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H01L21/02587

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02587Structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial blocking layer for multi-gate devices and fabrication met...
- Patent number 11,923,194
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain relief trenches for epitaxial growth
- Patent number 11,804,374
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chuan Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing pillar-shaped semiconductor device
- Patent number 11,705,338
- Issue date Jul 18, 2023
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensionally stretchable single crystalline semiconductor me...
- Patent number 11,697,889
- Issue date Jul 11, 2023
- International Business Machines Corporation
- Alexander Reznicek
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for making an inverted T channel field effect transistor (IT...
- Patent number 11,664,459
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with N/P boundary buffer
- Patent number 11,569,132
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Romain Lallement
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 11,502,171
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial blocking layer for multi-gate devices and fabrication met...
- Patent number 11,315,785
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing different populations of molecules or fine par...
- Patent number 11,254,910
- Issue date Feb 22, 2022
- Japan Science and Technology Agency
- Koji Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered substrate for microelectronic devices
- Patent number 11,232,948
- Issue date Jan 25, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melt-growth of single-crystal alloy semiconductor structures and se...
- Patent number 11,198,951
- Issue date Dec 14, 2021
- University of Southampton
- Frederic Yannick Gardes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement
- Patent number 11,177,368
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Chieh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor component
- Patent number 11,145,745
- Issue date Oct 12, 2021
- Infineon Technologies AG
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with strained superlattice as source/drain region
- Patent number 11,121,254
- Issue date Sep 14, 2021
- United Microelectronics Corp.
- Bo-Shiun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating graphene structure having nanobubbles
- Patent number 11,078,082
- Issue date Aug 3, 2021
- Samsung Electronics Co., Ltd.
- Jiyeon Ku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystalline multilayer structure and semiconductor device
- Patent number 11,038,026
- Issue date Jun 15, 2021
- FLOSFIA INC.
- Toshimi Hitora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film formation method, vacuum processing apparatus, method of manuf...
- Patent number 11,035,034
- Issue date Jun 15, 2021
- Canon Anelva Corporation
- Yoshiaki Daigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 10,957,819
- Issue date Mar 23, 2021
- UNM Rainforest Innovations
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 10,937,864
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with n/p boundary buffer
- Patent number 10,903,124
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Romain Lallement
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted T channel field effect transistor (ITFET) including a supe...
- Patent number 10,763,370
- Issue date Sep 1, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid phase epitaxy of 3C-SiC on Si(001)
- Patent number 10,686,041
- Issue date Jun 16, 2020
- The Government of the United States of America, as represented by the Secreta...
- Connie H. Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 10,651,273
- Issue date May 12, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 10,644,144
- Issue date May 5, 2020
- STC.UNM
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser irradiation induced surface planarization of polycrystalline...
- Patent number 10,629,434
- Issue date Apr 21, 2020
- The Trustees of Columbia University In the City of New York
- James S. Im
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Nanosheet semiconductor structure with inner spacer formed by oxida...
- Patent number 10,615,258
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Xin Miao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating device including two-dimensional material
- Patent number 10,600,646
- Issue date Mar 24, 2020
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano flake defect passivation method and electronic device manufact...
- Patent number 10,580,714
- Issue date Mar 3, 2020
- Electronics and Telecommunications Research Institute
- Sun Jin Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating device including two-dimensional material
- Patent number 10,515,798
- Issue date Dec 24, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-imprinting using high-pressure crystal phase transformations
- Patent number 10,497,564
- Issue date Dec 3, 2019
- Northrop Grumman Systems Corporation
- Vincent Gambin
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION MET...
- Publication number 20240266167
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Che CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD
- Publication number 20240213085
- Publication date Jun 27, 2024
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Ho Sung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING LAMINATE, PRODUCING APPARATUS FOR LAMINATE, LA...
- Publication number 20240177993
- Publication date May 30, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi HASHIGAMI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20240120436
- Publication date Apr 11, 2024
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH
- Publication number 20230377881
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Chuan LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SILICON GERMANIUM STRUCTURES
- Publication number 20230245888
- Publication date Aug 3, 2023
- ASM IP HOLDING, B.V.
- Wonjong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20220336695
- Publication date Oct 20, 2022
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Blocking Layer for Multi-Gate Devices and Fabrication Met...
- Publication number 20220254623
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Che CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH
- Publication number 20220130670
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Yi-Chuan LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING PILLAR-SHAPED SEMICONDUCTOR DEVICE
- Publication number 20210242028
- Publication date Aug 5, 2021
- Unisantis Electronics Singapore PTE Ltd.
- Fujio MASUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20210234064
- Publication date Jul 29, 2021
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...
- Publication number 20210234070
- Publication date Jul 29, 2021
- UNM RAINFOREST INNOVATIONS
- Steven R.J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS
- Publication number 20210151564
- Publication date May 20, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH N/P BOUNDARY BUFFER
- Publication number 20210118743
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Romain Lallement
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Blocking Layer for Multi-Gate Devices and Fabrication Met...
- Publication number 20210082686
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Che CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH STRAINED SUPERLATTICE AS SOURCE/DRAIN REGION
- Publication number 20210057579
- Publication date Feb 25, 2021
- UNITED MICROELECTRONICS CORP.
- Bo-Shiun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH N/P BOUNDARY BUFFER
- Publication number 20200350212
- Publication date Nov 5, 2020
- International Business Machines Corporation
- Romain Lallement
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED SUBSTRATE FOR MICROELECTRONIC DEVICES
- Publication number 20200258738
- Publication date Aug 13, 2020
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DICHALCOGENIDE THIN FILM, METHOD FOR MANUFACTURING...
- Publication number 20200181768
- Publication date Jun 11, 2020
- Korea Advanced Institute of Science and Technology
- Sung-Yool CHOI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...
- Publication number 20200123677
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Alexander Reznicek
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Structures Which Include Laminates of First and Secon...
- Publication number 20200066516
- Publication date Feb 27, 2020
- Micron Technology, Inc.
- Manuj Nahar
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Semiconductor Component
- Publication number 20200027969
- Publication date Jan 23, 2020
- INFINEON TECHNOLOGIES AG
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...
- Publication number 20200006597
- Publication date Jan 2, 2020
- STC.UNM
- Steven R.J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (IT...
- Publication number 20190319135
- Publication date Oct 17, 2019
- ATOMERA INCORPORATED
- ROBERT JOHN STEPHENSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (ITFET) INCLUDING A SUPE...
- Publication number 20190319136
- Publication date Oct 17, 2019
- ATOMERA INCORPORATED
- ROBERT JOHN STEPHENSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT
- Publication number 20190245061
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Chieh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SEMICONDUCTOR STRUCTURE WITH INNER SPACER FORMED BY OXIDA...
- Publication number 20190189741
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE STRUCTURE HAVING NANOBUBBLES AND METHOD OF FABRICATING THE...
- Publication number 20190169031
- Publication date Jun 6, 2019
- Samsung Electronics Co., Ltd.
- Jiyeon KU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NANO FLAKE DEFECT PASSIVATION METHOD AND ELECTRONIC DEVICE MANUFACT...
- Publication number 20190131201
- Publication date May 2, 2019
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Sun Jin YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SEMICONDUCTOR STRUCTURE WITH INNER SPACER FORMED BY OXIDA...
- Publication number 20190109191
- Publication date Apr 11, 2019
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial blocking layer for multi-gate devices and fabrication met...

