Structures with periodic or quasi periodic potential variation

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H01L29/15

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/15Structures with periodic or quasi periodic potential variation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with O18 enriched monol...
- Patent number 12,199,148
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 12,199,180
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and semiconductor device
- Patent number 12,176,430
- Issue date Dec 24, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bottom dielectric isolation layers
- Patent number 12,170,230
- Issue date Dec 17, 2024
- Applied Materials, Inc.
- SanKuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device-including source and drain regions and superla...
- Patent number 12,166,081
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility group-III nitride transistors with strained channels
- Patent number 12,159,929
- Issue date Dec 3, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with multiple threshold voltage offerings...
- Patent number 12,142,640
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making gate-all-around (GAA) device including a superlat...
- Patent number 12,142,641
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with offset source/drai...
- Patent number 12,142,662
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced cascade field effect transistor
- Patent number 12,132,102
- Issue date Oct 29, 2024
- Purdue Research Foundation
- Tillmann C. Kubis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 12,119,380
- Issue date Oct 15, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 12,107,126
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide device with impact ionization
- Patent number 12,095,006
- Issue date Sep 17, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,087,880
- Issue date Sep 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising p-type N-face GAN-based semicond...
- Patent number 12,080,786
- Issue date Sep 3, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,080,764
- Issue date Sep 3, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy structure
- Patent number 12,051,724
- Issue date Jul 30, 2024
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and method thereof
- Patent number 12,051,756
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 12,046,639
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 12,046,640
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice structure including two-dimensional material and devic...
- Patent number 12,034,049
- Issue date Jul 9, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) semiconductor devices including a ground plane...
- Patent number 12,020,926
- Issue date Jun 25, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 12,014,923
- Issue date Jun 18, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a fin-shaped active region and a gate ele...
- Patent number 12,015,086
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING LAYER
- Publication number 20250015137
- Publication date Jan 9, 2025
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING...
- Publication number 20250014896
- Publication date Jan 9, 2025
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20250006794
- Publication date Jan 2, 2025
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIN AS NUCLEAR SPIN QUBIT IN SILICON
- Publication number 20240413226
- Publication date Dec 12, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Wayne Witzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...
- Publication number 20240387639
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...
- Publication number 20240379765
- Publication date Nov 14, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD PLATE FOR DRIFT REG...
- Publication number 20240379766
- Publication date Nov 14, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...
- Publication number 20240379824
- Publication date Nov 14, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION
- Publication number 20240379877
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...
- Publication number 20240371943
- Publication date Nov 7, 2024
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUBIT ARRAY REPARATION
- Publication number 20240371967
- Publication date Nov 7, 2024
- ColdQuanta, Inc.
- Dana Zachary Anderson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GAN-BASED HEMT DEVICE, DEVICE EPITAXIAL STRUCTURE, AND PREPARATION...
- Publication number 20240355916
- Publication date Oct 24, 2024
- Genettice (Qingdao) Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE AND METHOD THEREOF
- Publication number 20240339547
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yun LI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20240322005
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20240322014
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20240321575
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS
- Publication number 20240321981
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENC...
- Publication number 20240322015
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING S...
- Publication number 20240322025
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20240304443
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING RADIO FREQUENCY SILICON-ON-INSULATOR (RFSOI) STRU...
- Publication number 20240304493
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A HETEROSTRUCTURE FOR A HIGH ELECTRON MOBILITY TRANSISTOR AND A MET...
- Publication number 20240304715
- Publication date Sep 12, 2024
- SWEGAN AB
- Jr-Tai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290888
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240266402
- Publication date Aug 8, 2024
- Samsung Electronics Co., Ltd.
- Taegon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240266469
- Publication date Aug 8, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE
- Publication number 20240266403
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...
- Publication number 20240266405
- Publication date Aug 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240258379
- Publication date Aug 1, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240258460
- Publication date Aug 1, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS

Structures with periodic or quasi periodic potential variation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial oxide materials, structures, and devices

Semiconductor device including superlattice with O18 enriched monol...

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor structure and semiconductor device

Methods of forming bottom dielectric isolation layers

Semiconductor device-including source and drain regions and superla...

High mobility group-III nitride transistors with strained channels

Epitaxial oxide materials, structures, and devices

Semiconductor structures with multiple threshold voltage offerings...

Method for making nanostructure transistors with flush source/drain...

Method for making gate-all-around (GAA) device including a superlat...

Method for making nanostructure transistors with offset source/drai...

Electronic device with gallium nitride transistors and method of ma...

Enhanced cascade field effect transistor

Method and epitaxial oxide device with impact ionization

Method for making semiconductor device including superlattice with...

Steep sloped vertical tunnel field-effect transistor

Epitaxial oxide device with impact ionization

Epitaxial oxide materials, structures, and devices

Semiconductor structure comprising p-type N-face GAN-based semicond...

Semiconductor structure

Semiconductor epitaxy structure

Flash memory device and method thereof

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Superlattice structure including two-dimensional material and devic...

Radio frequency (RF) semiconductor devices including a ground plane...

Methods for making radio frequency (RF) semiconductor devices inclu...

Semiconductor device with a fin-shaped active region and a gate ele...

Patents Applicationslast 30 patents

MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING LAYER

METHOD FOR MAKING MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

TIN AS NUCLEAR SPIN QUBIT IN SILICON

SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...

SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...

DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD PLATE FOR DRIFT REG...

METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...

SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION

SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

QUBIT ARRAY REPARATION

GAN-BASED HEMT DEVICE, DEVICE EPITAXIAL STRUCTURE, AND PREPARATION...

FLASH MEMORY DEVICE AND METHOD THEREOF

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENC...

NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING S...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

METHOD FOR MAKING RADIO FREQUENCY SILICON-ON-INSULATOR (RFSOI) STRU...

A HETEROSTRUCTURE FOR A HIGH ELECTRON MOBILITY TRANSISTOR AND A MET...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

EPITAXIAL OXIDE TRANSISTOR

BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE

III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...

SEMICONDUCTOR DEVICE

EPITAXIAL OXIDE TRANSISTOR