Sulfides

Industry

CPC
H01L45/142

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/142Sulfides

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and storage unit with a chalcogen element
- Patent number 11,522,132
- Issue date Dec 6, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device having a resistance change layer and a pl...
- Patent number 11,482,667
- Issue date Oct 25, 2022
- SK Hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with resistance change memory element a...
- Patent number 11,482,572
- Issue date Oct 25, 2022
- Kioxia Corporation
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material implication operations in memory
- Patent number 11,475,951
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal filament memory cells
- Patent number 11,430,949
- Issue date Aug 30, 2022
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory devices implementing two-dimensional tra...
- Patent number 11,393,980
- Issue date Jul 19, 2022
- Samsung Electronics Co., Ltd.
- Hideki Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 11,393,748
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon-based volatile and non-volatile memristors
- Patent number 11,393,976
- Issue date Jul 19, 2022
- Massachusetts Institute of Technology
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with selector layer and methods of forming the same
- Patent number 11,342,380
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nonvolatile memory device having resistance chang...
- Patent number 11,309,354
- Issue date Apr 19, 2022
- SK hynix Inc.
- Jae Hyun Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Arrays of memory cells and methods of forming an array of verticall...
- Patent number 11,276,733
- Issue date Mar 15, 2022
- Micron Technology, Inc.
- Zengtao T. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppressing oxidation of silicon germanium selenium arsenide material
- Patent number 11,271,155
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Projected memory device with carbon-based projection component
- Patent number 11,251,370
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Drift mitigation with embedded refresh
- Patent number 11,217,322
- Issue date Jan 4, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device including silicon capping pattern
- Patent number 11,171,287
- Issue date Nov 9, 2021
- Samsung Electronics Co., Ltd.
- Jong-Uk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 11,133,463
- Issue date Sep 28, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nearly 2D electronic microparticles
- Patent number 11,121,176
- Issue date Sep 14, 2021
- Massachusetts Institute of Technology
- Tianxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide memory device components and composition
- Patent number 11,114,615
- Issue date Sep 7, 2021
- Micron Technology, Inc.
- Enrico Varesi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile resistive memory device and manufacturing method thereof
- Patent number 11,101,321
- Issue date Aug 24, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Writam Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch vertical field effect transistor
- Patent number 11,069,744
- Issue date Jul 20, 2021
- International Business Machines Corporation
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,037,988
- Issue date Jun 15, 2021
- Samsung Electronics Co., Ltd.
- Jong Uk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,011,579
- Issue date May 18, 2021
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material implication operations in memory
- Patent number 10,910,052
- Issue date Feb 2, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory unit
- Patent number 10,879,312
- Issue date Dec 29, 2020
- Sony Corporation
- Hiroaki Sei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metallic conductive filament and a random acces...
- Patent number 10,879,460
- Issue date Dec 29, 2020
- Univerzita Pardubice
- Tomas Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive bridge random access memory (CBRAM) devices with low the...
- Patent number 10,868,246
- Issue date Dec 15, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 10,868,248
- Issue date Dec 15, 2020
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising silver
- Patent number 10,862,030
- Issue date Dec 8, 2020
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...
- Publication number 20230403956
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin I WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING
- Publication number 20230301207
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS
- Publication number 20230189672
- Publication date Jun 15, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
- Publication number 20230088249
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Wooyoung YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...
- Publication number 20230082400
- Publication date Mar 16, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...
- Publication number 20230030949
- Publication date Feb 2, 2023
- Korea Advanced Institute of Science and Technology
- Heejun YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS...
- Publication number 20230004803
- Publication date Jan 5, 2023
- Northwestern University
- Mark C. Hersam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY...
- Publication number 20220367568
- Publication date Nov 17, 2022
- KIOXIA Corporation
- Ryu OGIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
Stack of Horizontally Extending and Vertically Overlapping Features...
- Publication number 20220302015
- Publication date Sep 22, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE CHANGE DEVICE AND STORAGE DEVICE
- Publication number 20220302385
- Publication date Sep 22, 2022
- KIOXIA Corporation
- Takao KOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE AND STORAGE UNIT
- Publication number 20220293855
- Publication date Sep 15, 2022
- Sony Semiconductor Solutions Corporation
- Tetsuya MIZUGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
A Resistive Memory Device Structure Based on Stacked Layers Of Nano...
- Publication number 20220278276
- Publication date Sep 1, 2022
- Agency for Science, Technology and Research
- Henry MEDINA SILVA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME
- Publication number 20220262861
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arrays of Memory Cells and Methods of Forming an Array of Verticall...
- Publication number 20220157888
- Publication date May 19, 2022
- Micron Technology, Inc.
- Zengtao T. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
- Publication number 20220123209
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC SYNAPTIC DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220093854
- Publication date Mar 24, 2022
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT
- Publication number 20220093853
- Publication date Mar 24, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Two Dimensional Materials for Use in Ultra High Density Information...
- Publication number 20220085287
- Publication date Mar 17, 2022
- Northeastern University
- Zachariah Boston HENNIGHAUSEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20220059763
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT
- Publication number 20220052256
- Publication date Feb 17, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSITION METAL DICHALCOGENIDE (TMD) LAYER STACK FOR TRANSISTOR AP...
- Publication number 20210408375
- Publication date Dec 30, 2021
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20210375989
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20210296400
- Publication date Sep 23, 2021
- KIOXIA Corporation
- Tsunehiro INO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL
- Publication number 20210288251
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...
- Publication number 20210257413
- Publication date Aug 19, 2021
- KIOXIA Corporation
- Hiroyuki KANAYA
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTION ELEMENT
- Publication number 20210249599
- Publication date Aug 12, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Gabriele Navarro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-Based Volatile and Non-Volatile Memristors
- Publication number 20210217952
- Publication date Jul 15, 2021
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED STRUCTURE AND METHOD OF MANUFACTURING SAME, AND SEMICONDUCT...
- Publication number 20210202839
- Publication date Jul 1, 2021
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Junji Tominaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE HAVING RESISTANCE CHANG...
- Publication number 20210202577
- Publication date Jul 1, 2021
- SK HYNIX INC.
- Jae Hyun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICES
- Publication number 20210167285
- Publication date Jun 3, 2021
- Samsung Electronics Co., Ltd.
- Hideki HORII
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic synaptic device and method for manufacturing same

