the gate comprising a layer which is used for its ferroelectric properties

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H01L29/78391

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/78391the gate comprising a layer which is used for its ferroelectric properties

Industries

Patents Grantslast 30 patents

Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization enhancement structure for enlarging memory window
- Patent number 12,176,433
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,178,053
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cerium-doped ferroelectric materials and related devices and methods
- Patent number 12,166,098
- Issue date Dec 10, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Paul C. McIntyre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming three-dimensional memory devices
- Patent number 12,167,608
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,167,609
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with ferroelectric layer
- Patent number 12,160,994
- Issue date Dec 3, 2024
- Kioxia Corporation
- Tsunehiro Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 12,154,965
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, ternary inverter comprising same, and transistor manufa...
- Patent number 12,154,950
- Issue date Nov 26, 2024
- UNIST (Ulsan National Institute of Science and Technology)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including ferroelectri...
- Patent number 12,148,829
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wilman Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,148,828
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,136,465
- Issue date Nov 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET of 3D structure for capacitance matching
- Patent number 12,136,672
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 12,133,392
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,133,393
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Do Young Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an upper contact in contact with a s...
- Patent number 12,132,044
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Sung Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method of extracting defect...
- Patent number 12,132,109
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Hagyoul Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cocktail layer over gate dielectric layer of FET FeRAM
- Patent number 12,127,411
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETION MODE FERROELECTRIC TRANSISTORS
- Publication number 20250006239
- Publication date Jan 2, 2025
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20250008738
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...
- Publication number 20240428838
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Sijung YOO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FEFET DEVICE
- Publication number 20240431116
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Anti-Fuse Device by Ferroelectric Characteristic
- Publication number 20240413078
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JU CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FERROELECTRIC MEMORY DEVICE
- Publication number 20240397725
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME
- Publication number 20240397726
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER
- Publication number 20240397728
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A VERTICAL MEMORY DEVICE AND AN ELEC...
- Publication number 20240397727
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS
- Publication number 20240395933
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240389334
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20240389341
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389349
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Containing Ferroelectric Transistors, and Met...
- Publication number 20240385713
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Pankaj Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20240387685
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387710
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240389343
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MIN-KUN DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389344
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...
- Publication number 20240389340
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF TRANSISTOR AND MANUFACTURING METHOD OF INTE...
- Publication number 20240387727
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Isolation Structures
- Publication number 20240379778
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Chiang
- G11 - INFORMATION STORAGE

the gate comprising a layer which is used for its ferroelectric properties

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ribbon or wire transistor stack with selective dipole threshold vol...

Polarization enhancement structure for enlarging memory window

Memory device and method of forming the same

Gate-all-around device with trimmed channel and dipoled dielectric...

Cerium-doped ferroelectric materials and related devices and methods

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Method of manufacturing semiconductor device and associated memory...

Semiconductor device

Methods of forming three-dimensional memory devices

Semiconductor structure and method of forming the same

Structures for a ferroelectric field-effect transistor and related...

Memory device with ferroelectric layer

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Transistor, ternary inverter comprising same, and transistor manufa...

Semiconductor device and method

Method of manufacturing semiconductor device including ferroelectri...

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Ferroelectric random-access memory cell

Semiconductor device and manufacturing method thereof

Semiconductor device

Semiconductor device and electronic device

Negative-capacitance and ferroelectric field-effect transistor (NCF...

FeFET of 3D structure for capacitance matching

Memory device and forming method thereof

Method of manufacturing semiconductor device

Semiconductor device including an upper contact in contact with a s...

Ferroelectric semiconductor device and method of extracting defect...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Cocktail layer over gate dielectric layer of FET FeRAM

Patents Applicationslast 30 patents

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

DEPLETION MODE FERROELECTRIC TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

METHOD OF FORMING MEMORY DEVICE

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...

FEFET DEVICE

Anti-Fuse Device by Ferroelectric Characteristic

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

ANTI-FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME

FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER

SEMICONDUCTOR DEVICE INCLUDING A VERTICAL MEMORY DEVICE AND AN ELEC...

MEMORY DEVICE AND FORMING METHOD THEREOF

FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS

METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Integrated Assemblies Containing Ferroelectric Transistors, and Met...

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...

MANUFACTURING METHOD OF TRANSISTOR AND MANUFACTURING METHOD OF INTE...

Memory Array Isolation Structures