the capacitor and the transistor being in one trench

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H01L27/10838

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/10838the capacitor and the transistor being in one trench

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing capacitor structure and capacitor structure
- Patent number 11,651,896
- Issue date May 16, 2023
- NANYA TECHNOLOGY CORPORATION
- Chien-Chung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor assembly for high capacitance density
- Patent number 11,652,101
- Issue date May 16, 2023
- QUALCOMM Incorporated
- Jonghae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies, and methods of forming integrated assemblies
- Patent number 11,563,010
- Issue date Jan 24, 2023
- Micron Technology, Inc.
- Litao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrays of memory cells individually comprising a capacitor and an e...
- Patent number 10,676,722
- Issue date Jun 9, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Method for preparing a semiconductor memory structure
- Patent number 10,446,556
- Issue date Oct 15, 2019
- NANYA TECHNOLOGY CORPORATION
- Wei-Ming Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Arrays of memory cells individually comprising a capacitor and an e...
- Patent number 10,443,046
- Issue date Oct 15, 2019
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Capacitor-transistor strap connections for a memory cell
- Patent number 9,607,993
- Issue date Mar 28, 2017
- GLOBALFOUNDRIES Inc.
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K dielectric structure for deep trench isolation
- Patent number 9,224,740
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- Sean M. Polvino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of fin memory structure
- Patent number 7,696,040
- Issue date Apr 13, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, memory cell array and method of manufacturing a transistor
- Patent number 7,635,893
- Issue date Dec 22, 2009
- Infineon Technologies AG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to define a transistor gate of a DRAM and the transistor gat...
- Patent number 7,588,984
- Issue date Sep 15, 2009
- Nanya Technology Corporation
- Yu-Pi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin semiconductor device and method for fabricating the same
- Patent number 7,449,375
- Issue date Nov 11, 2008
- Kabushiki Kaisha Toshiba
- Mutsuo Morikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a DRAM memory cell arrangement having fin fi...
- Patent number 7,312,492
- Issue date Dec 25, 2007
- Infineon Technologies AG
- Ulrike Gruning-Von Schwerin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method for a folded bit line memory cell with vertical...
- Patent number 7,223,678
- Issue date May 29, 2007
- Micron Technology, Inc.
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin semiconductor device and method for fabricating the same
- Patent number 7,145,220
- Issue date Dec 5, 2006
- Kabushiki Kaisha Toshiba
- Mutsuo Morikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method for a folded bit line memory cell with vertical...
- Patent number 7,057,223
- Issue date Jun 6, 2006
- Micron Technology, Inc.
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and corresponding fabrication method
- Patent number 7,045,855
- Issue date May 16, 2006
- Infineon Technologies AG
- Björn Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial vertical memory cell and method of fabricating the same
- Patent number 7,033,886
- Issue date Apr 25, 2006
- Nanya Technology Corporation
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with cap structure and method of manufa...
- Patent number 7,019,349
- Issue date Mar 28, 2006
- Kabushiki Kaisha Toshiba
- Ryota Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory cell and fabricating method thereof
- Patent number 7,005,341
- Issue date Feb 28, 2006
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gate structure fin-type transistor
- Patent number 6,998,676
- Issue date Feb 14, 2006
- Kabushiki Kaisha Toshiba
- Masaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench DRAM with double-gated transistor and method of manufacturin...
- Patent number 6,977,404
- Issue date Dec 20, 2005
- Kabushiki Kaisha Toshiba
- Ryota Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial vertical memory cell and method of fabricating the same
- Patent number 6,969,881
- Issue date Nov 29, 2005
- Nanya Technology Corporation
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corner rounding process for partial vertical transistor
- Patent number 6,929,996
- Issue date Aug 16, 2005
- Nanya Technology Corporation
- Chung-Peng Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method for a folded bit line memory cell with vertical...
- Patent number 6,764,901
- Issue date Jul 20, 2004
- Micron Technology, Inc.
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET with horizontally graded channel doping
- Patent number 6,740,920
- Issue date May 25, 2004
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin memory cell and method of fabrication
- Patent number 6,664,582
- Issue date Dec 16, 2003
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method for a folded bit line memory cell with vertical...
- Patent number 6,066,869
- Issue date May 23, 2000
- Micron Technology, Inc.
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory (DRAM) semiconductor device
- Patent number 5,502,320
- Issue date Mar 26, 1996
