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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7853the body having a non-rectangular crossection

Industries

Patents Grantslast 30 patents

Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,961,892
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source/drain features
- Patent number 11,961,912
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-An Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type pattern with varying widths al...
- Patent number 11,956,937
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Ki-Il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFet) device structure and method fo...
- Patent number 11,949,014
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Barn Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,948,994
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two dimension material fin sidewall
- Patent number 11,929,286
- Issue date Mar 12, 2024
- TESSERA LLC
- Sami Rosenblatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,929,417
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,930,628
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-I Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and patterning method for multiple threshold voltages
- Patent number 11,923,430
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and methods of forming
- Patent number 11,916,124
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device having contact plugs with re-ent...
- Patent number 11,916,147
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor
- Patent number 11,908,941
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Sang U. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitance reduction for backside power rail device
- Patent number 11,901,423
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor
- Patent number 11,901,438
- Issue date Feb 13, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin shaping and integrated circuit structures resulting therefrom
- Patent number 11,901,457
- Issue date Feb 13, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,894,446
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ling-Yen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of manufacturing the same
- Patent number 11,894,463
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Seungmin Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,894,379
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor structure and method of shaping
- Patent number 11,869,973
- Issue date Jan 9, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure with various widths
- Patent number 11,862,634
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiao-Han Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivated and faceted for fin field effect transistor
- Patent number 11,855,219
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire formation
- Patent number 11,854,905
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,855,151
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136439
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device And Method Of Fabrication Thereof
- Publication number 20240105778
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE WITH VARIOUS WIDTHS
- Publication number 20240096882
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Han LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
- Publication number 20240096885
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20240096958
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20240088268
- Publication date Mar 14, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
- Publication number 20240088296
- Publication date Mar 14, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...
- Publication number 20240055497
- Publication date Feb 15, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240055527
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...
- Publication number 20240021679
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...
- Publication number 20240021705
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Structure and Method with Hybrid Orientation for...
- Publication number 20230411399
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzer-Min Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRUGATED METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20230411452
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Core-Shell Nanostructures For Semiconductor Devices
- Publication number 20230411455
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FOR HIGHLY SCALED TRANSISTORS
- Publication number 20230395687
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED INNER SPACER ON GATE-ALL-AROUND STRUCTURE AND METHODS...
- Publication number 20230387253
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Semiconductor Devices
- Publication number 20230378301
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AN OXIDE VOLUME WITHIN A FIN
- Publication number 20230377947
- Publication date Nov 23, 2023
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230378307
- Publication date Nov 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURIN COMPANY, LTD.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS
- Publication number 20230378317
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE CHANNEL SEMICONDUCTOR DEVICE
- Publication number 20230378205
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yu WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230369490
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20230361182
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20230343635
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS
- Publication number 20230335620
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVIN...
- Publication number 20230326803
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER
- Publication number 20230299204
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20230275157
- Publication date Aug 31, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230247818
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-I SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...
- Publication number 20230223460
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS

the body having a non-rectangular crossection

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Contacts for highly scaled transistors

Merged source/drain features

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor device having fin-type pattern with varying widths al...

Fin field effect transistor (FinFet) device structure and method fo...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device and method of fabricating the same

TMD inverted nanowire integration

Two dimension material fin sidewall

Contacts for highly scaled transistors

Semiconductor device and manufacturing method thereof

Gate structure and patterning method for multiple threshold voltages

Transistor gates and methods of forming

Fin field-effect transistor device having contact plugs with re-ent...

Semiconductor device having doped epitaxial region and its methods...

FinFET transistor

Capacitance reduction for backside power rail device

Nanosheet transistor

Fin shaping and integrated circuit structures resulting therefrom

Method of manufacturing a semiconductor device

Integrated circuits and methods of manufacturing the same

Semiconductor devices and method of manufacturing the same

Fin patterning for advanced integrated circuit structure fabrication

Nanowire transistor structure and method of shaping

Nanostructure with various widths

Passivated and faceted for fin field effect transistor

Wrap-around contact on FinFET

Silicon and silicon germanium nanowire formation

Multi-gate device and method of fabrication thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Multi-Gate Device And Method Of Fabrication Thereof

NANOSTRUCTURE WITH VARIOUS WIDTHS

SEMICONDUCTOR DEVICE AND FABRICATING THE SAME

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...

FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...

Integrated Circuit Structure and Method with Hybrid Orientation for...

CORRUGATED METAL OXIDE SEMICONDUCTOR TRANSISTOR

Core-Shell Nanostructures For Semiconductor Devices

CONTACTS FOR HIGHLY SCALED TRANSISTORS

SELF-ALIGNED INNER SPACER ON GATE-ALL-AROUND STRUCTURE AND METHODS...

Structure and Method for Semiconductor Devices

FORMING AN OXIDE VOLUME WITHIN A FIN

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS

WIDE CHANNEL SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

FETS and Methods of Forming FETS

INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS

METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVIN...

SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...