Tapered memory cell profiles

Storage device and storage unit with a chalcogen element

Nonvolatile memory device having a resistance change layer and a pl...

Semiconductor memory device with resistance change memory element a...

Material implication operations in memory

Metal filament memory cells

Variable resistance memory devices implementing two-dimensional tra...

Stack of horizontally extending and vertically overlapping features...

Carbon-based volatile and non-volatile memristors

Memory devices with selector layer and methods of forming the same

Three-dimensional nonvolatile memory device having resistance chang...

Arrays of memory cells and methods of forming an array of verticall...

Suppressing oxidation of silicon germanium selenium arsenide material

Projected memory device with carbon-based projection component

Drift mitigation with embedded refresh

Variable resistance memory device including silicon capping pattern

Memory cells with asymmetrical electrode interfaces

Nearly 2D electronic microparticles

Chalcogenide memory device components and composition

Nonvolatile resistive memory device and manufacturing method thereof

Steep-switch vertical field effect transistor

Semiconductor device

Cross-point memory and methods for fabrication of same

Material implication operations in memory

Memory device and memory unit

Method of forming a metallic conductive filament and a random acces...

Conductive bridge random access memory (CBRAM) devices with low the...

Tapered memory cell profiles

Semiconductor devices comprising silver

Patents Applicationslast 30 patents

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...

PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...

SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...

RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS...

MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY...

Stack of Horizontally Extending and Vertically Overlapping Features...

RESISTANCE CHANGE DEVICE AND STORAGE DEVICE

STORAGE DEVICE AND STORAGE UNIT

A Resistive Memory Device Structure Based on Stacked Layers Of Nano...

MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME

Arrays of Memory Cells and Methods of Forming an Array of Verticall...

SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES

ELECTRONIC SYNAPTIC DEVICE AND METHOD FOR MANUFACTURING SAME

PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT

Two Dimensional Materials for Use in Ultra High Density Information...

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

PROJECTED MEMORY DEVICE WITH CARBON-BASED PROJECTION COMPONENT

TRANSITION METAL DICHALCOGENIDE (TMD) LAYER STACK FOR TRANSISTOR AP...

MEMORY DEVICES AND METHODS OF FORMING THE SAME

MEMORY DEVICE

SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...

SELECTION ELEMENT

Carbon-Based Volatile and Non-Volatile Memristors

STACKED STRUCTURE AND METHOD OF MANUFACTURING SAME, AND SEMICONDUCT...

THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE HAVING RESISTANCE CHANG...

VARIABLE RESISTANCE MEMORY DEVICES