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Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current
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ELECTRICITY
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Electric elements
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MAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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Thin magnetic films
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H01F10/329
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current
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Warped magnetic tunnel junctions and bit-patterned media
Patent number
12,170,162
Issue date
Dec 17, 2024
Jannier Maximo Roiz-Wilson
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Storage element and storage apparatus
Patent number
12,170,104
Issue date
Dec 17, 2024
Sony Group Corporation
Yutaka Higo
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Magnetic tunnel junction with low defect rate after high temperatur...
Patent number
12,167,701
Issue date
Dec 10, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Huanlong Liu
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Memory device and manufacturing method thereof
Patent number
12,156,479
Issue date
Nov 26, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Yen-Lin Huang
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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Magnetic memory element including perpendicular enhancement layers...
Patent number
12,133,471
Issue date
Oct 29, 2024
Avalanche Technology, Inc.
Zihui Wang
B82 - NANO-TECHNOLOGY
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Spin torque oscillator maser
Patent number
12,126,303
Issue date
Oct 22, 2024
Massachusetts Institute of Technology
Luqiao Liu
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic tunneling junction element with a composite capping layer...
Patent number
12,108,684
Issue date
Oct 1, 2024
HeFeChip Corporation Limited
Qinli Ma
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Nano spintronic device using spin current of ferromagnetic material...
Patent number
12,106,879
Issue date
Oct 1, 2024
Korea Institute of Science and Technology
Hyun Cheol Koo
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Magnetic tunneling junction switching with parallel spin-momentum l...
Patent number
12,094,508
Issue date
Sep 17, 2024
Samsung Electronics Co., Ltd.
See-Hun Yang
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Magnetoresistive effect element
Patent number
12,096,699
Issue date
Sep 17, 2024
TDK Corporation
Tomoyuki Sasaki
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Dual magnetic tunnel junction (DMTJ) stack design
Patent number
12,082,509
Issue date
Sep 3, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Vignesh Sundar
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Spin torque device having a spin current polarized at a canting ang...
Patent number
12,075,708
Issue date
Aug 27, 2024
National University of Singapore
Kaiming Cai
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Method for manufacturing a magnetic random-access memory device usi...
Patent number
12,069,957
Issue date
Aug 20, 2024
Integrated Silicon Solution, (Cayman) Inc.
Jorge Vasquez
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Method for forming MTJS with lithography-variation independent crit...
Patent number
12,058,940
Issue date
Aug 6, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
William J. Gallagher
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Techniques for fiber tip re-imaging in LIDAR systems
Patent number
12,041,789
Issue date
Jul 16, 2024
Aeva, Inc.
Mina Rezk
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Magnetoresistance effect element
Patent number
12,040,115
Issue date
Jul 16, 2024
TDK Corporation
Kazuumi Inubushi
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Magnetic device and magnetic random access memory
Patent number
12,035,636
Issue date
Jul 9, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Ji-Feng Ying
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Cobalt-boron (CoB) layer for magnetic recording devices, memory dev...
Patent number
12,033,675
Issue date
Jul 9, 2024
Western Digital Technologies, Inc.
Susumu Okamura
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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Magnetic memory device including magnetoresistance effect element
Patent number
12,029,136
Issue date
Jul 2, 2024
Kioxia Corporation
Shogo Itai
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Magnetoresistive stack/structure with one or more transition metals...
Patent number
12,029,137
Issue date
Jul 2, 2024
EVERSPIN TECHNOLOGIES, INC.
Sumio Ikegawa
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Spin-orbit torque and spin-transfer torque magnetoresistive random-...
Patent number
12,016,251
Issue date
Jun 18, 2024
International Business Machines Corporation
Heng Wu
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Magnetic memory device and method for manufacturing the same
Patent number
12,010,925
Issue date
Jun 11, 2024
Samsung Electronics Co., Ltd.
Ung Hwan Pi
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Magnetic tunnel junction element and magnetoresistive memory device
Patent number
12,004,355
Issue date
Jun 4, 2024
Samsung Electronics Co., Ltd.
Yoshiaki Sonobe
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Magnetic memory device including magnetoresistance effect element
Patent number
11,985,907
Issue date
May 14, 2024
Kioxia Corporation
Shogo Itai
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Spin-orbit torque device, method for fabricating a spin-orbit torqu...
Patent number
11,968,842
Issue date
Apr 23, 2024
National University of Singapore
Jingsheng Chen
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Magnetoresistive element having a nano-current-channel structure
Patent number
11,957,063
Issue date
Apr 9, 2024
Yimin Guo
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Semiconductor device and method for fabricating the same
Patent number
11,950,513
Issue date
Apr 2, 2024
United Microelectronics Corp.
Hui-Lin Wang
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic memory using spin-orbit torque
Patent number
11,944,015
Issue date
Mar 26, 2024
EVERSPIN TECHNOLOGIES, INC.
