the device being an antiparallel diode

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CPC
H01L29/7416

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7416the device being an antiparallel diode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Segmented power diode structure with improved reverse recovery
- Patent number 11,967,638
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,916,059
- Issue date Feb 27, 2024
- Infineon Technologies AG
- Andre Schmenn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor discharge protection device with diode and silicon co...
- Patent number 11,552,071
- Issue date Jan 10, 2023
- Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Ming-Feng Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,127,733
- Issue date Sep 21, 2021
- Infineon Technologies AG
- Andre Schmenn
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method for manufacturing an electronic device and electronic device
- Patent number 10,622,346
- Issue date Apr 14, 2020
- Infineon Technologies AG
- Andre Schmenn
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Power component protected against overheating
- Patent number 10,453,835
- Issue date Oct 22, 2019
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection with integrated diode
- Patent number 10,381,340
- Issue date Aug 13, 2019
- NXP B.V.
- Da-Wei Lai
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Vertical fin-type devices and methods
- Patent number 10,361,293
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Tsung-Che Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT
- Patent number 10,340,373
- Issue date Jul 2, 2019
- University of Electronic Science and Technology of China
- Xiaorong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a HEMT
- Patent number 10,326,011
- Issue date Jun 18, 2019
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Turn-off power semiconductor device with improved centering and fix...
- Patent number 10,249,747
- Issue date Apr 2, 2019
- ABB Schweiz AG
- Hendrik Ravener
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor stack for converter with snubber capacitors
- Patent number 10,164,519
- Issue date Dec 25, 2018
- ABB Schweiz AG
- Osman Senturk
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Apparatus for rectified RC trigger of back-to-back MOS-SCR ESD prot...
- Patent number 10,079,227
- Issue date Sep 18, 2018
- Texas Instruments Incorporated
- Yang Xiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power component protected against overheating
- Patent number 10,069,001
- Issue date Sep 4, 2018
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of operating a double-base-contact bidirectional bipolar ju...
- Patent number 9,900,002
- Issue date Feb 20, 2018
- IDEAL POWER, INC.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
ESD protection structure
- Patent number 9,893,050
- Issue date Feb 13, 2018
- NXP USA, INC.
- Jean Philippe Laine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a bidirectional HEMT
- Patent number 9,818,854
- Issue date Nov 14, 2017
- Semiconductor Components Industries, LLC
- Peter Moens
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Thin-substrate double-base high-voltage bipolar transistors
- Patent number 9,786,773
- Issue date Oct 10, 2017
- IDEAL POWER, INC.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Half-bridge HEMT circuit and an electronic package including the ci...
- Patent number 9,773,895
- Issue date Sep 26, 2017
- Semiconductor Components Industries, LLC
- Balaji Padmanabhan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bidirectional semiconductor switch with passive turnoff
- Patent number 9,742,385
- Issue date Aug 22, 2017
- IDEAL POWER, INC.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Hybrid wide-bandgap semiconductor bipolar switches
- Patent number 9,721,944
- Issue date Aug 1, 2017
- United Silicon Carbide, Inc.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operating point optimization with double-base-contact bidirectional...
- Patent number 9,660,551
- Issue date May 23, 2017
- IDEAL POWER, INC.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bidirectional HEMT and an electronic package including the bidirect...
- Patent number 9,660,062
- Issue date May 23, 2017
- Semiconductor Components Industries, LLC
- Balaji Padmanabhan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
ESD device and structure therefor
- Patent number 9,564,424
- Issue date Feb 7, 2017
- Semiconductor Components Industries, LLC
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up free vertical TVS diode array structure using trench isola...
- Patent number 9,461,031
- Issue date Oct 4, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-performance device for protection from electrostatic discharge
- Patent number 9,455,247
- Issue date Sep 27, 2016
- STMicroelectronics S.A.
- Philippe Galy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits, methods, and systems with optimized operation of double-b...
- Patent number 9,444,449
- Issue date Sep 13, 2016
- Ideal Power Inc.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reverse-conducting power semiconductor device
- Patent number 9,385,223
- Issue date Jul 5, 2016
- ABB Technology AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection device
- Patent number 9,385,115
- Issue date Jul 5, 2016
- NXP B.V.
- Godfried Henricus Josephus Notermans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor including emitter short regions
