the device being a photo MESFET

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H01L31/1123

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof

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H01L31/1123the device being a photo MESFET

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor photodetector assembly
- Patent number 11,302,835
- Issue date Apr 12, 2022
- Analog Devices, Inc.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface MESFET
- Patent number 11,296,239
- Issue date Apr 5, 2022
- EMBERION OY
- Sami Kallioinen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based ultra-violet sensor with intrinsic amplificat...
- Patent number 11,081,613
- Issue date Aug 3, 2021
- Tower Semiconductor Ltd.
- Yakov Roizin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-effect transistor (LET)
- Patent number 10,784,650
- Issue date Sep 22, 2020
- The University of North Carolina at Charlotte
- Yong Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
MSM ultraviolet ray receiving element, MSM ultraviolet ray receivin...
- Patent number 10,424,684
- Issue date Sep 24, 2019
- Asahi Kasei Kabushiki Kaisha
- Akira Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,786,806
- Issue date Oct 10, 2017
- Canon Kabushiki Kaisha
- Ryota Sekiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light receiving element with offset absorbing layer
- Patent number 9,147,781
- Issue date Sep 29, 2015
- Fujitsu Limited
- Kazumasa Takabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise hybridized detector using charge transfer
- Patent number 8,860,083
- Issue date Oct 14, 2014
- Sensors Unlimited, Inc.
- John Alfred Trezza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light receiving element with offset absorbing layer
- Patent number 8,710,614
- Issue date Apr 29, 2014
- Fujitsu Limited
- Kazumasa Takabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo-field effect transistor and its production method
- Patent number 8,415,713
- Issue date Apr 9, 2013
- National Institute of Advanced Industrial Science and Technology
- Mutsuo Ogura
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Schottky diode with silver layer contacting the ZnO and MgxZn1−xO f...
- Patent number 7,400,030
- Issue date Jul 15, 2008
- Rutgers, The State University of New Jersey
- Yicheng Lu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO f...
- Patent number 6,846,731
- Issue date Jan 25, 2005
- Rutgers, The State University of New Jersey
- Yicheng Lu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Broadband backside illuminated MESFET with collecting microlens
- Patent number 6,078,070
- Issue date Jun 20, 2000
- W. L. Gore & Associates, Inc.
- Gerald D. Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a broadband backside illuminated MESFET with colle...
- Patent number 5,811,322
- Issue date Sep 22, 1998
- W. L. Gore & Associates, Inc.
- Gerald D. Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside illuminated FET optical receiver with gallium arsenide spe...
- Patent number 5,804,847
- Issue date Sep 8, 1998
- The United States of America as represented by the Secretary of the Air Force
- Gerald D. Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light sensitive semiconductor device and method of operation
- Patent number 5,739,561
- Issue date Apr 14, 1998
- Motorola, Inc.
- Peter Wennekers
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Compound field effect transistor having a conductive layer comprisi...
- Patent number 5,686,756
- Issue date Nov 11, 1997
- NEC Corporation
- Yasuko Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating backside illuminated FET optical receiver wit...
- Patent number 5,663,075
- Issue date Sep 2, 1997
- The United States of America as represented by the Secretary of the Air Force
- Gerald D. Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for varying the mobility of electrons by light...
- Patent number 5,633,512
- Issue date May 27, 1997
- Canon Kabushiki Kaisha
- Masahiro Okuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET optical receiver using backside illumination, indium materials...
- Patent number 5,608,255
- Issue date Mar 4, 1997
- The United States of America as represented by the Secretary of the Air Force
- Eric A. Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical field-effect transistor with improved sensitivity
- Patent number 5,567,973
- Issue date Oct 22, 1996
- The United States of America as represented by the Secretary of the Army
- Arthur Paolella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically coupled MESFET
- Patent number 5,536,954
- Issue date Jul 16, 1996
- The United States of America as represented by the Secretary of the Army
- Arye Rosen
- G02 - OPTICS
Information Patent Grant
FET optical receiver using backside illumination, indium materials...
- Patent number 5,532,173
- Issue date Jul 2, 1996
- The United States of America as represented by the Secretary of the Air Force
- Eric A. Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable gain optical detector
- Patent number 5,453,630
- Issue date Sep 26, 1995
- The United States of America as represented by the Secretary of the Army
- Arthur Paolella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated total internal reflection optical switch utilizing charg...
- Patent number 5,329,137
- Issue date Jul 12, 1994
- The United States of America as represented by the Secretary of the Air Force
- Geoffrey W. Taylor
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photodetector capable of sweeping out unwanted carriers and an opti...
- Patent number 5,298,739
- Issue date Mar 29, 1994
- Canon Kabushiki Kaisha
- Tamayo Hiroki
- G02 - OPTICS
Information Patent Grant
Waveguide type photodetector and a method of fabricating the same
- Patent number 5,285,514
- Issue date Feb 8, 1994
- Canon Kabushiki Kaisha
- Hidetoshi Nojiri
- G02 - OPTICS
Information Patent Grant
Field effect transistor type photo-detector
- Patent number 5,196,717
- Issue date Mar 23, 1993
- Canon Kabushiki Kaisha
- Tamayo Hiroki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical FET high speed optical sensor
- Patent number 4,970,386
- Issue date Nov 13, 1990
- Westinghouse Electric Corp.
- Daniel C. Buck
- G02 - OPTICS
Information Patent Grant
Single quantum well optical modulator
- Patent number 4,872,744
- Issue date Oct 10, 1989
- Bell Communications Research, Inc.
- Joseph H. Abeles
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