Han-Jong Chia
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic device
Patent number
11,935,677
Issue date
Mar 19, 2024
Samsung Electronics Co., Ltd.
Younghyun Kim
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Reduction of capping layer resistance area product for magnetic dev...
Patent number
11,930,716
Issue date
Mar 12, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Guenole Jan
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last 30 patents
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Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
Publication number
20240412909
Publication date
Dec 12, 2024
University of Rochester
Eby G. Friedman
H01 - BASIC ELECTRIC ELEMENTS
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STORAGE ELEMENT AND STORAGE DEVICE
Publication number
20240415025
Publication date
Dec 12, 2024
Sony Semiconductor Solutions Corporation
YUITO KAGEYAMA
H01 - BASIC ELECTRIC ELEMENTS
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MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
Publication number
20240387090
Publication date
Nov 21, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Shy-Jay Lin
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MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Publication number
20240389472
Publication date
Nov 21, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Yen-Lin Huang
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
Publication number
20240371559
Publication date
Nov 7, 2024
TOHOKU UNIVERSITY
Yutaro TAKEUCHI
G06 - COMPUTING CALCULATING COUNTING
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SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
Publication number
20240365684
Publication date
Oct 31, 2024
TDK Corporation
Tomoyuki SASAKI
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MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
Publication number
20240357941
Publication date
Oct 24, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
William J. Gallagher
H01 - BASIC ELECTRIC ELEMENTS
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MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
Publication number
20240349620
Publication date
Oct 17, 2024
International Business Machines Corporation
Daniel Worledge
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MAGNETORESISTANCE EFFECT ELEMENT
Publication number
20240339255
Publication date
Oct 10, 2024
TDK Corporation
Kazuumi INUBUSHI
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MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
Publication number
20240315145
Publication date
Sep 19, 2024
EVERSPIN TECHNOLOGIES, INC.
Sumio IKEGAWA
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MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
Publication number
20240315147
Publication date
Sep 19, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Ji-Feng YING
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Patent Application
TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...
Publication number
20240284803
Publication date
Aug 22, 2024
Tohoku University
Tetsuo Endoh
H01 - BASIC ELECTRIC ELEMENTS
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MAGNETORESISTANCE EFFECT ELEMENT
Publication number
20240266099
Publication date
Aug 8, 2024
TDK Corporation
Kazuumi INUBUSHI
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Patent Application
TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC
Publication number
20240222475
Publication date
Jul 4, 2024
Intel Corporation
Punyashloka Debashis
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Publication number
20240196756
Publication date
Jun 13, 2024
UNITED MICROELECTRONICS CORP.
Hui-Lin Wang
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MAGNETIC MEMORY USING SPIN-ORBIT TORQUE
Publication number
20240188449
Publication date
Jun 6, 2024
EVERSPIN TECHNOLOGIES, INC.
Han-Jong CHIA
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Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
Publication number
20240130247
Publication date
Apr 18, 2024
TDK Corporation
Tomoyuki SASAKI
G01 - MEASURING TESTING
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Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
Publication number
20240112840
Publication date
Apr 4, 2024
Western Digital Technologies, Inc.
Susumu OKAMURA
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
Publication number
20240087786
Publication date
Mar 14, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Shy-Jay Lin
H01 - BASIC ELECTRIC ELEMENTS
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MAGNETIC STORAGE DEVICE
Publication number
20240090344
Publication date
Mar 14, 2024
KIOXIA Corporation
Takeo KOIKE
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
Publication number
20240047115
Publication date
Feb 8, 2024
University of Rochester
Mohammad Kazemi
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MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
Publication number
20240040801
Publication date
Feb 1, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Ji-Feng YING
G11 - INFORMATION STORAGE
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Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
Publication number
20240005975
Publication date
Jan 4, 2024
SONY GROUP CORPORATION
Yutaka Higo
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Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
Publication number
20230413683
Publication date
Dec 21, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Mingyuan SONG
H01 - BASIC ELECTRIC ELEMENTS
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SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...
Publication number
20230403865
Publication date
Dec 14, 2023
Industry-Academic Cooperation Foundation, Yonsei University
Jongill HONG
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic Memory Element Including Perpendicular Enhancement Layers...
Publication number
20230403945
Publication date
Dec 14, 2023
Avalanche Technology, Inc.
Zihui Wang
B82 - NANO-TECHNOLOGY
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Patent Application
Spin Torque Oscillator Maser
Publication number
20230387855
Publication date
Nov 30, 2023
Massachusetts Institute of Technology
Luqiao LIU
H01 - BASIC ELECTRIC ELEMENTS
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Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
Publication number
20230386721
Publication date
Nov 30, 2023
Western Digital Technologies, Inc.
Quang LE
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MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
Publication number
20230389448
Publication date
Nov 30, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Chien-Min Lee
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
Publication number
20230371395
Publication date
Nov 16, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Jodi Mari Iwata
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