the insulating material comprising a metallic compound

Industry

CPC
H01L29/517

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/517the insulating material comprising a metallic compound

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 12,185,544
- Issue date Dec 31, 2024
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,743
- Issue date Dec 31, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cool electron erasing in thin-film storage transistors
- Patent number 12,183,834
- Issue date Dec 31, 2024
- SUNRISE MEMORY CORPORATION
- Sayeef Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a dummy fin contacting a gate isolation region
- Patent number 12,176,415
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors and arrays of elevationally-extending strings of memory...
- Patent number 12,170,324
- Issue date Dec 17, 2024
- Ramanathan Gandhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming a semiconductor device structure and related se...
- Patent number 12,166,099
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Chiyu Zhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 12,166,100
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite word line structure and method...
- Patent number 12,160,988
- Issue date Dec 3, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,154,969
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 12,148,799
- Issue date Nov 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structures with multiple threshold voltage offerings...
- Patent number 12,142,640
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing metal gate overhang by forming a top-wide bottom-narrow du...
- Patent number 12,142,664
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with high-K metal gate stack
- Patent number 12,142,685
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performing annealing process to improve Fin quality of a FinFET sem...
- Patent number 12,142,490
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with gate and res...
- Patent number 12,136,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array
- Patent number 12,133,390
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with patterned fin structure
- Patent number 12,131,901
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 12,132,051
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,125,706
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with reduced defect and methods of forming same
- Patent number 12,125,892
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...
- Publication number 20240429232
- Publication date Dec 26, 2024
- STMicroelectronics International N.V.
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE
- Publication number 20240421159
- Publication date Dec 19, 2024
- Japan Display Inc.
- Isao SUZUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240413222
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY
- Publication number 20240413221
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...
- Publication number 20240405092
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Armin TILKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240395896
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION RESISTANT SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURI...
- Publication number 20240387607
- Publication date Nov 21, 2024
- Mitsubishi Electric Corporation
- Hajime SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...
- Publication number 20240387639
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240387672
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20240387686
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...
- Publication number 20240387687
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...
- Publication number 20240387277
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Hung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20240387712
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240387741
- Publication date Nov 21, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379798
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION
- Publication number 20240379818
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240381653
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEM...
- Publication number 20240379381
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20240379811
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...
- Publication number 20240371698
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME
- Publication number 20240371964
- Publication date Nov 7, 2024
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...
- Publication number 20240371878
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Work Functions of Complementary Transistors
- Publication number 20240371997
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...
- Publication number 20240363750
- Publication date Oct 31, 2024
- RENESAS ELECTRONICS CORPORATION
- Kazuya UEJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...
- Publication number 20240365537
- Publication date Oct 31, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi LAI
- H01 - BASIC ELECTRIC ELEMENTS

the insulating material comprising a metallic compound

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated assemblies having vertically-spaced channel material seg...

Method of forming a semiconductor device by driving hydrogen into a...

Semiconductor device

Cool electron erasing in thin-film storage transistors

Device with a dummy fin contacting a gate isolation region

Semiconductor device with profiled work-function metal gate electro...

Semiconductor device with fin transistors and manufacturing method...

Method of manufacturing gate structure and method of manufacturing...

Transistors and arrays of elevationally-extending strings of memory...

Method of manufacturing semiconductor device and associated memory...

Methods for forming a semiconductor device structure and related se...

Nanosheet device with dipole dielectric layer and methods of formin...

Semiconductor device with composite word line structure and method...

Semiconductor device structure with metal gate stack

Epitaxial oxide materials, structures, and devices

Semiconductor device, method for manufacturing semiconductor device...

Semiconductor structures with multiple threshold voltage offerings...

Reducing metal gate overhang by forming a top-wide bottom-narrow du...

FinFET device with high-K metal gate stack

Performing annealing process to improve Fin quality of a FinFET sem...

Integrated circuit with doped low-k sidewall spacers for gate stacks

Method for forming semiconductor device structure with gate and res...

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Methods for forming recesses in source/drain regions and devices fo...

Memory array

Semiconductor structure with patterned fin structure

Method of manufacturing semiconductor devices and semiconductor dev...

Method and epitaxial oxide device with impact ionization

Semiconductor device and method of manufacture

Transistors with reduced defect and methods of forming same

Patents Applicationslast 30 patents

SILICON CARBIDE DEVICE

INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...

DISPLAY DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...

HIGH-K GATE DIELECTRIC

FinFET Device With High-K Metal Gate Stack

RADIATION RESISTANT SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURI...

SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

Semiconductor Device and Method of Forming the Same

NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...

MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

TRANSISTOR GATE STRUCTURES

DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION

MEMORY DEVICE AND METHOD OF FORMING THE SAME

PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEM...

INTEGRATED CIRCUIT METAL GATE STRUCTURE

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE

TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...

Tuning Work Functions of Complementary Transistors

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...

SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...