Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current

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H01F10/329

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/329Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 11,985,907
- Issue date May 14, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque device, method for fabricating a spin-orbit torqu...
- Patent number 11,968,842
- Issue date Apr 23, 2024
- National University of Singapore
- Jingsheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a nano-current-channel structure
- Patent number 11,957,063
- Issue date Apr 9, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,950,513
- Issue date Apr 2, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory using spin-orbit torque
- Patent number 11,944,015
- Issue date Mar 26, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device
- Patent number 11,935,677
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,930,716
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
BiSbX (012) layers having increased operating temperatures for SOT...
- Patent number 11,908,496
- Issue date Feb 20, 2024
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin element and magnetic memory
- Patent number 11,903,327
- Issue date Feb 13, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain wall moving element, domain wall moving type magnetic record...
- Patent number 11,894,172
- Issue date Feb 6, 2024
- TDK Corporation
- Tetsuhito Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system and device for integration of volatile and non-volat...
- Patent number 11,881,263
- Issue date Jan 23, 2024
- ARM Limited
- Akhilesh Ramlaut Jaiswal
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical spin orbit torque devices
- Patent number RE49797
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Vladimir Nikitin
Information Patent Grant
MRAM stacks and memory devices
- Patent number 11,862,373
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunneling junction with synthetic free layer for SOT-MRAM
- Patent number 11,844,287
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device including a plurality of reference l...
- Patent number 11,839,162
- Issue date Dec 5, 2023
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction stack
- Patent number 11,832,525
- Issue date Nov 28, 2023
- Imec VZW
- Mohit Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,825,664
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,818,963
- Issue date Nov 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices having a first magnetic pattern and multipl...
- Patent number 11,805,659
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 11,793,087
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin logic device based on spin-charge conversion and spin logic ar...
- Patent number 11,785,783
- Issue date Oct 10, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Jongill Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipole-coupled spin-orbit torque structure
- Patent number 11,776,726
- Issue date Oct 3, 2023
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,776,605
- Issue date Oct 3, 2023
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Buffer layers and interlayers that promote BiSbx (012) alloy orient...
- Patent number 11,763,973
- Issue date Sep 19, 2023
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetization rotational element, spin-orbit torq...
- Patent number 11,756,600
- Issue date Sep 12, 2023
- TDK Corporation
- Yohei Shiokawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,758,820
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction devices including a free magnetic trench l...
- Patent number 11,751,484
- Issue date Sep 5, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of manufacturing three-dimensional arrays with MTJ devices...
- Patent number 11,751,481
- Issue date Sep 5, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STORAGE DEVICE
- Publication number 20240090344
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Takeo KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240047115
- Publication date Feb 8, 2024
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20240040801
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20230413683
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mingyuan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...
- Publication number 20230403865
- Publication date Dec 14, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Jongill HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Spin Torque Oscillator Maser
- Publication number 20230387855
- Publication date Nov 30, 2023
- Massachusetts Institute of Technology
- Luqiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
- Publication number 20230386721
- Publication date Nov 30, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20230389448
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20230371395
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
RECEIVING DEVICE, TRANSCEIVER DEVICE, COMMUNICATION SYSTEM, PORTABL...
- Publication number 20230304856
- Publication date Sep 28, 2023
- TDK Corporation
- Hideaki FUKUZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...
- Publication number 20230294085
- Publication date Sep 21, 2023
- Western Digital Technologies, Inc.
- Patrick BRAGANCA
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230263073
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES HAVING A FIRST MAGNETIC PATTERN AND MULTIPL...
- Publication number 20230209838
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20230210017
- Publication date Jun 29, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230144429
- Publication date May 11, 2023
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC ELEMENT USING SPIN-ORBIT TORQUE AND MAGNETIC TUNNEL JUNCTION...
- Publication number 20230119656
- Publication date Apr 20, 2023
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jin Pyo HONG
- G11 - INFORMATION STORAGE
Information Patent Application
BiSbX (012) Layers Having Increased Operating Temperatures For SOT...
- Publication number 20230121375
- Publication date Apr 20, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230104744
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ELEMENT AND MAGNETIC MEMORY
- Publication number 20230071849
- Publication date Mar 9, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE
- Publication number 20230067295
- Publication date Mar 2, 2023
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYS...
- Publication number 20230065198
- Publication date Mar 2, 2023
- Intel Corporation
- Ian Alexander Young
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN-ORBIT TORQUE AND SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM-...
- Publication number 20230064289
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
- Publication number 20230047223
- Publication date Feb 16, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230040502
- Publication date Feb 9, 2023
- Samsung Electronics Co., Ltd.
- Byongguk PARK
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20230040768
- Publication date Feb 9, 2023
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE

Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic memory device including magnetoresistance effect element

Spin-orbit torque device, method for fabricating a spin-orbit torqu...

Magnetoresistive element having a nano-current-channel structure

Semiconductor device and method for fabricating the same

Magnetic memory using spin-orbit torque

Magnetic device

Reduction of capping layer resistance area product for magnetic dev...

High retention storage layer using ultra-low RA MgO process in perp...

BiSbX (012) layers having increased operating temperatures for SOT...

Spin element and magnetic memory

Domain wall moving element, domain wall moving type magnetic record...

Method, system and device for integration of volatile and non-volat...

Vertical spin orbit torque devices

MRAM stacks and memory devices

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

Magnetoresistive memory device including a plurality of reference l...

Dual magnetic tunnel junction stack

Memory device and semiconductor die, and method of fabricating memo...

Nano-rod spin orbit coupling based magnetic random access memory wi...

Magnetic memory devices having a first magnetic pattern and multipl...

Magnetic tunnel junction structures and related methods

Spin logic device based on spin-charge conversion and spin logic ar...

Dipole-coupled spin-orbit torque structure

Storage element and storage apparatus

Buffer layers and interlayers that promote BiSbx (012) alloy orient...

Spin-orbit torque magnetization rotational element, spin-orbit torq...

Magnetic memory element incorporating dual perpendicular enhancemen...

Protective passivation layer for magnetic tunnel junctions

Magnetic tunnel junction devices including a free magnetic trench l...

Methods of manufacturing three-dimensional arrays with MTJ devices...

Patents Applicationslast 30 patents

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

MAGNETIC STORAGE DEVICE

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

STORAGE ELEMENT AND STORAGE APPARATUS

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...

Magnetic Memory Element Including Perpendicular Enhancement Layers...

Spin Torque Oscillator Maser

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

RECEIVING DEVICE, TRANSCEIVER DEVICE, COMMUNICATION SYSTEM, PORTABL...

SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC MEMORY DEVICES HAVING A FIRST MAGNETIC PATTERN AND MULTIPL...

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

LOGIC ELEMENT USING SPIN-ORBIT TORQUE AND MAGNETIC TUNNEL JUNCTION...

BiSbX (012) Layers Having Increased Operating Temperatures For SOT...

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SPIN ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE

DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYS...

SPIN-ORBIT TORQUE AND SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM-...

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...

MAGNETIC MEMORY DEVICE

STACKED SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY