the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Industry

CPC
H01L29/66083

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66083the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and operation method thereof
- Patent number 11,963,343
- Issue date Apr 16, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Hitoshi Kunitake
- G11 - INFORMATION STORAGE
Information Patent Grant
Terahertz oscillator and producing method thereof
- Patent number 11,863,125
- Issue date Jan 2, 2024
- Tokyo Institute of Technology
- Safumi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-assisted tunneling selector device
- Patent number 11,804,556
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Milan Pesić
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and operation method thereof
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- Issue date Aug 30, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Hitoshi Kunitake
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric-assisted tunneling selector device
- Patent number 11,411,125
- Issue date Aug 9, 2022
- Applied Materials, Inc.
- Milan Pesić
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices with low specific on-resistance
- Patent number 11,227,949
- Issue date Jan 18, 2022
- University of Electronic Science and Technology of China
- Ming Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controllable capacitor comprising a ferroelectric layer and...
- Patent number 11,121,266
- Issue date Sep 14, 2021
- Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Thomas Kaempfe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor (CMOS) voltage-controlled r...
- Patent number 10,326,028
- Issue date Jun 18, 2019
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench capacitor structure integrated t...
- Patent number 9,608,130
- Issue date Mar 28, 2017
- Maxim Integrated Products, Inc.
- Khanh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 8,933,532
- Issue date Jan 13, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon nanowire devices
- Patent number 8,507,369
- Issue date Aug 13, 2013
- Shanghai Huali Microelectronics Corporation
- Xubin Jing
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication method of two-terminal semiconductor component using tr...
- Patent number 8,048,800
- Issue date Nov 1, 2011
- Dongguk University Industry—Academic Corporation Foundation
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor substrate including laser...
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- Issue date Nov 30, 2010
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotip capacitor
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- Issue date Jan 12, 2010
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Information Patent Grant
Punch-through diode and method of processing the same
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- Issue date May 5, 2009
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Information Patent Grant
Active matrix substrate and method of fabricating the same
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- Issue date Jan 2, 2007
- NEC LCD Technologies, Ltd.
- Hiroshi Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active matrix substrate and method of fabricating the same
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- Issue date May 11, 2004
- NEC LCD Technologies, Ltd.
- Hiroshi Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Slope etching process
- Patent number 5,174,857
- Issue date Dec 29, 1992
- Gold Star Co., Ltd.
- Kang H. Sung
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
3045129
- Patent number 3,045,129
- Issue date Jul 17, 1962
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

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- Publication number 20250040157
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Liang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROGRAMMABLE INSULATING LAYER AND METHOD...
- Publication number 20250031390
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- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROGRAMMABLE INSULATING LAYER AND METHOD...
- Publication number 20250031391
- Publication date Jan 23, 2025
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230178590
- Publication date Jun 8, 2023
- Mitsubishi Electric Corporation
- Hiroaki HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF
- Publication number 20230127474
- Publication date Apr 27, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Hitoshi KUNITAKE
- G11 - INFORMATION STORAGE
Information Patent Application
TERAHERTZ OSCILLATOR AND PRODUCING METHOD THEREOF
- Publication number 20230057209
- Publication date Feb 23, 2023
- TOKYO INSTITUTE OF TECHNOLOGY
- Safumi SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION DEVICES WITH INTERNAL BIASES FOR LONG...
- Publication number 20230054171
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- Applied Materials, Inc.
- Milan Pesic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC-ASSISTED TUNNELING SELECTOR DEVICE
- Publication number 20220109074
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Milan Pesic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices with Low Specific On-Resistance
- Publication number 20210273095
- Publication date Sep 2, 2021
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF
- Publication number 20200365591
- Publication date Nov 19, 2020
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE-CONTROLLABLE CAPACITOR COMPRISING A FERROELECTRIC LAYER AND...
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Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) VOLTAGE-CONTROLLED R...
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- QUALCOMM Incorporated
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Information Patent Application
SEMICONDUCTOR PRESSURE SENSOR DEVICE AND METHOD OF MANUFACTURING TH...
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- Kazuhiro MATSUNAMI
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Information Patent Application
SEMICONDUCTOR DEVICE HAVING TRENCH CAPACITOR STRUCTURE INTEGRATED T...
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Information Patent Application
METHOD FOR PRODUCING SILICON NANOWIRE DEVICES
- Publication number 20130102134
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- Xubin JING
- B82 - NANO-TECHNOLOGY
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20130087879
- Publication date Apr 11, 2013
- EPOWERSOFT, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS
- Publication number 20130087835
- Publication date Apr 11, 2013
- EPOWERSOFT, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TR...
- Publication number 20110059609
- Publication date Mar 10, 2011
- Dongguk University Industry-Academic Cooperation Foundation
- Jin-Koo Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...
- Publication number 20090267200
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- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanotip capacitor
- Publication number 20080197399
- Publication date Aug 21, 2008
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
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Information Patent Application
Punch-through diode and method of processing the same
- Publication number 20060158801
- Publication date Jul 20, 2006
- Hans-Martin Ritter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active matrix substrate and method of fabricating the same
- Publication number 20040159840
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- G02 - OPTICS
Information Patent Application
Active matrix substrate and method of fabricating the same
- Publication number 20020139972
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- NEC Corporation
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Information Patent Application
Rectifying device and method of fabrication thereof
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- Publication date Aug 15, 2002
- Chein-Chang Chen
- H01 - BASIC ELECTRIC ELEMENTS

the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and operation method thereof

Terahertz oscillator and producing method thereof

Ferroelectric-assisted tunneling selector device

Semiconductor device and operation method thereof

Ferroelectric-assisted tunneling selector device

Power semiconductor devices with low specific on-resistance

Voltage-controllable capacitor comprising a ferroelectric layer and...

Complementary metal-oxide-semiconductor (CMOS) voltage-controlled r...

Semiconductor device having trench capacitor structure integrated t...

Schottky diode with buried layer in GaN materials

Schottky diode with buried layer in GaN materials

Method for producing silicon nanowire devices

Fabrication method of two-terminal semiconductor component using tr...

Method for manufacturing a semiconductor substrate including laser...

Nanotip capacitor

Punch-through diode and method of processing the same

Active matrix substrate and method of fabricating the same

Active matrix substrate and method of fabricating the same

Slope etching process

3045129

Patents Applicationslast 30 patents

Metal-Oxide-Semiconductor Capacitors and Methods of Fabricating The...

SEMICONDUCTOR DEVICE WITH PROGRAMMABLE INSULATING LAYER AND METHOD...

SEMICONDUCTOR DEVICE WITH PROGRAMMABLE INSULATING LAYER AND METHOD...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF

TERAHERTZ OSCILLATOR AND PRODUCING METHOD THEREOF

FERROELECTRIC TUNNEL JUNCTION DEVICES WITH INTERNAL BIASES FOR LONG...

FERROELECTRIC-ASSISTED TUNNELING SELECTOR DEVICE

Power Semiconductor Devices with Low Specific On-Resistance

SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF

VOLTAGE-CONTROLLABLE CAPACITOR COMPRISING A FERROELECTRIC LAYER AND...

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) VOLTAGE-CONTROLLED R...

SEMICONDUCTOR PRESSURE SENSOR DEVICE AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR DEVICE HAVING TRENCH CAPACITOR STRUCTURE INTEGRATED T...

METHOD FOR PRODUCING SILICON NANOWIRE DEVICES

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS

FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TR...

METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...

Nanotip capacitor

Punch-through diode and method of processing the same

Active matrix substrate and method of fabricating the same

Active matrix substrate and method of fabricating the same

Rectifying device and method of fabrication thereof