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GaAs Based Photodetectors Using Dilute Nitride for Operation in O-b...
- Publication number 20230146773
- Publication date May 11, 2023
- NanoGrass Solar LLC
- Bahram Nabet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplificat...
- Publication number 20210043793
- Publication date Feb 11, 2021
- Tower Semiconductor Ltd.
- Yakov Roizin
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR PHOTODETECTOR ASSEMBLY
- Publication number 20200220036
- Publication date Jul 9, 2020
- Analog Devices, Inc.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MSM ULTRAVIOLET RAY RECEIVING ELEMENT, MSM ULTRAVIOLET RAY RECEIVIN...
- Publication number 20180358500
- Publication date Dec 13, 2018
- Asahi Kasei Kabushiki Kaisha
- Akira YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160351744
- Publication date Dec 1, 2016
- Canon Kabushiki Kaisha
- Ryota Sekiguchi
- G01 - MEASURING TESTING
Information Patent Application
LIGHT RECEIVING ELEMENT WITH OFFSET ABSORBING LAYER
- Publication number 20140312445
- Publication date Oct 23, 2014
- Kazumasa TAKABAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT RECEIVING DEVICE
- Publication number 20140175589
- Publication date Jun 26, 2014
- Fujitsu Limited
- Kazumasa Takabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT RECEIVING ELEMENT, LIGHT RECEIVING DEVICE, AND LIGHT RECEIVIN...
- Publication number 20120235265
- Publication date Sep 20, 2012
- Fujitsu Limited
- Kazumasa Takabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTO-FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD
- Publication number 20110001166
- Publication date Jan 6, 2011
- National Instituteof Advanced Industrial Science and Technology
- Mutsuo Ogura
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO f...
- Publication number 20050145970
- Publication date Jul 7, 2005
- Rutgers, The State University of New Jersey
- Yicheng Lu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO f...
- Publication number 20030129813
- Publication date Jul 10, 2003
- Rutgers, The State University of New Jersey
- Yicheng Lu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

the device being a photo MESFET

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor photodetector assembly

Surface MESFET

Gallium nitride based ultra-violet sensor with intrinsic amplificat...

Light-effect transistor (LET)

MSM ultraviolet ray receiving element, MSM ultraviolet ray receivin...

Semiconductor device and method for manufacturing the same

Light receiving element with offset absorbing layer

Low noise hybridized detector using charge transfer

Light receiving element with offset absorbing layer

Photo-field effect transistor and its production method

Schottky diode with silver layer contacting the ZnO and MgxZn1−xO f...

Schottky diode with silver layer contacting the ZnO and MgxZn1-xO f...

Broadband backside illuminated MESFET with collecting microlens

Method of making a broadband backside illuminated MESFET with colle...

Backside illuminated FET optical receiver with gallium arsenide spe...

Light sensitive semiconductor device and method of operation

Compound field effect transistor having a conductive layer comprisi...

Method of fabricating backside illuminated FET optical receiver wit...

Semiconductor device for varying the mobility of electrons by light...

FET optical receiver using backside illumination, indium materials...

Optical field-effect transistor with improved sensitivity

Optically coupled MESFET

FET optical receiver using backside illumination, indium materials...

Variable gain optical detector

Integrated total internal reflection optical switch utilizing charg...

Photodetector capable of sweeping out unwanted carriers and an opti...

Waveguide type photodetector and a method of fabricating the same

Field effect transistor type photo-detector

Vertical FET high speed optical sensor

Single quantum well optical modulator

Patents Applicationslast 30 patents

GaAs Based Photodetectors Using Dilute Nitride for Operation in O-b...

Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplificat...

SEMICONDUCTOR PHOTODETECTOR ASSEMBLY

MSM ULTRAVIOLET RAY RECEIVING ELEMENT, MSM ULTRAVIOLET RAY RECEIVIN...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

LIGHT RECEIVING ELEMENT WITH OFFSET ABSORBING LAYER

LIGHT RECEIVING DEVICE

LIGHT RECEIVING ELEMENT, LIGHT RECEIVING DEVICE, AND LIGHT RECEIVIN...

PHOTO-FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD

Schottky diode with silver layer contacting the ZnO and MgxZn1-xO f...

Schottky diode with silver layer contacting the ZnO and MgxZn1-xO f...