the flow of the reactive gases

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CPC
C30B25/165

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/165the flow of the reactive gases

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Patents Grantslast 30 patents

Information Patent Grant
Chemical source vessel with dip tube
- Patent number 12,297,540
- Issue date May 13, 2025
- ASM IP Holding B.V.
- Andrew Michael Yednak
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor deposition monitoring device
- Patent number 12,283,497
- Issue date Apr 22, 2025
- Samsung Electronics Co., Ltd.
- Young Uk Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide ingot and method of fabricating the same
- Patent number 12,276,043
- Issue date Apr 15, 2025
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature-controlled chemical delivery system and reactor system...
- Patent number 12,163,225
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Carl Louis White
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Superlattice layer, LED epitaxial structure, display device, and me...
- Patent number 12,057,521
- Issue date Aug 6, 2024
- CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Wen Yang Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for silicon germanium uniformity control using multiple pre...
- Patent number 12,057,314
- Issue date Aug 6, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for the deposition of monocrystalline or polycrystalline tin...
- Patent number 12,000,062
- Issue date Jun 4, 2024
- United States of America as represented by the Secretary of the Air Force
- Bruce B. Claflin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming structures including silicon germanium and silic...
- Patent number 11,996,289
- Issue date May 28, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride semiconductor device and production method therefor
- Patent number 11,955,581
- Issue date Apr 9, 2024
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a source/drain
- Patent number 11,929,401
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nucleation layer deposition method
- Patent number 11,887,848
- Issue date Jan 30, 2024
- Aixtron SE
- Christof Martin Mauder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing apparatus for a group-III nitride crystal comprising...
- Patent number 11,879,184
- Issue date Jan 23, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial wafer production system for performing a correction based...
- Patent number 11,873,577
- Issue date Jan 16, 2024
- Sumco Corporation
- Naoyuki Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,859,310
- Issue date Jan 2, 2024
- Azur Space Solar Power GmbH
- Clemens Waechter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compositions and aggregates comprising boron nitride nanotube struc...
- Patent number 11,851,326
- Issue date Dec 26, 2023
- BNNano, Inc.
- Jason Edward Taylor
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Chemical source vessel with dip tube
- Patent number 11,781,221
- Issue date Oct 10, 2023
- ASM IP Holding B.V.
- Andrew Michael Yednak
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing suspended graphene support film by selecti...
- Patent number 11,760,641
- Issue date Sep 19, 2023
- Peking University
- Hailin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for processing a substrate by oscillating a boundary layer o...
- Patent number 11,761,080
- Issue date Sep 19, 2023
- Applied Materials, Inc.
- Tsung-Han Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a group III-nitride crystal comprising sup...
- Patent number 11,753,739
- Issue date Sep 12, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for applying a carbon layer to a substrate comprising introd...
- Patent number 11,746,415
- Issue date Sep 5, 2023
- CARBONCOMPETENCE GMBH
- Doris Steinmuller-Nethl
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal chemical vapor deposited synthetic diamond materials...
- Patent number 11,746,436
- Issue date Sep 5, 2023
- Element Six Technologies Limited
- Harpreet Kaur Dhillon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase growth apparatus and vapor phase growth method
- Patent number 11,749,525
- Issue date Sep 5, 2023
- NUFLARE TECHNOLOGY, INC.
- Yoshiaki Daigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Superconducting compounds and methods for making the same
- Patent number 11,683,997
- Issue date Jun 20, 2023
- Quantum Designed Materials Ltd.
- Refael Gatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor delivery device, methods of manufacture and methods of use th...
- Patent number 11,680,318
- Issue date Jun 20, 2023
- Edwards Semiconductor Solutions LLC
- Egbert Woelk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HVPE apparatus and methods for growing indium nitride and indium ni...
- Patent number 11,661,673
- Issue date May 30, 2023
- Ostendo Technologies, Inc.
- Alexander L. Syrkin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE SUPPORT DEVICE FOR A REACTION CHAMBER OF AN EPITAXIAL REA...
- Publication number 20250140597
- Publication date May 1, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGULAR SPEED MEASUREMENT SYSTEM FOR SUBSTRATES USED IN EPITAXIAL D...
- Publication number 20250129508
- Publication date Apr 24, 2025
- LPE S.p.A.
- Maurilio Giuseppe Meschia
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES
- Publication number 20250132154
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
VAPOR PHASE GROWTH APPARATUS
- Publication number 20250129470
- Publication date Apr 24, 2025
- NUFLARE TECHNOLOGY, INC.
- Yoshiaki DAIGO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR S...
- Publication number 20250118554
- Publication date Apr 10, 2025
- KYOCERA CORPORATION
- Yuta AOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...
- Publication number 20250109524
- Publication date Apr 3, 2025
- Wisconsin Alumni Research Foundation
- Shubhra S. Pasayat
- C30 - CRYSTAL GROWTH
Information Patent Application
CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...
- Publication number 20250092571
- Publication date Mar 20, 2025
- UT-Battelle, LLC
- Ilia N. Ivanov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...
- Publication number 20250092572
- Publication date Mar 20, 2025
- Peking University
- Xinqiang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR GAS DELIVERY IN A PROCESSING CHAMBER
- Publication number 20250075369
- Publication date Mar 6, 2025
- Applied Materials, Inc.
- Ryan Sungbin HU
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Process Control in Semiconductor Manufacturing
- Publication number 20250034753
- Publication date Jan 30, 2025
- ROBERT BOSCH GmbH
- Stella Maris Van Eek
- C30 - CRYSTAL GROWTH
Information Patent Application
VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER...
- Publication number 20250003112
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Ala MORADIAN
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES
- Publication number 20240410080
- Publication date Dec 12, 2024
- Honda Motor Co., Ltd.
- Xufan LI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
LIQUID PRECURSOR CONTAINERS, LIQUID PRECURSOR SYSTEMS AND SEMICONDU...
- Publication number 20240376634
- Publication date Nov 14, 2024
- ASM IP HOLDING B.V.
- Krishnaswamy Mahadevan
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...
- Publication number 20240332016
- Publication date Oct 3, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATE
- Publication number 20240309552
- Publication date Sep 19, 2024
- Siltronic AG
- Walter HAECKL
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SILICON CARBIDE INGOT
- Publication number 20240271322
- Publication date Aug 15, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PROCESSING EPITAXIAL SEMICONDUCTOR WAFERS
- Publication number 20240218562
- Publication date Jul 4, 2024
- GLOBALWAFERS CO., LTD.
- Manabu Hamano
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER
- Publication number 20240213022
- Publication date Jun 27, 2024
- ASM IP HOLDING B.V.
- Brendan Marozas
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Forming a Source/Drain
- Publication number 20240213330
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFERS CONTAINING A GAS-PHA...
- Publication number 20240200226
- Publication date Jun 20, 2024
- Siltronic AG
- Ronny Hengst
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...
- Publication number 20240183064
- Publication date Jun 6, 2024
- Peking University
- Kaihui LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20240183073
- Publication date Jun 6, 2024
- Denso Corporation
- Soma SAKAKIBARA
- C01 - INORGANIC CHEMISTRY

the flow of the reactive gases

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Chemical source vessel with dip tube

Semiconductor deposition monitoring device

Silicon carbide ingot and method of fabricating the same

Method for depositing boron containing silicon germanium layers

Method of fabricating hexagonal boron nitride

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Temperature-controlled chemical delivery system and reactor system...

Superlattice layer, LED epitaxial structure, display device, and me...

Methods for silicon germanium uniformity control using multiple pre...

Method for the deposition of monocrystalline or polycrystalline tin...

Methods of forming structures including silicon germanium and silic...

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Group III nitride semiconductor device and production method therefor

Method of forming a source/drain

Nucleation layer deposition method

Manufacturing apparatus for a group-III nitride crystal comprising...

Epitaxial wafer production system for performing a correction based...

Vapor phase epitaxy method

Manufacturing method for a group-III nitride crystal that requires...

Compositions and aggregates comprising boron nitride nanotube struc...

Chemical source vessel with dip tube

Method for manufacturing suspended graphene support film by selecti...

Method for processing a substrate by oscillating a boundary layer o...

Method for manufacturing a group III-nitride crystal comprising sup...

Method for applying a carbon layer to a substrate comprising introd...

Single crystal chemical vapor deposited synthetic diamond materials...

Vapor phase growth apparatus and vapor phase growth method

Superconducting compounds and methods for making the same

Vapor delivery device, methods of manufacture and methods of use th...

HVPE apparatus and methods for growing indium nitride and indium ni...

Patents Applicationslast 30 patents

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

SUBSTRATE SUPPORT DEVICE FOR A REACTION CHAMBER OF AN EPITAXIAL REA...

ANGULAR SPEED MEASUREMENT SYSTEM FOR SUBSTRATES USED IN EPITAXIAL D...

METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES

VAPOR PHASE GROWTH APPARATUS

MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR S...

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...

CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...

METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...

METHOD AND APPARATUS FOR GAS DELIVERY IN A PROCESSING CHAMBER

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

Epitaxy Process Control in Semiconductor Manufacturing

VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER...

CVD SINGLE CRYSTAL DIAMOND

PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

LIQUID PRECURSOR CONTAINERS, LIQUID PRECURSOR SYSTEMS AND SEMICONDU...

METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...

METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATE

METHOD OF FABRICATING SILICON CARBIDE INGOT

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

METHODS OF PROCESSING EPITAXIAL SEMICONDUCTOR WAFERS

METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER

Method of Forming a Source/Drain

PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFERS CONTAINING A GAS-PHA...

METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...