the insulator being formed after the semiconductor body, the semiconductor being a III-V compound

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28264the insulator being formed after the semiconductor body, the semiconductor being a III-V compound

Industries

Patents Grantslast 30 patents

Information Patent Grant
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- Issue date Mar 5, 2024
- Mediatek Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 11,804,544
- Issue date Oct 31, 2023
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
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- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,757,028
- Issue date Sep 12, 2023
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
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- Issue date Aug 22, 2023
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- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a HEMT device with reduced gate leakage cur...
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- Issue date Aug 15, 2023
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
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- Issue date Mar 14, 2023
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar transistors with wrap-around gates and wrap-around source an...
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- Nidhi Nidhi
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Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
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- Issue date Feb 7, 2023
- NEXGEN POWER SYSTEMS, INC.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon rich nitride layer between a plurality of semiconductor layers
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- Issue date Nov 29, 2022
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
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Information Patent Grant
Doped gate dielectrics materials
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- Issue date Sep 6, 2022
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Information Patent Grant
Method of making a high power transistor with gate oxide barriers
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Information Patent Grant
Semiconductor structure
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer level sequencing flow cell fabrication
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- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Transistor devices and methods of forming a transistor device
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- Issue date Jul 5, 2022
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 11,362,174
- Issue date Jun 14, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,355,593
- Issue date Jun 7, 2022
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- Takatomi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
- Issue date May 3, 2022
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- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 11,276,574
- Issue date Mar 15, 2022
- Rohm Co., Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based semiconductor device and manufacturing method...
- Patent number 11,257,676
- Issue date Feb 22, 2022
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- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors and methods for fabricating the...
- Patent number 11,227,943
- Issue date Jan 18, 2022
- The Government of the United States of America, as represented by the Secreta...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high-κ dielectric layer and method for...
- Patent number 11,201,055
- Issue date Dec 14, 2021
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- Chien-Hua Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with ultra low drain leakage
- Patent number 11,201,212
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having multiple threshold voltage channel mat...
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- Issue date Nov 16, 2021
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- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 11,171,242
- Issue date Nov 9, 2021
- Fujitsu Limited
- Kenichi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for equivalent oxide thickness scaling on si...
- Patent number 11,152,214
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 11,152,210
- Issue date Oct 19, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack for heterostructure device
- Patent number 11,114,539
- Issue date Sep 7, 2021
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
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- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS
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NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
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- ROHM CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS
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STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20230378253
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220336680
- Publication date Oct 20, 2022
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
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WAFER LEVEL SEQUENCING FLOW CELL FABRICATION
- Publication number 20220301848
- Publication date Sep 22, 2022
- MGI TECH CO., LTD.
- Shifeng Li
- H01 - BASIC ELECTRIC ELEMENTS
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NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220271144
- Publication date Aug 25, 2022
- DENSO CORPORATION
- Takashi OKAWA
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Information Patent Application
SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220270882
- Publication date Aug 25, 2022
- DENSO CORPORATION
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20220157606
- Publication date May 19, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220115529
- Publication date Apr 14, 2022
- KABUSHIKI KAISHA TOSHIBA
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20210399091
- Publication date Dec 23, 2021
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
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STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20210384294
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE
- Publication number 20210358795
- Publication date Nov 18, 2021
- QROMIS, Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
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TRANSISTOR DEVICES AND METHODS OF FORMING A TRANSISTOR DEVICE
- Publication number 20210335778
- Publication date Oct 28, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jiacheng LEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210234032
- Publication date Jul 29, 2021
- KABUSHIKI KAISHA TOSHIBA
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20210217886
- Publication date Jul 15, 2021
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
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Doped Gate Dielectrics Materials
- Publication number 20210151578
- Publication date May 20, 2021
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20210143009
- Publication date May 13, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20210135016
- Publication date May 6, 2021
- MEDIATEK INC.
- Cheng-Tien WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20210118984
- Publication date Apr 22, 2021
- KABUSHIKI KAISHA TOSHIBA
- Tatsuo SHIMIZU
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Information Patent Application
EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND...
- Publication number 20210083086
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- CHIH-SHU HUANG
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Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20210043456
- Publication date Feb 11, 2021
- Rohm Co., Ltd.
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ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...
- Publication number 20210043750
- Publication date Feb 11, 2021
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Information Patent Application
WAFER LEVEL SEQUENCING FLOW CELL FABRICATION
- Publication number 20210013025
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- MGI TECH CO., LTD.
- Shifeng Li
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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ENHANCEMENT MODE SADDLE GATE DEVICE
- Publication number 20200411676
- Publication date Dec 31, 2020
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Information Patent Application
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Information Patent Application
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- Publication number 20200365407
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Hwei HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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- Fujitsu Limited
- Kenichi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with Multi-Metal Gate
- Publication number 20200321443
- Publication date Oct 8, 2020
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
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Information Patent Application
TRANSISTOR STRUCTURES HAVING MULTIPLE THRESHOLD VOLTAGE CHANNEL MAT...
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Information Patent Application
PLANAR TRANSISTORS WITH WRAP-AROUND GATES AND WRAP-AROUND SOURCE AN...
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- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS

the insulator being formed after the semiconductor body, the semiconductor being a III-V compound

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure

Method of fabricating super-junction based vertical gallium nitride...

High electron mobility transistor and method for fabricating the same

Nitride semiconductor device and fabrication method therefor

Semiconductor device and method for manufacturing the same

Integrated circuit devices with an engineered substrate

Method of manufacturing a HEMT device with reduced gate leakage cur...

Structure and formation method of semiconductor device structure wi...

Epitaxial structure of N-face group III nitride, active device, and...

Planar transistors with wrap-around gates and wrap-around source an...

Super-junction based vertical gallium nitride JFET power devices

Silicon rich nitride layer between a plurality of semiconductor layers

Doped gate dielectrics materials

Method of making a high power transistor with gate oxide barriers

Semiconductor structure

Wafer level sequencing flow cell fabrication

Transistor devices and methods of forming a transistor device

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device

Enhancement mode III-nitride devices having an Al1-xSixO gate insul...

Semiconductor power device and method for producing same

Gallium nitride based semiconductor device and manufacturing method...

High electron mobility transistors and methods for fabricating the...

Semiconductor device having high-κ dielectric layer and method for...

MOSFET with ultra low drain leakage

Transistor structures having multiple threshold voltage channel mat...

Semiconductor device and method for manufacturing semiconductor device

Structures and methods for equivalent oxide thickness scaling on si...

Semiconductor crystal substrate, infrared detector, and method for...

Gate stack for heterostructure device

Patents Applicationslast 30 patents

SEMICONDUCTOR ELEMENT WITH SHIELDING

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

SEMICONDUCTOR STRUCTURE

WAFER LEVEL SEQUENCING FLOW CELL FABRICATION

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE

TRANSISTOR DEVICES AND METHODS OF FORMING A TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

Doped Gate Dielectrics Materials

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

SEMICONDUCTOR STRUCTURE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...

WAFER LEVEL SEQUENCING FLOW CELL FABRICATION

ENHANCEMENT MODE SADDLE GATE DEVICE

CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Transistor with Multi-Metal Gate

TRANSISTOR STRUCTURES HAVING MULTIPLE THRESHOLD VOLTAGE CHANNEL MAT...

PLANAR TRANSISTORS WITH WRAP-AROUND GATES AND WRAP-AROUND SOURCE AN...