Strain relief trenches for epitaxial growth

Method for manufacturing pillar-shaped semiconductor device

Three-dimensionally stretchable single crystalline semiconductor me...

Method for making an inverted T channel field effect transistor (IT...

Transistor structure with N/P boundary buffer

Leakage-free implantation-free ETSOI transistors

Epitaxial blocking layer for multi-gate devices and fabrication met...

Method for producing different populations of molecules or fine par...

Layered substrate for microelectronic devices

Melt-growth of single-crystal alloy semiconductor structures and se...

Semiconductor arrangement

Method for producing a semiconductor component

Transistor with strained superlattice as source/drain region

Method of fabricating graphene structure having nanobubbles

Crystalline multilayer structure and semiconductor device

Film formation method, vacuum processing apparatus, method of manuf...

Growth of cubic crystalline phase structure on silicon substrates a...

Leakage-free implantation-free ETSOI transistors

Transistor structure with n/p boundary buffer

Inverted T channel field effect transistor (ITFET) including a supe...

Solid phase epitaxy of 3C-SiC on Si(001)

Leakage-free implantation-free ETSOI transistors

Growth of cubic crystalline phase structure on silicon substrates a...

Laser irradiation induced surface planarization of polycrystalline...

Nanosheet semiconductor structure with inner spacer formed by oxida...

Method of fabricating device including two-dimensional material

Nano flake defect passivation method and electronic device manufact...

Method of fabricating device including two-dimensional material

Nano-imprinting using high-pressure crystal phase transformations

Patents Applicationslast 30 patents

EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION MET...

LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD

METHOD FOR PRODUCING LAMINATE, PRODUCING APPARATUS FOR LAMINATE, LA...

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH

METHODS OF FORMING SILICON GERMANIUM STRUCTURES

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

Epitaxial Blocking Layer for Multi-Gate Devices and Fabrication Met...

STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH

METHOD FOR MANUFACTURING PILLAR-SHAPED SEMICONDUCTOR DEVICE

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...

LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS

TRANSISTOR STRUCTURE WITH N/P BOUNDARY BUFFER

Epitaxial Blocking Layer for Multi-Gate Devices and Fabrication Met...

TRANSISTOR WITH STRAINED SUPERLATTICE AS SOURCE/DRAIN REGION

TRANSISTOR STRUCTURE WITH N/P BOUNDARY BUFFER

LAYERED SUBSTRATE FOR MICROELECTRONIC DEVICES

TRANSITION METAL DICHALCOGENIDE THIN FILM, METHOD FOR MANUFACTURING...

THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...

Semiconductor Structures Which Include Laminates of First and Secon...

Method for Producing a Semiconductor Component

GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...

METHOD FOR MAKING AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (IT...

INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (ITFET) INCLUDING A SUPE...

SEMICONDUCTOR ARRANGEMENT

NANOSHEET SEMICONDUCTOR STRUCTURE WITH INNER SPACER FORMED BY OXIDA...

GRAPHENE STRUCTURE HAVING NANOBUBBLES AND METHOD OF FABRICATING THE...

NANO FLAKE DEFECT PASSIVATION METHOD AND ELECTRONIC DEVICE MANUFACT...

NANOSHEET SEMICONDUCTOR STRUCTURE WITH INNER SPACER FORMED BY OXIDA...