- Patent number 9,111,989
- Issue date Aug 18, 2015
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device Comprising a Thyristor and a Bipolar Jun...
- Publication number 20230118951
- Publication date Apr 20, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting Power Semiconductor Device and Method for Manufa...
- Publication number 20230046742
- Publication date Feb 16, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented Power Diode Structure with Improved Reverse Recovery
- Publication number 20220181473
- Publication date Jun 9, 2022
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20220045046
- Publication date Feb 10, 2022
- INFINEON TECHNOLOGIES AG
- Andre SCHMENN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20200176438
- Publication date Jun 4, 2020
- INFINEON TECHNOLOGIES AG
- Andre SCHMENN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
VERTICAL FIN-TYPE DEVICES AND METHODS
- Publication number 20190229207
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Tsung-Che Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER COMPONENT PROTECTED AGAINST OVERHEATING
- Publication number 20180350793
- Publication date Dec 6, 2018
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE AND ELECTRONIC DEVICE
- Publication number 20180096984
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES AG
- Andre SCHMENN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
REVERSE CONDUCTING IGBT
- Publication number 20180061972
- Publication date Mar 1, 2018
- University of Electronic Science and Technology of China
- Xiaorong LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A HEMT
- Publication number 20180033877
- Publication date Feb 1, 2018
- Semiconductor Components Industries, LLC
- Peter MOENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER COMPONENT PROTECTED AGAINST OVERHEATING
- Publication number 20170287892
- Publication date Oct 5, 2017
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for Rectified RC Trigger of Back-to-Back MOS-SCR ESD Prot...
- Publication number 20170250174
- Publication date Aug 31, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Yang Xiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION WITH INTEGRATED DIODE
- Publication number 20170213816
- Publication date Jul 27, 2017
- NXP B.V.
- Da-Wei LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION STRUCTURE
- Publication number 20170005081
- Publication date Jan 5, 2017
- Freescale Semiconductor, Inc.
- Jean Philippe LAINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL HEMT AND AN ELECTRONIC PACKAGE INCLUDING THE BIDIRECT...
- Publication number 20160322485
- Publication date Nov 3, 2016
- Semiconductor Components Industries, LLC
- Balaji PADMANABHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-Substrate Double-Base High-Voltage Bipolar Transistors
- Publication number 20160268405
- Publication date Sep 15, 2016
- IDEAL POWER INC.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Collector-Side-Base-Driven Two-Base-Contact Bipolar Transistor with...
- Publication number 20160269021
- Publication date Sep 15, 2016
- IDEAL POWER INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Operating a Double-Base-Contact Bidirectional Bipolar Ju...
- Publication number 20160241232
- Publication date Aug 18, 2016
- IDEAL POWER INC.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN ESD DEVICE AND STRUCTURE THEREFOR
- Publication number 20160225756
- Publication date Aug 4, 2016
- Semiconductor Components Industries, LLC
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STACK FOR CONVERTER WITH SNUBBER CAPACITORS
- Publication number 20160218615
- Publication date Jul 28, 2016
- ABB TECHNOLOGY AG
- Osman Senturk
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
High-Performance Device for Protection from Electrostatic Discharge
- Publication number 20160218098
- Publication date Jul 28, 2016
- STMicroelectronics S.A.
- Philippe Galy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuits, Methods, and Systems with Optimized Operation of Double-B...
- Publication number 20160173083
- Publication date Jun 16, 2016
- IDEAL POWER INC.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES
- Publication number 20160118381
- Publication date Apr 28, 2016
- UNITED SILICON CARBIDE, INC.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE
- Publication number 20160013302
- Publication date Jan 14, 2016
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES
- Publication number 20150115289
- Publication date Apr 30, 2015
- UNITED SILICON CARBIDE, INC.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Including Emitter Short Regions
- Publication number 20140291724
- Publication date Oct 2, 2014
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-DIRECTIONAL SILICON CONTROLLED RECTIFIER STRUCTURE
- Publication number 20140239343
- Publication date Aug 28, 2014
- International Business Machines Corporation
- James P. Di Sarro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN ESD DEVICE AND STRUCTURE THEREFOR
- Publication number 20140159108
- Publication date Jun 12, 2014
- Semiconductor Components Industries, LLC
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A TRENCH-GATED THYRISTOR WITH A TRENCH-GATED RECTIFIER
- Publication number 20140054641
- Publication date Feb 27, 2014
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE
- Publication number 20130207157
- Publication date Aug 15, 2013
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS