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical one-transistor DRAM with enhanced capacitance and process...
- Patent number 5,164,917
- Issue date Nov 17, 1992
- Texas Instruments Incorporated
- Hisashi Shichijo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE...
- Publication number 20240008247
- Publication date Jan 4, 2024
- Changxin Memory Technologies, Inc.
- Xiaojie LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230422484
- Publication date Dec 28, 2023
- KIOXIA Corporation
- Tatsuki KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STR...
- Publication number 20230016905
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies, and Methods of Forming Integrated Assemblies
- Publication number 20210125997
- Publication date Apr 29, 2021
- Micron Technology, Inc.
- Litao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arrays Of Memory Cells Individually Comprising A Capacitor And An E...
- Publication number 20200017839
- Publication date Jan 16, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A SEMICONDUCTOR MEMORY STRUCTURE
- Publication number 20190198505
- Publication date Jun 27, 2019
- NANYA TECHNOLOGY CORPORATION
- WEI-MING LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR PREPARING THE SAME
- Publication number 20190198504
- Publication date Jun 27, 2019
- NANYA TECHNOLOGY CORPORATION
- WEI-MING LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH A SPLIT FUNCTION GATE
- Publication number 20080308870
- Publication date Dec 18, 2008
- QIMONDA AG
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN MEMORY STRUCTURE AND METHOD FOR FABRICATION THEREOF
- Publication number 20080296648
- Publication date Dec 4, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A 3-D CHANNEL FIELD-EFFECT TRANSISTOR AND A...
- Publication number 20080194068
- Publication date Aug 14, 2008
- QIMONDA AG
- Dietmar Temmler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN INTEGRATED CIRCUIT INCLUDING A TRANSISTOR
- Publication number 20080108199
- Publication date May 8, 2008
- Ulrike Gruning-Von Schwerin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to define a transistor gate of a DRAM and the transistor gat...
- Publication number 20070264788
- Publication date Nov 15, 2007
- NANYA TECHNOLOGY CORPORATION
- Yu-Pi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin semiconductor device and method for fabricating the same
- Publication number 20060244106
- Publication date Nov 2, 2006
- Kabushiki Kaisha Toshiba
- Mutsuo Morikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY CELL AND FABRICATING METHOD THEREOF
- Publication number 20060035428
- Publication date Feb 16, 2006
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a DRAM memory cell arrangement having fin fi...
- Publication number 20060006446
- Publication date Jan 12, 2006
- Ulrike Gruning-Von Schwerin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit and method for a folded bit line memory cell with vertical...
- Publication number 20060003525
- Publication date Jan 5, 2006
- Micron Technology, Inc.
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor, memory cell array and method of manufacturing a transistor
- Publication number 20050285153
- Publication date Dec 29, 2005
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device with cap structure and method of manufa...
- Publication number 20050145913
- Publication date Jul 7, 2005
- Kabushiki Kaisha Toshiba
- Ryota Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial vertical memory cell and method of fabricating the same
- Publication number 20050090064
- Publication date Apr 28, 2005
- NANYA TECHNOLOGY CORPORATION
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Corner rounding process for partial vertical transistor
- Publication number 20050042819
- Publication date Feb 24, 2005
- Chung-Peng Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial vertical memory cell and method of fabricating the same
- Publication number 20040238869
- Publication date Dec 2, 2004
- NANYA TECHNOLOGY CORPORATION
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit and method for a folded bit line memory cell with vertical...
- Publication number 20040235243
- Publication date Nov 25, 2004
- Micron Technology, Inc.
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and corresponding fabrication method
- Publication number 20040229424
- Publication date Nov 18, 2004
- Infineon Technologies AG
- Bjorn Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin semiconductor device and method for fabricating the same
- Publication number 20040195610
- Publication date Oct 7, 2004
- Mutsuo Morikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench DRAM with double-gated transistor and method of manufacturin...
- Publication number 20040150037
- Publication date Aug 5, 2004
- Ryota Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double-gate structure fin-type transistor
- Publication number 20040150071
- Publication date Aug 5, 2004
- Masaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN MEMORY CELL AND METHOD OF FABRICATION
- Publication number 20030197194
- Publication date Oct 23, 2003
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical MOSFET with horizontally graded channel doping
- Publication number 20030168687
- Publication date Sep 11, 2003
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit and method for a folded bit line memory cell with vertical...
- Publication number 20020006699
- Publication date Jan 17, 2002
- Wendell P. Noble
- H01 - BASIC ELECTRIC ELEMENTS

