3045129

Information

• Patent Grant
• 3045129

• References
• Source

• Patent Number

  3,045,129

• Date Filed

  Not available

• Date Issued

  Tuesday, July 17, 1962
  62 years ago

• CPC

  • H01L29/78 - with field effect produced by an insulated gate
  • H01L21/24 - Alloying of impurity materials
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/66083 - the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • H01L29/68 - controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/73 - Bipolar junction transistors
  • H01L29/88 - Tunnel-effect diodes

• US Classifications

  • 327 - Miscellaneous active electrical nonlinear devices, circuits, and systems
  • 257 - Active solid-state devices