the device being an antiparallel diode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Segmented power diode structure with improved reverse recovery

Electronic device

Semiconductor discharge protection device with diode and silicon co...

Electronic device

Method for manufacturing an electronic device and electronic device

Power component protected against overheating

Electrostatic discharge protection with integrated diode

Vertical fin-type devices and methods

Reverse conducting IGBT

Electronic device including a HEMT

Turn-off power semiconductor device with improved centering and fix...

Semiconductor stack for converter with snubber capacitors

Apparatus for rectified RC trigger of back-to-back MOS-SCR ESD prot...

Power component protected against overheating

Methods of operating a double-base-contact bidirectional bipolar ju...

ESD protection structure

Electronic device including a bidirectional HEMT

Thin-substrate double-base high-voltage bipolar transistors

Half-bridge HEMT circuit and an electronic package including the ci...

Bidirectional semiconductor switch with passive turnoff

Hybrid wide-bandgap semiconductor bipolar switches

Operating point optimization with double-base-contact bidirectional...

Bidirectional HEMT and an electronic package including the bidirect...

ESD device and structure therefor

Latch-up free vertical TVS diode array structure using trench isola...

High-performance device for protection from electrostatic discharge

Circuits, methods, and systems with optimized operation of double-b...

Reverse-conducting power semiconductor device

Electrostatic discharge protection device

Insulated gate bipolar transistor including emitter short regions

Patents Applicationslast 30 patents

Power Semiconductor Device Comprising a Thyristor and a Bipolar Jun...

Reverse Conducting Power Semiconductor Device and Method for Manufa...

Segmented Power Diode Structure with Improved Reverse Recovery

ELECTRONIC DEVICE

ELECTRONIC DEVICE

VERTICAL FIN-TYPE DEVICES AND METHODS

POWER COMPONENT PROTECTED AGAINST OVERHEATING

METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE AND ELECTRONIC DEVICE

REVERSE CONDUCTING IGBT

ELECTRONIC DEVICE INCLUDING A HEMT

POWER COMPONENT PROTECTED AGAINST OVERHEATING

Apparatus for Rectified RC Trigger of Back-to-Back MOS-SCR ESD Prot...

ELECTROSTATIC DISCHARGE PROTECTION WITH INTEGRATED DIODE

ESD PROTECTION STRUCTURE

BIDIRECTIONAL HEMT AND AN ELECTRONIC PACKAGE INCLUDING THE BIDIRECT...

Thin-Substrate Double-Base High-Voltage Bipolar Transistors

Collector-Side-Base-Driven Two-Base-Contact Bipolar Transistor with...

Methods of Operating a Double-Base-Contact Bidirectional Bipolar Ju...

METHOD OF FORMING AN ESD DEVICE AND STRUCTURE THEREFOR

SEMICONDUCTOR STACK FOR CONVERTER WITH SNUBBER CAPACITORS

High-Performance Device for Protection from Electrostatic Discharge

Circuits, Methods, and Systems with Optimized Operation of Double-B...

HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES

REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE

HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES

Insulated Gate Bipolar Transistor Including Emitter Short Regions

BI-DIRECTIONAL SILICON CONTROLLED RECTIFIER STRUCTURE

METHOD OF FORMING AN ESD DEVICE AND STRUCTURE THEREFOR

INTEGRATING A TRENCH-GATED THYRISTOR WITH A TRENCH-GATED RECTIFIER

REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE