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the gate dielectric having a multilayered structure
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
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the gate dielectric having a multilayered structure
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π-conjugated boron compound, electronic device, and methods respect...
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Konica Minolta, Inc.
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11,456,351
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Samsung Electronics Co., Ltd.
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11,165,031
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Nov 2, 2021
Yunnan University
Zhenghong Lu
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11,165,032
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Taiwan Semiconductor Manufacturing Co., Ltd
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11,158,807
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Oct 26, 2021
Taiwan Semiconductor Manufacturing Company, Ltd
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Gate insulating layer having a plurality of silicon oxide layer wit...
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10,892,332
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Kabushiki Kaisha Toshiba
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Japan Display Inc.
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Apparatus with graphene layers intercalated with ion gel
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Nokia Technologies Oy
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10,475,936
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Tsinghua University
Yu-Jia Huo
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Method for preparing layered metal oxide field effect material
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10,475,933
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Yunnan University
Zhenghong Lu
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Tsinghua University
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Triptycene derivative useful as material for forming self-assembled...
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Japan Science and Technology Agency
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Apr 16, 2019
The Regents of the University of California
Cengiz S Ozkan
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Hybrid high electron mobility transistor and active matrix structure
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10,256,276
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International Business Machines Corporation
Ali Afzali-Ardakani
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Thin film transistor and manufacturing method thereof, display subs...
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10,170,717
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BOE TECHNOLOGY GROUP CO., LTD
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Curable polymeric materials and their use for fabricating electroni...
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10,147,895
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Flexterra, Inc.
Shaofeng Lu
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Hybrid high electron mobility transistor and active matrix structure
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10,115,773
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Oct 30, 2018
International Business Machines Corporation
Ali Afzali-Ardakani
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Semiconductor device and display device having dissimilar semicondu...
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10,090,332
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Oct 2, 2018
Japan Display Inc.
Yuichiro Hanyu
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Non-volatile memory device including nano floating gate
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10,038,068
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Jul 31, 2018
SK Innovation Co., Ltd.
Jun-Hyung Kim
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Organic semiconductor element, manufacturing method thereof, compou...
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9,932,441
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Apr 3, 2018
FUJIFILM Corporation
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20230060340
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Mar 2, 2023
TSINGHUA UNIVERSITY
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20230015172
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20220328695
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20220302389
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Sep 22, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...
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20220302267
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Sep 22, 2022
Samsung Electronics Co., Ltd.
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20220293873
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20220263036
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FlexEnable Limited
Rashmi Sachin BHINTADE
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20210098724
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Apr 1, 2021
Industry-University Cooperation Foundation Hanyang University
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20200313103
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Oct 1, 2020
FLEXENABLE LIMITED
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CONDUCTOR ETCHING FOR PRODUCING THIN-FILM TRANSISTOR DEVICES
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Aug 6, 2020
FLEXENABLE LIMITED
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FLEXENABLE LIMITED
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LAYERED METAL OXIDE FIELD EFFECT MATERIAL AND ITS APPLICATION
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Jan 2, 2020
Yunnan University
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PI-CONJUGATED BORON COMPOUND, ELECTRONIC DEVICE, AND METHODS RESPEC...
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HYBRID HIGH ELECTRON MOBILITY TRANSISTOR AND ACTIVE MATRIX STRUCTURE
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20190237511
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Aug 1, 2019
International Business Machines Corporation
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SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
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Nov 15, 2018
Japan Display Inc.
Yuichiro HANYU
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FUJIFILM CORPORATION
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TSINGHUA UNIVERSITY
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Apr 26, 2018
BOE TECHNOLOGY GROUP CO., LTD.
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20180059496
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BOE TECHNOLOGY GROUP CO., LTD.
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20170317302
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Nov 2, 2017
NATIONAL CHIAO-TUNG UNIVERSITY
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Oct 26, 2017
Nikon Corporation
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20170279058
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Japan Science and Technology Agency
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