJ) stack design

Spin torque device having a spin current polarized at a canting ang...

Method for manufacturing a magnetic random-access memory device usi...

Method for forming MTJS with lithography-variation independent crit...

Techniques for fiber tip re-imaging in LIDAR systems

Magnetoresistance effect element

Magnetic device and magnetic random access memory

Cobalt-boron (CoB) layer for magnetic recording devices, memory dev...

Magnetic memory device including magnetoresistance effect element

Magnetoresistive stack/structure with one or more transition metals...

Spin-orbit torque and spin-transfer torque magnetoresistive random-...

Magnetic memory device and method for manufacturing the same

Magnetic tunnel junction element and magnetoresistive memory device

Magnetic memory device including magnetoresistance effect element

Patents Applicationslast 30 patents

SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY

DEVICE AND METHOD FOR DETECTING A MAGNETIC FIELD USING THE SPIN ORB...

Magnetic Memory Element Including Perpendicular Enhancement Layer a...

Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide...

MAGNETORESISTIVE STACK AND METHODS THEREFOR

SPIN TRANSDUCER

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

STORAGE ELEMENT AND STORAGE DEVICE

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...

MAGNETORESISTANCE EFFECT ELEMENT

TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETIC MEMORY USING SPIN-ORBIT TORQUE

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

MAGNETIC STORAGE DEVICE

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...