the capacitor extending under transfer transistor area

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CPC
H01L27/1082

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1082the capacitor extending under transfer transistor area

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,700,726
- Issue date Jul 11, 2023
- Samsung Electronics Co., Ltd.
- Jin Sub Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,676,820
- Issue date Jun 13, 2023
- SK Hynix Inc.
- Oh-Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,670,700
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Young-Kwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,665,882
- Issue date May 30, 2023
- Kioxia Corporation
- Masaharu Wada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure having a landing area extends from first po...
- Patent number 11,665,887
- Issue date May 30, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having spacer capping pattern disposed...
- Patent number 11,665,883
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Inkyoung Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing capacitor structure and capacitor structure
- Patent number 11,651,896
- Issue date May 16, 2023
- NANYA TECHNOLOGY CORPORATION
- Chien-Chung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor assembly for high capacitance density
- Patent number 11,652,101
- Issue date May 16, 2023
- QUALCOMM Incorporated
- Jonghae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,646,225
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Myeong-Dong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having a channel provided on a memory unit
- Patent number 11,647,625
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Jaeho Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure having a hexagonal shaped bit line contact dispose...
- Patent number 11,641,735
- Issue date May 2, 2023
- NANYA TECHNOLOGY CORPORATION
- Yu-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus comprising compensation capacitors
- Patent number 11,637,105
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Shigeru Sugioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device using different crystallinities in stor...
- Patent number 11,631,677
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Daeyoung Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,679
- Issue date Apr 18, 2023
- United Microelectronics Corp.
- Luo-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays comprising memory cells
- Patent number 11,631,678
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,626,408
- Issue date Apr 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shuai Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,626,501
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- In Yeal Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having buried gates
- Patent number 11,626,409
- Issue date Apr 11, 2023
- Samsung Electronis Co., Ltd.
- Huijung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with self-aligned landi...
- Patent number 11,621,265
- Issue date Apr 4, 2023
- NANYA TECHNOLOGY CORPORATION
- Te-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried word line structure and manufacturing method thereof
- Patent number 11,610,892
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Chang-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming semiconductor devices
- Patent number 11,610,896
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Daeik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device using multipe photolitho...
- Patent number 11,610,898
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Hyun-Chul Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory and method for manufacturing the dram...
- Patent number 11,610,611
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Ting-Ting Ke
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including insulating layers and method of manu...
- Patent number 11,605,714
- Issue date Mar 14, 2023
- Samsung Electronics Co., Ltd.
- Dong Kak Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,600,667
- Issue date Mar 7, 2023
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,600,621
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Kyooho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,600,570
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Hyo-Sub Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,594,538
- Issue date Feb 28, 2023
- Samsung Electronics Co., Ltd.
- Sang Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite dielectric structure and method...
- Patent number 11,594,539
- Issue date Feb 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH PERIPHERAL GATE STRUCTURE AND METHOD FOR...
- Publication number 20240130102
- Publication date Apr 18, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240107743
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- Junhyeok AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED HORIZONTAL CELL ARCHITECTURE FOR MEMORY DEVICES
- Publication number 20240107748
- Publication date Mar 28, 2024
- Micron Technology, Inc.
- William M. Brewer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRANGEMENTS FOR MEMORY WITH ONE ACCESS TRANSISTOR FOR MULTIPLE CAP...
- Publication number 20240107749
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240098978
- Publication date Mar 21, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH BURIED GATE STRUCTURES AND METHOD FOR PRE...
- Publication number 20240088248
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SUPPORTING LAYER AND METHOD FOR FABRICATI...
- Publication number 20240090198
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- LIANG-PIN CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYS...
- Publication number 20240081048
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Yuri Ishizaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES
- Publication number 20240074153
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Daniel Billingsley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF
- Publication number 20240074152
- Publication date Feb 29, 2024
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240064960
- Publication date Feb 22, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED STORAGE NODES AND ACCESS DEVICES WITH HORIZONTAL...
- Publication number 20240064966
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING STRUCTURES IN MEMORY ARRAY REGION AND PERIP...
- Publication number 20240064972
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240057315
- Publication date Feb 15, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD
- Publication number 20240055523
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED CHANNEL FIN INTEGRATION
- Publication number 20240057317
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Sangmin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240057318
- Publication date Feb 15, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Li-Peng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS WITH REDUCED PARASITICS
- Publication number 20240055524
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION
- Publication number 20240049443
- Publication date Feb 8, 2024
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240049451
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- YU-TING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE
- Publication number 20240032278
- Publication date Jan 25, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPACITOR AND METHOD FOR FORMING THE SAME
- Publication number 20240030359
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SHU-HUI SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOUBLE BIT CAPACITY AND METHOD FOR MANU...
- Publication number 20240023312
- Publication date Jan 18, 2024
- NANYA TECHNOLOGY CORPORATION
- YING-CHIEH LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING BURIED GATE ST...
- Publication number 20240015947
- Publication date Jan 11, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PASSING GATE
- Publication number 20240015951
- Publication date Jan 11, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240015952
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY ACCESS TRANSISTOR WITH...
- Publication number 20240008253
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL DYNAMIC RANDOM ACCESS MEMORY WITH STACKED SEMICON...
- Publication number 20240008259
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230422466
- Publication date Dec 28, 2023
- Changxin Memory Technologies, Inc.
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS

the capacitor extending under transfer transistor area

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device

Minimizing shorting between FinFET epitaxial regions

Semiconductor memory device

Semiconductor structure having a landing area extends from first po...

Semiconductor memory device having spacer capping pattern disposed...

Method of manufacturing capacitor structure and capacitor structure

Trench capacitor assembly for high capacitance density

Semiconductor devices and methods of fabricating the same

Memory device having a channel provided on a memory unit

Memory structure having a hexagonal shaped bit line contact dispose...

Apparatus comprising compensation capacitors

Semiconductor memory device using different crystallinities in stor...

Semiconductor device

Memory arrays comprising memory cells

Memory device and forming method thereof

Semiconductor device and method for fabricating the same

Semiconductor devices having buried gates

Method for fabricating semiconductor device with self-aligned landi...

Buried word line structure and manufacturing method thereof

Semiconductor devices and methods of forming semiconductor devices

Method of fabricating semiconductor device using multipe photolitho...

Dynamic random access memory and method for manufacturing the dram...

Semiconductor device including insulating layers and method of manu...

Method to produce 3D semiconductor devices and structures with memory

Semiconductor memory device and method of fabricating the same

Semiconductor memory device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device with composite dielectric structure and method...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH PERIPHERAL GATE STRUCTURE AND METHOD FOR...

SEMICONDUCTOR DEVICE

STAGGERED HORIZONTAL CELL ARCHITECTURE FOR MEMORY DEVICES

ARRANGEMENTS FOR MEMORY WITH ONE ACCESS TRANSISTOR FOR MULTIPLE CAP...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

SEMICONDUCTOR DEVICE WITH BURIED GATE STRUCTURES AND METHOD FOR PRE...

SEMICONDUCTOR DEVICE WITH SUPPORTING LAYER AND METHOD FOR FABRICATI...

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYS...

CONDUCTIVE STRUCTURES

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

VERTICALLY STACKED STORAGE NODES AND ACCESS DEVICES WITH HORIZONTAL...

MEMORY DEVICE INCLUDING STRUCTURES IN MEMORY ARRAY REGION AND PERIP...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD

RECESSED CHANNEL FIN INTEGRATION

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

FINFETS WITH REDUCED PARASITICS

DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

MEMORY STRUCTURE

SEMICONDUCTOR DEVICE WITH CAPACITOR AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE HAVING DOUBLE BIT CAPACITY AND METHOD FOR MANU...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING BURIED GATE ST...

SEMICONDUCTOR DEVICE WITH PASSING GATE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY ACCESS TRANSISTOR WITH...

THREE-DIMENSIONAL DYNAMIC RANDOM ACCESS MEMORY WITH STACKED SEMICON...

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF