the insulator being formed after the semiconductor body, the semiconductor being a III-V compound

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28264the insulator being formed after the semiconductor body, the semiconductor being a III-V compound

Industries

Patents Grantslast 30 patents

Information Patent Grant
Structure and formation method of semiconductor device structure wi...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
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- United Microelectronics Corp.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
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- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
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Information Patent Grant
Wafer level sequencing flow cell fabrication
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- Issue date Aug 6, 2024
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- Shifeng Li
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Semiconductor power device and method for producing same
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- Issue date Jun 11, 2024
- Rohm Co., Ltd.
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Semiconductor structure
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Issue date Oct 31, 2023
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Information Patent Grant
Nitride semiconductor device and fabrication method therefor
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Information Patent Grant
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Information Patent Grant
Method of manufacturing a HEMT device with reduced gate leakage cur...
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Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar transistors with wrap-around gates and wrap-around source an...
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- Intel Corporation
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Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon rich nitride layer between a plurality of semiconductor layers
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- Issue date Nov 29, 2022
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- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectrics materials
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Information Patent Grant
Method of making a high power transistor with gate oxide barriers
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Information Patent Grant
Semiconductor structure
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Wafer level sequencing flow cell fabrication
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- Jiacheng Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
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- Issue date Jun 14, 2022
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- Tatsuo Shimizu
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Information Patent Grant
Semiconductor device
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Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
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- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 11,276,574
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- Rohm Co., Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based semiconductor device and manufacturing method...
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- Issue date Feb 22, 2022
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- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors and methods for fabricating the...
- Patent number 11,227,943
- Issue date Jan 18, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high-κ dielectric layer and method for...
- Patent number 11,201,055
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with ultra low drain leakage
- Patent number 11,201,212
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
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- H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
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- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
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- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240304447
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- Rohm Co., Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
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SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
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- Intel Corporation
- Mahmut Sami Kavrik
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SEMICONDUCTOR STRUCTURE
- Publication number 20240170580
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- MEDIATEK INC.
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SEMICONDUCTOR ELEMENT WITH SHIELDING
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- ROBERT BOSCH GmbH
- Christian Huber
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Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
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STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20230378253
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- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR STRUCTURE
- Publication number 20220336680
- Publication date Oct 20, 2022
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
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WAFER LEVEL SEQUENCING FLOW CELL FABRICATION
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- MGI TECH CO., LTD.
- Shifeng Li
- H01 - BASIC ELECTRIC ELEMENTS
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NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220271144
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- DENSO CORPORATION
- Takashi OKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220270882
- Publication date Aug 25, 2022
- DENSO CORPORATION
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20220157606
- Publication date May 19, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220115529
- Publication date Apr 14, 2022
- KABUSHIKI KAISHA TOSHIBA
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20210399091
- Publication date Dec 23, 2021
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20210384294
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE
- Publication number 20210358795
- Publication date Nov 18, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
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TRANSISTOR DEVICES AND METHODS OF FORMING A TRANSISTOR DEVICE
- Publication number 20210335778
- Publication date Oct 28, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jiacheng LEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210234032
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- KABUSHIKI KAISHA TOSHIBA
- Yosuke KAJIWARA
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- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
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Doped Gate Dielectrics Materials
- Publication number 20210151578
- Publication date May 20, 2021
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20210143009
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- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20210135016
- Publication date May 6, 2021
- MEDIATEK INC.
- Cheng-Tien WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20210118984
- Publication date Apr 22, 2021
- KABUSHIKI KAISHA TOSHIBA
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND...
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- H01 - BASIC ELECTRIC ELEMENTS
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- Rohm Co., Ltd.
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WAFER LEVEL SEQUENCING FLOW CELL FABRICATION
- Publication number 20210013025
- Publication date Jan 14, 2021
- MGI TECH CO., LTD.
- Shifeng Li
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- Publication date Dec 31, 2020
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- Josephine Chang
- H01 - BASIC ELECTRIC ELEMENTS
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CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS...
- Publication number 20200395358
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- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS

the insulator being formed after the semiconductor body, the semiconductor being a III-V compound

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Structure and formation method of semiconductor device structure wi...

High electron mobility transistor and method for fabricating the same

Method of fabricating super-junction based vertical gallium nitride...

Wafer level sequencing flow cell fabrication

Semiconductor power device and method for producing same

Semiconductor structure

Method of fabricating super-junction based vertical gallium nitride...

High electron mobility transistor and method for fabricating the same

Nitride semiconductor device and fabrication method therefor

Semiconductor device and method for manufacturing the same

Integrated circuit devices with an engineered substrate

Method of manufacturing a HEMT device with reduced gate leakage cur...

Structure and formation method of semiconductor device structure wi...

Epitaxial structure of N-face group III nitride, active device, and...

Planar transistors with wrap-around gates and wrap-around source an...

Super-junction based vertical gallium nitride JFET power devices

Silicon rich nitride layer between a plurality of semiconductor layers

Doped gate dielectrics materials

Method of making a high power transistor with gate oxide barriers

Semiconductor structure

Wafer level sequencing flow cell fabrication

Transistor devices and methods of forming a transistor device

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device

Enhancement mode III-nitride devices having an Al1-xSixO gate insul...

Semiconductor power device and method for producing same

Gallium nitride based semiconductor device and manufacturing method...

High electron mobility transistors and methods for fabricating the...

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MOSFET with ultra low drain leakage

Patents Applicationslast 30 patents

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SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR ELEMENT WITH SHIELDING

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

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WAFER LEVEL SEQUENCING FLOW CELL FABRICATION

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

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INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

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SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

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EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND...

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ENHANCEMENT MODE SADDLE GATE DEVICE

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