the conductive layers comprising silicides

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H01L21/28518

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28518the conductive layers comprising silicides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 12,183,639
- Issue date Dec 31, 2024
- SK keyfoundry Inc.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom lateral expansion of contact plugs through implantation
- Patent number 12,183,632
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power rail structure and methods of forming same
- Patent number 12,183,678
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,176,290
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Sungyu Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive structures and methods of formation
- Patent number 12,170,331
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for semiconductor devices
- Patent number 12,170,335
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,170,325
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming same
- Patent number 12,159,868
- Issue date Dec 3, 2024
- SEMICONDUCTOR MANUFACTURING NORTH CHINA (BEIJING) CORPORATION
- Cai Qiaoming
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,902
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,148,837
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures with stacked metal silicide layers for...
- Patent number 12,148,807
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 12,148,813
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor local interconnects
- Patent number 12,148,702
- Issue date Nov 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different via configurations for different via interface requirements
- Patent number 12,142,565
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,655
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a contact to source/drain layers and f...
- Patent number 12,131,990
- Issue date Oct 29, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing semiconductor de...
- Patent number 12,132,001
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Yong Kong Siew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and forming method thereof
- Patent number 12,125,896
- Issue date Oct 22, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 12,125,886
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact plug
- Patent number 12,125,748
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memories having vertically stacked conductive filled structures
- Patent number 12,114,492
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fin profile control to enlarge gate process window
- Patent number 12,113,122
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid isolation regions having upper and lower portions with seams
- Patent number 12,112,988
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...
- Publication number 20250006561
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Via and Dual Side Power Rail For Epitaxial Source/Drain St...
- Publication number 20250006557
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20240429292
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Filling Openings with Conductive Material, and Assemblie...
- Publication number 20240407160
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SILICIDE PROCESS USING RUTHENIUM SILICIDE
- Publication number 20240404888
- Publication date Dec 5, 2024
- Applied Materuals, Inc.
- Thomas Anthony Empante
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405090
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Seong Heum CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALL-TUNGSTEN SCHEME FOR SOURCE/DRAIN CONTACT, SOURCE/DRAIN VIA, AND...
- Publication number 20240395618
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG
- Publication number 20240387267
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION WINDOW ENLARGEMENT
- Publication number 20240387180
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20240387645
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE CONDUCTIVE VIAS
- Publication number 20240387652
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SIMULTANEOUS SILICIDATION ON SOURCE AND DRAIN OF NMOS AND...
- Publication number 20240387290
- Publication date Nov 21, 2024
- Applied Materials, Inc.
- Xuebin LI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS
- Publication number 20240387289
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20240387697
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379459
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions and Methods of Forming Same
- Publication number 20240379454
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE/DRAIN FEATURES
- Publication number 20240379807
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR
- Publication number 20240381667
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MEOL CONTACT STRUCTURE
- Publication number 20240379768
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Shumao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER
- Publication number 20240379806
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ming HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20240371952
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hung CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY FIN PROFILE CONTROL TO ENLARGE GATE PROCESS WINDOW
- Publication number 20240371979
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240372008
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CIRCUIT
- Publication number 20240371950
- Publication date Nov 7, 2024
- ETRON TECHNOLOGY, INC.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE GATE STRUCTURES
- Publication number 20240371963
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structures For Semiconductor Devices
- Publication number 20240372007
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS

the conductive layers comprising silicides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having deep trench structure and method of man...

Bottom lateral expansion of contact plugs through implantation

Backside power rail structure and methods of forming same

Semiconductor device

Method of forming a transistor device with a gate structure having...

Conductive structures and methods of formation

Epitaxial structures for semiconductor devices

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device and method

Semiconductor structure and method for forming same

Semiconductor device and manufacturing method thereof

Semiconductor devices

Backside contact structures with stacked metal silicide layers for...

Field-effect transistor device with gate spacer structure

Semiconductor device with transistor local interconnects

Method for forming source/drain contacts

Different via configurations for different via interface requirements

Semiconductor device

Transistor gate structures and methods of forming the same

Contact over active gate structures for advanced integrated circuit...

Methods for forming recesses in source/drain regions and devices fo...

Semiconductor structure with a contact to source/drain layers and f...

Semiconductor devices and methods of manufacturing semiconductor de...

Semiconductor device and forming method thereof

Fin field-effect transistor device and method

Contact plug

Low resistance approaches for fabricating contacts and the resultin...

Memories having vertically stacked conductive filled structures

Dummy fin profile control to enlarge gate process window

Hybrid isolation regions having upper and lower portions with seams

Patents Applicationslast 30 patents

STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...

Backside Via and Dual Side Power Rail For Epitaxial Source/Drain St...

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

Methods of Filling Openings with Conductive Material, and Assemblie...

DUAL SILICIDE PROCESS USING RUTHENIUM SILICIDE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

ALL-TUNGSTEN SCHEME FOR SOURCE/DRAIN CONTACT, SOURCE/DRAIN VIA, AND...

CONTACT PLUG

DEPOSITION WINDOW ENLARGEMENT

CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT INCLUDING BACKSIDE CONDUCTIVE VIAS

METHOD OF SIMULTANEOUS SILICIDATION ON SOURCE AND DRAIN OF NMOS AND...

DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

SEMICONDUCTOR DEVICES

Source/Drain Regions and Methods of Forming Same

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

METAL SOURCE/DRAIN FEATURES

EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICES

METHOD OF FORMING A MEOL CONTACT STRUCTURE

SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER

BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES

DUMMY FIN PROFILE CONTROL TO ENLARGE GATE PROCESS WINDOW

SEMICONDUCTOR DEVICES

SEMICONDUCTOR CIRCUIT

SEMICONDUCTOR DEVICE GATE STRUCTURES

Epitaxial Structures For Semiconductor Devices