the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

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H01L29/66083

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66083the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

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Patents Grantslast 30 patents

Information Patent Grant
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3045129
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- H01 - BASIC ELECTRIC ELEMENTS

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the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and operation method thereof

Terahertz oscillator and producing method thereof

Ferroelectric-assisted tunneling selector device

Semiconductor device and operation method thereof

Ferroelectric-assisted tunneling selector device

Power semiconductor devices with low specific on-resistance

Voltage-controllable capacitor comprising a ferroelectric layer and...

Complementary metal-oxide-semiconductor (CMOS) voltage-controlled r...

Semiconductor device having trench capacitor structure integrated t...

Schottky diode with buried layer in GaN materials

Schottky diode with buried layer in GaN materials

Method for producing silicon nanowire devices

Fabrication method of two-terminal semiconductor component using tr...

Method for manufacturing a semiconductor substrate including laser...

Nanotip capacitor

Punch-through diode and method of processing the same

Active matrix substrate and method of fabricating the same

Active matrix substrate and method of fabricating the same

Slope etching process

3045129

Patents Applicationslast 30 patents

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FERROELECTRIC TUNNEL JUNCTION DEVICES WITH INTERNAL BIASES FOR LONG...

FERROELECTRIC-ASSISTED TUNNELING SELECTOR DEVICE

Power Semiconductor Devices with Low Specific On-Resistance

SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF

VOLTAGE-CONTROLLABLE CAPACITOR COMPRISING A FERROELECTRIC LAYER AND...

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) VOLTAGE-CONTROLLED R...

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SEMICONDUCTOR DEVICE HAVING TRENCH CAPACITOR STRUCTURE INTEGRATED T...

METHOD FOR PRODUCING SILICON NANOWIRE DEVICES

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS

FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TR...

METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...

Nanotip capacitor

Punch-through diode and method of processing the same

Active matrix substrate and method of fabricating the same

Active matrix substrate and method of fabricating the same

Rectifying device and method of fabrication thereof