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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7853the body having a non-rectangular crossection

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Fin smoothing and integrated circuit structures resulting therefrom
- Patent number 12,237,420
- Issue date Feb 25, 2025
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including multi-width semiconductor fins
- Patent number 12,230,633
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an oxide volume within a fin
- Patent number 12,224,202
- Issue date Feb 11, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium-dope...
- Patent number 12,166,124
- Issue date Dec 10, 2024
- Intel Corporation
- Ryan Hickey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with buried power rail, integrated circuit...
- Patent number 12,165,927
- Issue date Dec 10, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer
- Patent number 12,166,129
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having source or drai...
- Patent number 12,159,901
- Issue date Dec 3, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,962
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,902
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETs and methods of forming FETs
- Patent number 12,094,761
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer features for multi-gate transistors
- Patent number 12,087,842
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including passivation patterns
- Patent number 12,080,767
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Sung Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,075,607
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extension of nanocomb transistor arrangements to implement gate all...
- Patent number 12,068,206
- Issue date Aug 20, 2024
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,068,394
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,057,491
- Issue date Aug 6, 2024
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 12,046,638
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor structure and semiconductor s...
- Patent number 12,029,026
- Issue date Jul 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xiaoling Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS
- Publication number 20250056831
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250048678
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20250006549
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240397692
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS
- Publication number 20240379822
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240363730
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240355903
- Publication date Oct 24, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...
- Publication number 20240355682
- Publication date Oct 24, 2024
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME
- Publication number 20240313116
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Hao KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME
- Publication number 20240306360
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20240304730
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONLINEAR CHANNEL
- Publication number 20240282860
- Publication date Aug 22, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20240274718
- Publication date Aug 15, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME
- Publication number 20240266399
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED SOURCE/DRAIN FEATURES
- Publication number 20240258429
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-An Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240250144
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- Byounghoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240234575
- Publication date Jul 11, 2024
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN...
- Publication number 20240234548
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FORKSHEET TRANSISTORS
- Publication number 20240234422
- Publication date Jul 11, 2024
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including FINFET Structures with Increased Ga...
- Publication number 20240224487
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Ki-Il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20240222509
- Publication date Jul 4, 2024
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...
- Publication number 20240186403
- Publication date Jun 6, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS

the body having a non-rectangular crossection

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin smoothing and integrated circuit structures resulting therefrom

Self-aligned inner spacer on gate-all-around structure and methods...

Integrated circuit structure including multi-width semiconductor fins

Forming an oxide volume within a fin

Method for manufacturing FinFETs by fin-recessing processes to form...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor devices and method of manufacturing the same

Gate line plug structures for advanced integrated circuit structure...

Plugs for interconnect lines for advanced integrated circuit struct...

Gate-all-around integrated circuit structures having germanium-dope...

Method of manufacturing semiconductor device and associated memory...

Nanosheet channel-to-source and drain isolation

Semiconductor structure with buried power rail, integrated circuit...

Semiconductor device structure with inner spacer

Gate-all-around integrated circuit structures having source or drai...

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Nano-sheet-based devices having inner spacer structures or gate por...

Contact over active gate structures for advanced integrated circuit...

Methods for forming recesses in source/drain regions and devices fo...

FETs and methods of forming FETs

Inner spacer features for multi-gate transistors

Semiconductor device including passivation patterns

Semiconductor device

Extension of nanocomb transistor arrangements to implement gate all...

Semiconductor device and manufacturing method thereof

Gate cut and fin trim isolation for advanced integrated circuit str...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Fin field effect transistor (FinFET) device having position-depende...

Method of manufacturing semiconductor structure and semiconductor s...

Patents Applicationslast 30 patents

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

FETS and Methods of Forming FETS

NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

NONLINEAR CHANNEL

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

PROTRUSION FIELD-EFFECT TRANSISTOR AND METHODS OF MAKING THE SAME

MERGED SOURCE/DRAIN FEATURES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN...

STACKED FORKSHEET TRANSISTORS

Semiconductor Devices Including FINFET Structures with Increased Ga...

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...

TMD INVERTED NANOWIRE INTEGRATION