the final conductor layer next to the insulator being a metallic silicide

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H01L21/28097

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28097the final conductor layer next to the insulator being a metallic silicide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 12,354,876
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,308,248
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a work function layer having an oxygen-bl...
- Patent number 12,300,733
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having a work function material gradient
- Patent number 12,283,616
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 12,237,323
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts utilizing an inhibitor
- Patent number 12,166,092
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including a MOS trans...
- Patent number 12,033,858
- Issue date Jul 9, 2024
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside power rail and methods of fabri...
- Patent number 11,942,530
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,916,060
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors
- Patent number 11,856,790
- Issue date Dec 26, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor
- Patent number 11,824,057
- Issue date Nov 21, 2023
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,715,734
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 11,710,638
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts utilizing an inhibitor
- Patent number 11,670,691
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having blocks of source and drain silicides near the cha...
- Patent number 11,631,739
- Issue date Apr 18, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor, ferroelectric field effect transistor, and...
- Patent number 11,552,086
- Issue date Jan 10, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structure of an integrated transistor device and method of...
- Patent number 11,476,334
- Issue date Oct 18, 2022
- Intel Corporation
- Orb Acton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, semiconductor constructions, and methods of forming se...
- Patent number 11,424,256
- Issue date Aug 23, 2022
- Micron Technology, Inc.
- Deepak Thimmegowda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,398,383
- Issue date Jul 26, 2022
- Winbond Electronics Corp.
- Hsin-Huang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,393,809
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a doped work-...
- Patent number 11,387,344
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional semicond...
- Patent number 11,322,401
- Issue date May 3, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,309,190
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing insulated gate field effect transistor
- Patent number 11,289,581
- Issue date Mar 29, 2022
- Sony Corporation
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having a work function material gradient
- Patent number 11,282,933
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional logic de...
- Patent number 11,264,274
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside power rail and methods of fabri...
- Patent number 11,195,930
- Issue date Dec 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method for fabricating the same
- Patent number 11,158,499
- Issue date Oct 26, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Deok-Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts utilizing an inhibitor
- Patent number 11,152,475
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET HAVING A WORK FUNCTION MATERIAL GRADIENT
- Publication number 20250221004
- Publication date Jul 3, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20250169191
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR
- Publication number 20250107203
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387679
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...
- Publication number 20240312784
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRI...
- Publication number 20240258397
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20240153943
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR
- Publication number 20230326983
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure Passivating Species Drive-In Method and Structure Fo...
- Publication number 20230317457
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230275130
- Publication date Aug 31, 2023
- Changxin Memory Technologies, Inc.
- SEMYEONG JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and...
- Publication number 20230121892
- Publication date Apr 20, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRE-DEPOSITION TREATMENT OF A WORK-FUNCTION METAL LAYER
- Publication number 20230106314
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen TSAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...
- Publication number 20220415658
- Publication date Dec 29, 2022
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture
- Publication number 20220336619
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20220336440
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20220320071
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220246442
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING A WORK FUNCTION MATERIAL GRADIENT
- Publication number 20220216318
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRI...
- Publication number 20220093766
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Source/Drain Contacts Utilizing an Inhibitor
- Publication number 20220052167
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210398813
- Publication date Dec 23, 2021
- WINBOND ELECTRONICS CORP.
- Hsin-Huang SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20210375865
- Publication date Dec 2, 2021
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure Passivating Species Drive-In Method and Structure Fo...
- Publication number 20210287905
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR FABRICATING THE SAME
- Publication number 20210280412
- Publication date Sep 9, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- DEOK-YONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Source/Drain Contacts Utilizing an Inhibitor
- Publication number 20210273062
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210225660
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20210193643
- Publication date Jun 24, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL SEMICOND...
- Publication number 20210098294
- Publication date Apr 1, 2021
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20210005607
- Publication date Jan 7, 2021
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS

the final conductor layer next to the insulator being a metallic silicide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate structure passivating species drive-in method and structure fo...

Semiconductor device and method of manufacture

Semiconductor device with a work function layer having an oxygen-bl...

FinFET having a work function material gradient

Semiconductor device having improved electrostatic discharge protec...

Semiconductor device with fin transistors and manufacturing method...

Method for forming source/drain contacts utilizing an inhibitor

Method for fabricating a semiconductor device including a MOS trans...

Semiconductor devices with backside power rail and methods of fabri...

Semiconductor device having improved electrostatic discharge protec...

Ferroelectric capacitors

Semiconductor device with fin-type field effect transistor

Semiconductor device having improved electrostatic discharge protec...

Gate structure passivating species drive-in method and structure fo...

Method for forming source/drain contacts utilizing an inhibitor

Transistor having blocks of source and drain silicides near the cha...

Ferroelectric capacitor, ferroelectric field effect transistor, and...

Silicide structure of an integrated transistor device and method of...

Transistors, semiconductor constructions, and methods of forming se...

Semiconductor structure and method for forming the same

Semiconductor device having improved electrostatic discharge protec...

Method of manufacturing a semiconductor device having a doped work-...

Reverse contact and silicide process for three-dimensional semicond...

Semiconductor device and method of manufacture

Method for manufacturing insulated gate field effect transistor

FinFET having a work function material gradient

Reverse contact and silicide process for three-dimensional logic de...

Semiconductor devices with backside power rail and methods of fabri...

Semiconductor component and method for fabricating the same

Method for forming source/drain contacts utilizing an inhibitor

Patents Applicationslast 30 patents

FINFET HAVING A WORK FUNCTION MATERIAL GRADIENT

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...

SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRI...

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR

Gate Structure Passivating Species Drive-In Method and Structure Fo...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and...

METHODS FOR PRE-DEPOSITION TREATMENT OF A WORK-FUNCTION METAL LAYER

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...

Semiconductor Devices and Methods of Manufacture

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

Semiconductor Device and Method of Manufacture

FINFET HAVING A WORK FUNCTION MATERIAL GRADIENT

SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRI...

Method for Forming Source/Drain Contacts Utilizing an Inhibitor

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

Gate Structure Passivating Species Drive-In Method and Structure Fo...

SEMICONDUCTOR COMPONENT AND METHOD FOR FABRICATING THE SAME

Method for Forming Source/Drain Contacts Utilizing an Inhibitor

Semiconductor Device and Method of Manufacture

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL SEMICOND...

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...