the insulating material comprising a metallic compound

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H01L29/517

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/517the insulating material comprising a metallic compound

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Oxide semiconductor transistor structure in 3-d device and methods...
- Patent number 12,218,250
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with etch stop layer for reducing RC...
- Patent number 12,218,241
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of manufacture
- Patent number 12,211,701
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and device for forming metal gate electrodes for transistors
- Patent number 12,205,819
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device
- Patent number 12,206,020
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,206,008
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,199,164
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 12,185,544
- Issue date Dec 31, 2024
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,743
- Issue date Dec 31, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cool electron erasing in thin-film storage transistors
- Patent number 12,183,834
- Issue date Dec 31, 2024
- SUNRISE MEMORY CORPORATION
- Sayeef Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a dummy fin contacting a gate isolation region
- Patent number 12,176,415
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors and arrays of elevationally-extending strings of memory...
- Patent number 12,170,324
- Issue date Dec 17, 2024
- Ramanathan Gandhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming a semiconductor device structure and related se...
- Patent number 12,166,099
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Chiyu Zhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 12,166,100
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite word line structure and method...
- Patent number 12,160,988
- Issue date Dec 3, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,154,969
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 12,148,799
- Issue date Nov 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structures with multiple threshold voltage offerings...
- Patent number 12,142,640
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing metal gate overhang by forming a top-wide bottom-narrow du...
- Patent number 12,142,664
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20250056860
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD
- Publication number 20250046620
- Publication date Feb 6, 2025
- Hitachi High-Tech Corporation
- Kenta NAKAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20250040233
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A BOOSTER LAYER AND METHOD FOR FABRICATIN...
- Publication number 20250022655
- Publication date Jan 16, 2025
- SK HYNIX INC.
- Se-Hun KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...
- Publication number 20240429232
- Publication date Dec 26, 2024
- STMicroelectronics International N.V.
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE
- Publication number 20240421159
- Publication date Dec 19, 2024
- Japan Display Inc.
- Isao SUZUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240413222
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY
- Publication number 20240413221
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...
- Publication number 20240405092
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Armin TILKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240395896
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION RESISTANT SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURI...
- Publication number 20240387607
- Publication date Nov 21, 2024
- Mitsubishi Electric Corporation
- Hajime SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...
- Publication number 20240387639
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240387672
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20240387686
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...
- Publication number 20240387687
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...
- Publication number 20240387277
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Hung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20240387712
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240387741
- Publication date Nov 21, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379798
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION
- Publication number 20240379818
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240381653
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEM...
- Publication number 20240379381
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20240379811
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...
- Publication number 20240371698
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS

the insulating material comprising a metallic compound

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Oxide semiconductor transistor structure in 3-d device and methods...

Gate structures for semiconductor devices

Semiconductor device structure with etch stop layer for reducing RC...

Semiconductor device and a method for fabricating the same

Semiconductor device and manufacturing method thereof

Gate structure of semiconductor device and method of manufacture

Method and device for forming metal gate electrodes for transistors

High voltage semiconductor device

Epitaxial oxide materials, structures, and devices

Semiconductor device

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device and a semiconductor...

Integrated assemblies having vertically-spaced channel material seg...

Method of forming a semiconductor device by driving hydrogen into a...

Semiconductor device

Cool electron erasing in thin-film storage transistors

Device with a dummy fin contacting a gate isolation region

Semiconductor device with profiled work-function metal gate electro...

Semiconductor device with fin transistors and manufacturing method...

Method of manufacturing gate structure and method of manufacturing...

Transistors and arrays of elevationally-extending strings of memory...

Method of manufacturing semiconductor device and associated memory...

Methods for forming a semiconductor device structure and related se...

Nanosheet device with dipole dielectric layer and methods of formin...

Semiconductor device with composite word line structure and method...

Semiconductor device structure with metal gate stack

Epitaxial oxide materials, structures, and devices

Semiconductor device, method for manufacturing semiconductor device...

Semiconductor structures with multiple threshold voltage offerings...

Reducing metal gate overhang by forming a top-wide bottom-narrow du...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

PLASMA PROCESSING METHOD

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE WITH A BOOSTER LAYER AND METHOD FOR FABRICATIN...

SILICON CARBIDE DEVICE

INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...

DISPLAY DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...

HIGH-K GATE DIELECTRIC

RADIATION RESISTANT SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURI...

SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

Semiconductor Device and Method of Forming the Same

NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...

FinFET Device With High-K Metal Gate Stack

MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

TRANSISTOR GATE STRUCTURES

DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION

MEMORY DEVICE AND METHOD OF FORMING THE SAME

PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEM...

INTEGRATED CIRCUIT METAL GATE STRUCTURE

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE