the conductive layers comprising silicides

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H01L21/28518

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28518the conductive layers comprising silicides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,967,594
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory
- Patent number 11,949,022
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 11,942,376
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-region diffusion barrier containing titanium, silicon and nit...
- Patent number 11,942,365
- Issue date Mar 26, 2024
- Eugenus, Inc.
- Vinayak Veer Vats
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved source and drain contact area an...
- Patent number 11,929,409
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching platinum-containing thin film using protective cap layer
- Patent number 11,929,423
- Issue date Mar 12, 2024
- Texas Instruments Incorporated
- Sebastian Meier
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Embedded backside memory on a field effect transistor
- Patent number 11,925,033
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,916,060
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor structures
- Patent number 11,908,914
- Issue date Feb 20, 2024
- Applied Materials, Inc.
- Ria Someshwar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,908,695
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic structure using reforming gas, syst...
- Patent number 11,908,684
- Issue date Feb 20, 2024
- ASM IP Holding B.V.
- Shinya Yoshimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET by implanting a dielectric with a...
- Patent number 11,901,455
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,901,183
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Hsiu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide film nucleation
- Patent number 11,901,182
- Issue date Feb 13, 2024
- Applied Materials, Inc.
- Xuebin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having an oxygen free platinum group metal film
- Patent number 11,894,233
- Issue date Feb 6, 2024
- Applied Materials, Inc.
- Yixiong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure manufacturing method and two semiconductor...
- Patent number 11,887,854
- Issue date Jan 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 11,871,558
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Yong-hoon Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxial region
- Patent number 11,869,765
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact plugs and methods forming same
- Patent number 11,862,708
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Hua Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contacts including intermetallic alloy of nickel, pl...
- Patent number 11,862,567
- Issue date Jan 2, 2024
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with epitaxial bridge feature and methods of f...
- Patent number 11,855,225
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting-Yeh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melt anneal source and drain regions
- Patent number 11,855,146
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming
- Patent number 11,854,811
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure of a semiconductor device
- Patent number 11,854,875
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Joanna Chaw Yane Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact feature and method of fabricati...
- Patent number 11,855,155
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contact structure and method of forming the same in a semicon...
- Patent number 11,854,874
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240136191
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Hsiu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136416
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- Jun Ki Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...
- Publication number 20240120381
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS
- Publication number 20240113178
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
- Publication number 20240105787
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096630
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...
- Publication number 20240096971
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240096979
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240096990
- Publication date Mar 21, 2024
- Fuji Electric Co., Ltd.
- Tomohiro MORIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20240096697
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Joanna Chaw Yane YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE/DRAIN FEATURES
- Publication number 20240097001
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
- Publication number 20240097029
- Publication date Mar 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240088234
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHANSYUN DAVID YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...
- Publication number 20240088297
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION
- Publication number 20240087884
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Contact Structure and Method of Forming the Same in a Semicon...
- Publication number 20240087953
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE MOSI DEPOSITION
- Publication number 20240079241
- Publication date Mar 7, 2024
- Applied Materials, Inc.
- Thomas Anthony Empante
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR...
- Publication number 20240079457
- Publication date Mar 7, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Jun WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A CONDUCTI...
- Publication number 20240079456
- Publication date Mar 7, 2024
- SK HYNIX INC.
- Jae Man YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING A METAL SILICIDE MATERIAL OVER A SOURC...
- Publication number 20240081057
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUGS AND METHODS FORMING SAME
- Publication number 20240072155
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Hua Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES
- Publication number 20240071832
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Ronald Allen Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRO...
- Publication number 20240074178
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial Layer for Semiconductor Process
- Publication number 20240072128
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063275
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAIL STRUCTURE AND METHODS OF FORMING SAME
- Publication number 20240063125
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICIDE GATE FOR DISCRETE SHIELDED-GATE TRENCH POWER...
- Publication number 20240063305
- Publication date Feb 22, 2024
- Analog Devices, Inc.
- Zhenyin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240055501
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pinyen Lin
- H01 - BASIC ELECTRIC ELEMENTS

the conductive layers comprising silicides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structure and methods of forming the same

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Three dimensional memory

Method for manufacturing semiconductor structure

Multi-region diffusion barrier containing titanium, silicon and nit...

Semiconductor device with improved source and drain contact area an...

Etching platinum-containing thin film using protective cap layer

Embedded backside memory on a field effect transistor

Semiconductor device having improved electrostatic discharge protec...

Methods of forming semiconductor structures

Replacement gate methods that include treating spacers to widen gate

Method of forming an electronic structure using reforming gas, syst...

Method of manufacturing a FinFET by implanting a dielectric with a...

Fin field-effect transistor device and method of forming the same

Silicide film nucleation

Electronic device having an oxygen free platinum group metal film

Semiconductor structure manufacturing method and two semiconductor...

Fin patterning for advanced integrated circuit structure fabrication

Semiconductor memory device and method for manufacturing the same

Semiconductor device including epitaxial region

Contact plugs and methods forming same

Low resistance contacts including intermetallic alloy of nickel, pl...

Semiconductor device with epitaxial bridge feature and methods of f...

Melt anneal source and drain regions

FinFET device and method of forming

Contact structure of a semiconductor device

Semiconductor device having contact feature and method of fabricati...

Metal contact structure and method of forming the same in a semicon...

Patents Applicationslast 30 patents

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...

VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE

METAL SOURCE/DRAIN FEATURES

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

MELT ANNEAL SOURCE AND DRAIN REGIONS

A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

Metal Contact Structure and Method of Forming the Same in a Semicon...

SELECTIVE MOSI DEPOSITION

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A CONDUCTI...

ELECTRONIC DEVICES INCLUDING A METAL SILICIDE MATERIAL OVER A SOURC...

CONTACT PLUGS AND METHODS FORMING SAME

ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES

ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRO...

Sacrificial Layer for Semiconductor Process

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

SEMICONDUCTOR DEVICE

BACKSIDE POWER RAIL STRUCTURE AND METHODS OF FORMING SAME

SELF-ALIGNED SILICIDE GATE FOR DISCRETE SHIELDED-GATE TRENCH POWER...

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF