the gate comprising a layer which is used for its ferroelectric properties

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H01L29/78391

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/78391the gate comprising a layer which is used for its ferroelectric properties

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,243,932
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including ferroelectric memory and methods of...
- Patent number 12,243,573
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chenchen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric capacitor, ferroelectric field effect transistor, and...
- Patent number 12,237,112
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency switch
- Patent number 12,237,863
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device, manufacturing method of the ferroelect...
- Patent number 12,238,932
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET gate engineerinng with dipole films
- Patent number 12,230,688
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing the same
- Patent number 12,230,711
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric random-access memory (FeRAM)
- Patent number 12,232,327
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,232,329
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array contact structures
- Patent number 12,225,731
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain switching devices and methods of manufacturing the same
- Patent number 12,224,346
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 12,223,994
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 12,219,776
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,207,474
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor device
- Patent number 12,205,951
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,205,625
- Issue date Jan 21, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Hiromichi Godo
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative differential resistance device
- Patent number 12,206,021
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Kilsu Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Elevationally-extending transistors, devices comprising elevational...
- Patent number 12,199,182
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device structure and manufacturing method thereof
- Patent number 12,200,943
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure, semiconductor device including the same, and man...
- Patent number 12,191,389
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,178,053
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Polarization enhancement structure for enlarging memory window
- Patent number 12,176,433
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cerium-doped ferroelectric materials and related devices and methods
- Patent number 12,166,098
- Issue date Dec 10, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Paul C. McIntyre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072107
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- SUNGIL PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND FORMATION METHOD THEREOF
- Publication number 20250072030
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250063740
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...
- Publication number 20250054546
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250054523
- Publication date Feb 13, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi AOKI
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NE...
- Publication number 20250056844
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Hyunjae LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW
- Publication number 20250048682
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20250048647
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20250040144
- Publication date Jan 30, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250040145
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Bonjae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20250031380
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE BASED ON DIELECTRIC MATERIAL CONTAINING METAL...
- Publication number 20250031379
- Publication date Jan 23, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250022876
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sung Min KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...
- Publication number 20250024685
- Publication date Jan 16, 2025
- Sunrise Memory Corporation
- Jie Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING A T...
- Publication number 20250024686
- Publication date Jan 16, 2025
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250016977
- Publication date Jan 9, 2025
- SK HYNIX INC.
- Jun Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20250008738
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETION MODE FERROELECTRIC TRANSISTORS
- Publication number 20250006239
- Publication date Jan 2, 2025
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...
- Publication number 20240428838
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Sijung YOO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FEFET DEVICE
- Publication number 20240431116
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Anti-Fuse Device by Ferroelectric Characteristic
- Publication number 20240413078
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JU CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE

the gate comprising a layer which is used for its ferroelectric properties

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Semiconductor devices including ferroelectric memory and methods of...

Ferroelectric capacitor, ferroelectric field effect transistor, and...

Radio frequency switch

Ferroelectric memory device, manufacturing method of the ferroelect...

MOSFET gate engineerinng with dipole films

Electronic device and method of manufacturing the same

Three-dimensional ferroelectric random-access memory (FeRAM)

Stacked ferroelectric structure

Memory array contact structures

Domain switching devices and methods of manufacturing the same

Memory arrays, ferroelectric transistors, and methods of reading an...

Three-dimensional semiconductor device and method of fabricating th...

Ferroelectric devices including a single crystalline ferroelectric...

Semiconductor device and manufacturing method thereof

Stacked ferroelectric structure

Complementary metal oxide semiconductor device

Semiconductor device and electronic device

Negative differential resistance device

Three-dimensional memory device

Elevationally-extending transistors, devices comprising elevational...

Memory device structure and manufacturing method thereof

Layered structure, semiconductor device including the same, and man...

Ribbon or wire transistor stack with selective dipole threshold vol...

Memory device and method of forming the same

Polarization enhancement structure for enlarging memory window

Gate-all-around device with trimmed channel and dipoled dielectric...

Cerium-doped ferroelectric materials and related devices and methods

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Patents Applicationslast 30 patents

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

DEVICE AND FORMATION METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

MEMORY DEVICE AND METHOD OF FORMING THE SAME

TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NE...

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

SEMICONDUCTOR DEVICE BASED ON DIELECTRIC MATERIAL CONTAINING METAL...

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...

FERROELECTRIC SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING A T...

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

METHOD OF FORMING MEMORY DEVICE

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

DEPLETION MODE FERROELECTRIC TRANSISTORS

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...

FEFET DEVICE

Anti-Fuse Device by Ferroelectric Characteristic

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...