Surface structure

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H01L21/0243

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/0243Surface structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate, semiconductor device, and method for manufacturing laminate
- Patent number 12,154,952
- Issue date Nov 26, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi Hashigami
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,148,613
- Issue date Nov 19, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with semiconductor-on-insulator region and...
- Patent number 12,131,904
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon epitaxial wafer production method and silicon epitaxial wafer
- Patent number 12,119,375
- Issue date Oct 15, 2024
- Sumco Corporation
- Masayuki Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonpolar or semipolar group III-nitride substrates
- Patent number 12,106,959
- Issue date Oct 1, 2024
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cells for a solar cell array
- Patent number 12,100,774
- Issue date Sep 24, 2024
- The Boeing Company
- Eric Rehder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device with semiconductor ca...
- Patent number 12,094,757
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, method of manufacturing the epitaxial wafer, diode...
- Patent number 12,087,868
- Issue date Sep 10, 2024
- South China Normal University
- Richard Notzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dividing a bar of one or more devices
- Patent number 12,087,577
- Issue date Sep 10, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Monolayer graphene on non-polar face SiC substrate and control meth...
- Patent number 12,051,585
- Issue date Jul 30, 2024
- Tianjin University
- Lei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing semiconductor...
- Patent number 12,046,478
- Issue date Jul 23, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Luguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate substrate, freestanding substrate, method for manufacturin...
- Patent number 12,040,362
- Issue date Jul 16, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,033,854
- Issue date Jul 9, 2024
- Soitec
- Yann Sinquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride-based high electron mobility trans...
- Patent number 12,002,880
- Issue date Jun 4, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing a substrate for a sem...
- Patent number 12,002,859
- Issue date Jun 4, 2024
- Jenoptik Optical Systems GmbH
- Jos Boschker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate, semiconductor device, and method for manufacturing laminate
- Patent number 11,990,521
- Issue date May 21, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi Hashigami
- C01 - INORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS
- Publication number 20240404824
- Publication date Dec 5, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20240395543
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Hisashi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240389313
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
- Publication number 20240332365
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240332011
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
- Publication number 20240332362
- Publication date Oct 3, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240313086
- Publication date Sep 19, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...
- Publication number 20240312779
- Publication date Sep 19, 2024
- FILNEX INC.
- Mitsuhiko OGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20240266184
- Publication date Aug 8, 2024
- NANYA TECHNOLOGY CORPORATION
- HSUAN-WU LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...
- Publication number 20240250115
- Publication date Jul 25, 2024
- Shin-Etsu Chemical Co., Ltd.
- Takenori WATABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Stacked Layers and Devices Formed Thereof
- Publication number 20240243011
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER
- Publication number 20240213022
- Publication date Jun 27, 2024
- ASM IP HOLDING B.V.
- Brendan Marozas
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING LAMINATE, PRODUCING APPARATUS FOR LAMINATE, LA...
- Publication number 20240177993
- Publication date May 30, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi HASHIGAMI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...
- Publication number 20240153763
- Publication date May 9, 2024
- Massachusetts Institute of Technology
- Rachael L. Myers-Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-GAN HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240154021
- Publication date May 9, 2024
- NATIONAL SUN YAT-SEN UNIVERSITY
- TING-CHANG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...
- Publication number 20240145592
- Publication date May 2, 2024
- Intel Corporation
- Anand S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...
- Publication number 20240096619
- Publication date Mar 21, 2024
- ASM IP HOLDING, B.V.
- Brendan Timothy Padraig Marozas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20240088284
- Publication date Mar 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...
- Publication number 20240087888
- Publication date Mar 14, 2024
- ASM IP HOLDING, B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240079486
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240071756
- Publication date Feb 29, 2024
- SUMCO CORPORATION
- Koji MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240063016
- Publication date Feb 22, 2024
- SINO NITRIDE SEMICONDUCTOR CO., LTD.
- Junjie REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE HAVING A STRUCTURED SURFACE, AND S...
- Publication number 20240055267
- Publication date Feb 15, 2024
- ams-OSRAM International GmbH
- Andreas Lex
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...
- Publication number 20240047207
- Publication date Feb 8, 2024
- Christian Zmoelnig
- C30 - CRYSTAL GROWTH

Surface structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and a substrate for a semiconductor device

Ground substrate and method for producing same

III-nitride-based semiconductor devices on patterned substrates and...

Laminate, semiconductor device, and method for manufacturing laminate

Semiconductor structures and manufacturing methods thereof

Semiconductor structure with semiconductor-on-insulator region and...

Nitride semiconductor template, method for manufacturing nitride se...

Method of manufacturing nitride semiconductor light-emitting element

Biaxially oriented SiC composite substrate and semiconductor device...

Semiconductor light-emitting element and method of producing the same

Silicon epitaxial wafer production method and silicon epitaxial wafer

Nonpolar or semipolar group III-nitride substrates

Nitride semiconductor structure, nitride semiconductor device, and...

Solar cells for a solar cell array

Method for manufacturing semiconductor device with semiconductor ca...

Epitaxial wafer, method of manufacturing the epitaxial wafer, diode...

Method for dividing a bar of one or more devices

SiC composite substrate including biaxially oreinted SiC layer and...

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a SiC substrate by simultaneously forming...

Monolayer graphene on non-polar face SiC substrate and control meth...

Manufacturing method for semiconductor silicon wafer

Semiconductor structure and method for manufacturing semiconductor...

Laminate substrate, freestanding substrate, method for manufacturin...

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a composite structure comprising a thin la...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Method for manufacturing nitride-based high electron mobility trans...

Semiconductor device and method for producing a substrate for a sem...

Laminate, semiconductor device, and method for manufacturing laminate

Patents Applicationslast 30 patents

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS

WAFER AND SEMICONDUCTOR DEVICE

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...

LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...

Methods for Forming Stacked Layers and Devices Formed Thereof

METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER

METHOD FOR PRODUCING LAMINATE, PRODUCING APPARATUS FOR LAMINATE, LA...

SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...

P-GAN HIGH-ELECTRON-MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE

METHOD FOR PRODUCING A SUBSTRATE HAVING A STRUCTURED SURFACE, AND S...

Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...