the doping structure being parallel to the channel length

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H01L29/1045

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1045the doping structure being parallel to the channel length

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 12,159,903
- Issue date Dec 3, 2024
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with undulating channel
- Patent number 12,125,884
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kevin Kyuheon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved temperature uniformity
- Patent number 12,074,198
- Issue date Aug 27, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of dopant deactivation underneath gate
- Patent number 12,068,374
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gated field effect transistor structure having shielded s...
- Patent number 12,027,622
- Issue date Jul 2, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Xiaoli Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 12,015,056
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device
- Patent number 11,996,478
- Issue date May 28, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
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Information Patent Grant
MOSFET devices and manufacturing methods thereof
- Patent number 11,984,505
- Issue date May 14, 2024
- Changxin Memory Technologies, Inc.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed level-shifter for power-conversion applications
- Patent number 11,942,942
- Issue date Mar 26, 2024
- Hong Kong Applied Science and Technology Research Institute Company Limited
- Chit Sang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage/power junction FET with all-around junction gate
- Patent number 11,869,983
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 11,869,968
- Issue date Jan 9, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having 2D channel layer
- Patent number 11,855,150
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having a gate structure and overlyin...
- Patent number 11,855,158
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hong-Shyang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 11,855,149
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor
- Patent number 11,855,202
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,824,093
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Masaki Miyazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC trench MOSFET with low on-resistance and switching loss
- Patent number 11,777,000
- Issue date Oct 3, 2023
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode amplifier optimization
- Patent number 11,742,408
- Issue date Aug 29, 2023
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor with gate poly contact...
- Patent number 11,721,738
- Issue date Aug 8, 2023
- Texas Instmments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,688,771
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor structure with buried channel and resurf region...
- Patent number 11,682,722
- Issue date Jun 20, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power devices having multiple gate trenches and metho...
- Patent number 11,664,434
- Issue date May 30, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with undulating channel
- Patent number 11,658,214
- Issue date May 23, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kevin Kyuheon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power converter, method of ma...
- Patent number 11,637,184
- Issue date Apr 25, 2023
- Mitsubishi Electric Corporation
- Kohei Adachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gated field effect transistor structure having shielded s...
- Patent number 11,637,201
- Issue date Apr 25, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Xiaoli Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical power MOSFET with channel including regions with di...
- Patent number 11,626,514
- Issue date Apr 11, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,610,990
- Issue date Mar 21, 2023
- Fuji Electric Co., Ltd.
- Hiroyuki Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with oxide liner in drift region
- Patent number 11,552,183
- Issue date Jan 10, 2023
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 11,552,170
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION
- Publication number 20240379877
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240313055
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Hirofumi NAGANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for High-Voltage Device
- Publication number 20240274669
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YuYing Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBI...
- Publication number 20240250128
- Publication date Jul 25, 2024
- DENSO CORPORATION
- HIDEYUKI UEHIGASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE
- Publication number 20240222504
- Publication date Jul 4, 2024
- Qorvo US, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20240097026
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20240096975
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-SHYANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE TERMINATION STRUCTURES AND METHODS OF MANUFACT...
- Publication number 20240088237
- Publication date Mar 14, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Balaji PADMANABHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
- Publication number 20240088228
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yun-Yuan WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICES WITH IMPROVED ON-RESISTANCE
- Publication number 20240047531
- Publication date Feb 8, 2024
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240047530
- Publication date Feb 8, 2024
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240014318
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL ORIENTED METAL-OXIDE-SEMICONDUCTOR, MOS DEVICE COMPRISING A...
- Publication number 20230402541
- Publication date Dec 14, 2023
- NEXPERIA B.V.
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE
- Publication number 20230387209
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD
- Publication number 20230369408
- Publication date Nov 16, 2023
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE
- Publication number 20230268396
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICAT...
- Publication number 20230261099
- Publication date Aug 17, 2023
- Sony Semiconductor Solutions Corporation
- KAZUKI KISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICES HAVING MULTIPLE GATE TRENCHES AND METHO...
- Publication number 20230261073
- Publication date Aug 17, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE WITH UNDULATING CHANNEL
- Publication number 20230253460
- Publication date Aug 10, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kevin Kyuheon CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230207680
- Publication date Jun 29, 2023
- Fuji Electric Co., Ltd.
- Hiroyuki FUJISAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230207687
- Publication date Jun 29, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DUAL WELLS
- Publication number 20230178652
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Xiang-Zheng BO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED TEMPERATURE UNIFORMITY
- Publication number 20230139205
- Publication date May 4, 2023
- Analog Power Conversion LLC
- Amaury GENDRON-HANSEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Superjunction Transistor Device
- Publication number 20230126534
- Publication date Apr 27, 2023
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20230101290
- Publication date Mar 30, 2023
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20230080932
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHEN-LIANG CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE
- Publication number 20230011246
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE SILICON CARBIDE POWER DEVICES
- Publication number 20220367640
- Publication date Nov 17, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH MOSFET WITH LOW ON-RESISTANCE AND SWITCHING LOSS
- Publication number 20220367636
- Publication date Nov 17, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS

the doping structure being parallel to the channel length

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power semiconductor device and method of fabricating the same

Methods for forming recesses in source/drain regions and devices fo...

MOSFET device with undulating channel

Semiconductor device with improved temperature uniformity

Method of dopant deactivation underneath gate

Insulated gated field effect transistor structure having shielded s...

Field effect transistor with controllable resistance

Transistor device

MOSFET devices and manufacturing methods thereof

High-speed level-shifter for power-conversion applications

Low voltage/power junction FET with all-around junction gate

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor device having 2D channel layer

Semiconductor device structure having a gate structure and overlyin...

Field effect transistor with controllable resistance

LDMOS transistor

Silicon carbide semiconductor device

SiC trench MOSFET with low on-resistance and switching loss

Cascode amplifier optimization

Laterally diffused metal oxide semiconductor with gate poly contact...

Method for manufacturing semiconductor device

Vertical transistor structure with buried channel and resurf region...

Semiconductor power devices having multiple gate trenches and metho...

MOSFET device with undulating channel

Silicon carbide semiconductor device, power converter, method of ma...

Insulated gated field effect transistor structure having shielded s...

Trench vertical power MOSFET with channel including regions with di...

Silicon carbide semiconductor device

Transistors with oxide liner in drift region

Semiconductor device including current spread region

Patents Applicationslast 30 patents

SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

Structure and Method for High-Voltage Device

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBI...

TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

SEMICONDUCTOR DEVICE TERMINATION STRUCTURES AND METHODS OF MANUFACT...

SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER

POWER DEVICES WITH IMPROVED ON-RESISTANCE

POWER SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

LDMOS TRANSISTOR AND METHOD OF FORMING THE SAME

LATERAL ORIENTED METAL-OXIDE-SEMICONDUCTOR, MOS DEVICE COMPRISING A...

INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE

POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD

FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICAT...

SEMICONDUCTOR POWER DEVICES HAVING MULTIPLE GATE TRENCHES AND METHO...

MOSFET DEVICE WITH UNDULATING CHANNEL

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

TRANSISTORS WITH DUAL WELLS

SEMICONDUCTOR DEVICE WITH IMPROVED TEMPERATURE UNIFORMITY

Superjunction Transistor Device

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE

PERFORMANCE SILICON CARBIDE POWER DEVICES

SIC TRENCH MOSFET WITH LOW ON-RESISTANCE AND SWITCHING LOSS