the capacitor and the transistor being in one trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing capacitor structure and capacitor structure

Trench capacitor assembly for high capacitance density

Integrated assemblies, and methods of forming integrated assemblies

Arrays of memory cells individually comprising a capacitor and an e...

Method for preparing a semiconductor memory structure

Arrays of memory cells individually comprising a capacitor and an e...

Capacitor-transistor strap connections for a memory cell

High-K dielectric structure for deep trench isolation

Method for fabrication of fin memory structure

Transistor, memory cell array and method of manufacturing a transistor

Method to define a transistor gate of a DRAM and the transistor gat...

Fin semiconductor device and method for fabricating the same

Method for fabricating a DRAM memory cell arrangement having fin fi...

Circuit and method for a folded bit line memory cell with vertical...

Fin semiconductor device and method for fabricating the same

Circuit and method for a folded bit line memory cell with vertical...

Semiconductor device and corresponding fabrication method

Partial vertical memory cell and method of fabricating the same

Semiconductor memory device with cap structure and method of manufa...

Dynamic random access memory cell and fabricating method thereof

Double-gate structure fin-type transistor

Trench DRAM with double-gated transistor and method of manufacturin...

Partial vertical memory cell and method of fabricating the same

Corner rounding process for partial vertical transistor

Circuit and method for a folded bit line memory cell with vertical...

Vertical MOSFET with horizontally graded channel doping

Fin memory cell and method of fabrication

Circuit and method for a folded bit line memory cell with vertical...

Dynamic random access memory (DRAM) semiconductor device

Vertical one-transistor DRAM with enhanced capacitance and process...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STR...

Integrated Assemblies, and Methods of Forming Integrated Assemblies

Arrays Of Memory Cells Individually Comprising A Capacitor And An E...

METHOD FOR PREPARING A SEMICONDUCTOR MEMORY STRUCTURE

SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR PREPARING THE SAME

INTEGRATED CIRCUIT WITH A SPLIT FUNCTION GATE

FIN MEMORY STRUCTURE AND METHOD FOR FABRICATION THEREOF

METHOD OF MANUFACTURING A 3-D CHANNEL FIELD-EFFECT TRANSISTOR AND A...

METHOD OF FORMING AN INTEGRATED CIRCUIT INCLUDING A TRANSISTOR

Method to define a transistor gate of a DRAM and the transistor gat...

Fin semiconductor device and method for fabricating the same

DYNAMIC RANDOM ACCESS MEMORY CELL AND FABRICATING METHOD THEREOF

Method for fabricating a DRAM memory cell arrangement having fin fi...

Circuit and method for a folded bit line memory cell with vertical...

Transistor, memory cell array and method of manufacturing a transistor

Semiconductor memory device with cap structure and method of manufa...

Partial vertical memory cell and method of fabricating the same

Corner rounding process for partial vertical transistor

Partial vertical memory cell and method of fabricating the same

Circuit and method for a folded bit line memory cell with vertical...

Semiconductor device and corresponding fabrication method

Fin semiconductor device and method for fabricating the same

Trench DRAM with double-gated transistor and method of manufacturin...

Double-gate structure fin-type transistor

FIN MEMORY CELL AND METHOD OF FABRICATION

Vertical MOSFET with horizontally graded channel doping

Circuit and method for a folded bit line memory cell with vertical...